MCNA120UI2200TED
14/15
24/25
10/11
6/7
NTC
30 29 45/46
41
3
21/22
38
36
34
48/4940
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC
High Voltage Thyristor Module
Part number
MCNA120UI2200TED
Backside: isolated
Features / Advantages: Applications: Package:
● Thyristor/Standard Rectifier for line frequency
● Planar passivated chips
● Long-term stability
● Low forward voltage drop
● Leads suitable for PC board soldering
● Copper base plate with
Direct Copper Bonded Al2O3-ceramic
● Improved temperature and power cycling
● 3~ Rectifier with brake unit
for drive inverters
E2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Phase Change Material available
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
RRM
2200
I 120
FSM
500
DAV
V=V
A
A
=
=
I
3~
Rectifier
CES
1700
Brake
Chopper
I 113
CE(sat)
2.5
C25
V= V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20180615dData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
MCNA120UI2200TED
V = V
A²s
A²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.33
R0.65 K/W
min.
120
VV
50T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
80
P
tot
190 WT = 25°C
C
40
2200
forward voltage drop
total power dissipation
Unit
2.05
T = 25°C
VJ
125
V
T0
V0.83T = °C
VJ
150
r
T
13.6 mΩ
V1.36T = °C
VJ
I = A
T
V
40
2.38
I = A120
I = A120
threshold voltage
slope resistance for power loss calculation only
µA
125
VV2200T = 25°C
VJ
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
13
junction capacitance
V = V700 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
500
540
905
880
A
A
A
A
425
460
1.25
1.22
2200
300 µs
DAV
d =rectangular ⅓
bridge output current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
120 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.4 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
70 mA
T = °C-40
VJ
1.6 V
150 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
5 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
150 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
100 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
500 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 40 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 40 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Rectifier
2300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20180615dData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
MCNA120UI2200TED
T = 125°C
V
CES
V1700
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
113
A
C
VJ
Symbol
Definition
Ratings
typ.
max.
min.
Unit
80
V
V
CE(sat)
total power dissipation
445 W
collector emitter leakage current
6.4 V
turn-on delay time
270 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
150
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
C GE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
C GE CE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2.93
3
5.85.2
mA
5 mA
0.6
400
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
850 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
100 ns
700 ns
430 ns
34 mJ
17.5 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1700
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
280 A
R
thJC
thermal resistance junction to case
K/W
V
RRM
V1700
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
75
A
C
50
T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2.45
V
VJ
2.20T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
0.1
mA
VJ
1T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
20 µC
46 A
1300 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
E
rec
10.5 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case
0.65 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
75
3
75
75
60
60
18
18
18
900
720
600
900
I
CM
2.5
R
thCH
thermal resistance case to heatsink
0.28
K/W
R
thCH
thermal resistance case to heatsink
K/W
Brake IGBT + Diode
Brake Diode
900 V
80
80
80
80
nA
V = V
CEK
1700
0.10
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20180615dData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
MCNA120UI2200TED
Ratings
XXXXXXXXXX yywwx
Logo UL Part number Date Code
2D Data Matrix
Location
C
N
M
A
120
UI
2200
T
ED
Part description
Thyristor (SCR)
High Voltage Thyristor
(>= 2000V)
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit
Thermistor \ Temperature sensor
E2-Pack
Module
=
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm6
mounting torque
3
T
VJ
°C150
virtual junction temperature
-40
Weight g176
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
40 A
per terminal
125-40
terminal to terminal
E2-Pack
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
0 25 50 75 100 125 150
102
103
104
10
5
R
[
]
Typ. NTC resistance vs. temperature
TC[°C]
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCNA120UI2200TED 510374Box 36MCNA120UI2200TEDStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.83
mΩ
V
0 max
R
0 max
slope resistance *
10.5
1.17
25
1.34
15.2
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor Brake
IGBT +
Brake
Diode
150 °C
* on die level
T = 25°
resistance
kΩ
5.25
K
VJ
3375
R
25
B
25/50
54.75
temperature coefficient
Symbol
Definition
typ.
max.
min.
Unit
Temperature Sensor NTC
IXYS reserves the right to change limits, conditions and dimensions. 20180615dData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
MCNA120UI2200TED
107,5
±0,3
93
±0,2
79,2
45
±0,2
32
±0,2
11
0
44 3543 42 41 40 39 38 37 36 2634 33 32 31 30 29 28 27
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
61,74
65,55
31,26
19,83
50.31
20,6
±0,5
17
±0,5
3,5
±0,5
35,07
46,50
Vor der Montage typ. 100 µm konvex über 75 mm
Before mounting typ. 100 µm convex over 75 mm
65,55
27,45
50,31
42,69
23,64
35,07
69,36
A
D
0,8
±0,05
15° ±1°
Detail D
C
0,8
±0,2
1,2
±0,05
Detail C
15.24
11.43
7.62
11.43
25
24
23
22
21
20
11,43
7,62
11,43
0
45
46
47
50
49
48
Ø 5,5
+0,1 - 0,3
41,90
Index
Bemerkung /
Note:
-
Nichttolerierte Maße nach /
Measure without tolerances according DIN ISO 2768-T1-m
- PCB-Lochmuster / PCB hole pattern: see pin position
- Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: 0.1
- Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024
Detail A:PCB-Montage /
Mounting on PCB
- Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT® (Größe / size: K25
)
- Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe /
hole depth)
- Empfohlenes Drehmoment / Recommended mounting torque:1.5 Nm
6
Detail
A
Ø 6 Ø 2,5
-0,3
Ø 2,1
-0,3
1,5 +0,3
15.24
14/15
24/25
10/11
6/7
NTC
30 29 45/46
41
3
21/22
38
36
34
48/4940
Outlines E2-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20180615dData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
MCNA120UI2200TED
0 40 80 120 160
0
20
40
60
80
100
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
0.01 0.1 1
100
200
300
400
5
0
0
0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
100
1
20
1 10 100 1000 10000
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
I
T
[A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
10
2
10
3
10
4
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
V
R
= 0 V
I
TAVM
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at
case temperature
Fig. 8 Transient thermal impedance junction to case
t
gd
[µs]
I
G
[A]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 20 40
0
20
40
60
80
100
I
T(AV)
[A]
P
tot
[
W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 40 80 120 160
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
1 10 100 1000 10000
0.1
1
10
V
G
[V]
I
G
[mA]
T
VJ
= 140°C
T
VJ
= 140°C
1: I
GD
, T
VJ
= 140°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
T
VJ
= 25°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
R
thHA
0.2
0.4
0.6
0.8
1.0
2.0
1
234
56
T
VJ
= 125°C
150°C
i R
thi
(K/W) t
i
(s)
1 0.0100 0.0004
2 0.0500 0.0090
3 0.1400 0.0140
4 0.3000 0.0500
5 0.1500 0.3600
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20180615dData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
MCNA120UI2200TED
1 10 100 1000 10000
0.1
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
120
6 7 8 9 10 11 12 13
0
20
40
60
80
100
120
140
I
C
[A]
t
[ns]
V
F
[V]
t [ms]
Z
thJC
[K/W]
Fig.2 Typ. output characteristics
IGBT
Fig. 3 Typ. transfer charact.
IGBT
Fig. 6 Typ. forward characteristics
Diode
Fig. 9 Transient thermal
resistance junction to case
0 1 2 3
0
20
40
60
80
100
120
140
I
C
[A]
V
CE
[V]
Fig.1 Output characteristics IGBT
0 1 2 3 4
0
20
40
60
80
100
120
140
I
C
[A]
V
CE
[V] V
GE
[V]
10 20 30 40 50
0
2
4
6
8
10
12
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140
0
20
40
60
80
100
0
4
8
12
16
20
I
F
[A]
I
rr
E
rec
E
rec
[mJ]
R
G
[Ohm]
Fig. 7 Typ. reverse recovery
c
h
a
r
a
c
t
e
r
i
s
t
i
c
s
D
i
o
d
e
Fig. 8 Typ. reverse recovery
characteristics Diode
0 40 80 120 160
0
10
20
30
40
0
200
400
600
800
E
off
[mJ]
I
C
[A]
Fig. 5 Typ. turn-off energy & switch.
times vs. collector current
0 40 80 120 160
0
100
200
300
400
0
20
40
60
80
E
on
[
mJ]
I
C
[A]
t
d(on)
E
on
Fig. 4 Typ. turn-on energy & switch.
times vs. collector current
t
r
t
r
[ns]
E
rec
[
mJ]
I
rr
[A]
I
rr
[A]
25°C
125°C
9 V
11 V
13 V
25°C
125°C
E
off
t
f
t
d(off)
I
F
[A]
25°C
125°C
E
rec
I
rr
V
CE
= 20 V
V
GE
= 19 V
17 V
15 V
T
VJ
= 125°C
R
G
= 18 Ohm
V
CE
= 900 V
V
GE
= ±15 V
T
VJ
= 125°C
R
G
= 18 Ohm
V
CE
= 900 V
V
GE
= ±15 V
T
VJ
= 125°C
R
G
=18 Ohm
V
R
= 900 V
T
VJ
= 125°C
T
VJ
= 125°C
V
R
= 900 V
I
F
= 60 A
Diode
IGBT
IGBT
R
i
t
i
0.010 0.001
0.030 0.008
0.120 0.045
0.070 0.100
Diode
R
i
t
i
0.010 0.001
0.050 0.001
0.240 0.021
0.350 0.090
Brake IGBT + Diode
IXYS reserves the right to change limits, conditions and dimensions. 20180615dData according to IEC 60747and per semiconductor unless otherwise specified
© 2018 IXYS all rights reserved
Mouser Electronics
Authorized Distributor
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MCNA120UI2200TED