1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Average forward current: IF(AV) 1 A
Reverse voltage: VR 40 V
Low forward voltage
High power capability due to
clip-bonding technology
Small and flat lead SMD plastic
package
AEC-Q101 qualified
High temperature Tj 175 °C
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conve rs i on
Switch mode power supply
Reverse polarity protection
Low power consumption applications
High temperature applications
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
Rev. 1 — 5 October 2011 Product data sheet
SOD128
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward
current square wave; δ= 0.5; f = 20 kHz;
Tamb 145 °C [1] --1A
square wave; δ= 0.5; f = 20 kHz;
Tsp 165 °C --1A
VRreverse voltage Tj=25°C --40V
VFforward voltage IF=1A; T
j= 25 °C - 430 490 mV
IRreverse current VR=40V; T
j= 25 °C - 10 50 µA
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 2 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphi c sy mbol
1 K cathode[1]
SOD128
2 A anode
12
sym001
12
Table 3. Ordering information
Type number Package
Name Description Version
PMEG4010ETP - plastic surface-mounted package; 2 leads SOD128
Table 4. Marking codes
Type number Marking code
PMEG4010ETP C1
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 3 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
5. Limiting values
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a
significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage Tj=2C - 40 V
IF(AV) average forward cur rent square w ave; δ= 0.5; f = 20 kHz;
Tamb 145 °C [1] -1A
square wave; δ= 0.5; f = 20 kHz;
Tsp 165 °C -1A
IFSM non-repetitive peak forward
current square wave; tp=8ms; T
j(init) =2C - 50 A
Ptot total power dissipation Tamb 25 °C [2][3] - 750 mW
[4][3] - 1250 mW
[1][3] - 2500 mW
Tjjunction temperature - 175 °C
Tamb ambient temperature -55 175 °C
Tstg storage temperature -65 175 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1][2][3] - - 200 K/W
[1][4][3] - - 120 K/W
[1][5][3] --60K/W
Rth(j-sp) thermal resistance
from junction to solder
point
[6] --12K/W
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 4 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab374
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
1
t
p
(s)
10
3
10
2
10
3
10110
2
10
1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02 0.01
0
006aab375
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
1
t
p
(s)
10
3
10
2
10
3
10110
2
10
1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02 0.01
0
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 5 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
7. Characteristics
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab376
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
1
t
p
(s)
10
3
10
2
10
3
10110
2
10
1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02 0.01
0
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage IF= 0.1 A; Tj= 25 °C - 310 360 mV
IF=1A; T
j= 25 °C - 430 490 mV
IF=1A; T
j= 125 °C - 330 380 mV
IRreverse current VR=10V; T
j=25°C - 3 13 µA
VR=40V; T
j= 25 °C - 10 50 µA
VR=10V; T
j=125°C -2-mA
VR=40V; T
j=125°C -6-mA
Cddiode capacitance VR= 1 V; f = 1 MHz; Tj= 25 °C - 130 - pF
VR=10V; f=1MHz; T
j=2C - 50 - pF
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 6 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = 40 °C
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = 40 °C
Fig 4. Forward current as a function of forward
voltage; typical values Fig 5. Reverse current as a fu nction of reverse
voltage; typical values
f = 1 MHz; Tamb = 25 °C Tj = 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1.0
Fig 6. Diod e capacitance as a function of reverse
voltage; typical values Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
006aac717
10–2
10–3
1
10–1
10
IF
(A)
10–4
VF (V)
0.0 1.00.80.4 0.60.2
(1)
(2)
(3)
(4) (6)(5)
006aac718
10–7
10–5
10–3
10–1
10–8
10–6
10–4
10–2
IR
(A)
10–9
VR (V)
0403010 20
(1)
(2)
(3)
(4)
(5)
VR (V)
0403010 20
006aab379
100
150
50
200
250
Cd
(pF)
0
006aac719
IF(AV) (A)
0.0 1.51.00.5
0.2
0.3
0.1
0.4
0.5
PF(AV)
(W)
0.0
(1)
(2)
(3) (4)
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 7 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
Tj = 150 °C
(1) δ = 1.0
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1.0 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values Fig 9. Average forward current as a fun ction of
ambient temperature; typical values
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 175 °C
(1) δ = 1.0
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Ceramic PCB, Al2O3, standard footprint
Tj = 175 °C
(1) δ = 1.0 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 10. Average forward current as a function of
ambient temperature; typical values Fig 11. Average forward current as a function of
ambient temperature; typical values
VR (V)
0403010 20
006aac720
0.50
0.75
0.25
1.00
1.25
PR(AV)
(W)
0.00
(1)
(2)
(3)
(4)
Tamb (°C)
0 20015050 100
006aac721
0.8
0.4
1.2
1.6
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tamb (°C)
0 20015050 100
006aac722
0.8
0.4
1.2
1.6
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tamb (°C)
0 20015050 100
006aac723
0.8
0.4
1.2
1.6
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 8 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
Tj = 175 °C
(1) δ = 1.0
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 12. Average forward current as a function of solder point temperature; typical values
Tsp (°C)
0 20015050 100
006aac724
0.8
0.4
1.2
1.6
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 9 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
8. Test information
The current ratings for the typical waveform s as show n in figu r es 9, 10, 11 and 12 are
calculated acco rd in g to the eq u atio n s: I F(AV) = IM × δ with IM defined as peak current,
IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualif ication for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Fig 13. Duty cycle definition
tp
tcy
P
t
006aac658
duty cycle δ =
tp
tcy
Fig 14. Package outline SOD128
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 10 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
10. Packing information
[1] For further information and the availability of packing methods, see 14Contact information.
11. Soldering
Table 8. Ordering information
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package Description Packing quantity
3000
PMEG4010ETP SOD128 4 mm pitch, 12 mm tape and reel -115
Reflow soldering is the onl y recommended soldering method.
Fig 15. Reflow soldering footprint for SOD128
solder lands
solder resist
occupied area
solder paste
2.53.4 2.1
(2×)
1.9
(2×)
4.4
4.2
6.2
1.2
(2×)
1.4
(2×)sod128_fr
Dimensions in mm
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 11 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMEG4010ETP v.1 20111005 Product data sheet - -
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 12 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The p r oduct status of device(s) described in this do cument may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modificati ons or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of informati on included herein and shall have
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Draft — The document is a draft version only. The content is still under
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Short data sheet — A short data sheet is an extract from a full da ta sheet
with the same product type number(s) and tit le. A short data sh eet is intended
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full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Char acteristics sections of this
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Customers are responsible for the design and ope ration of their applications
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
PMEG4010ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 5 October 2011 13 of 14
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
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ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
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Corporation.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 October 2011
Document identifier: PMEG4010ETP
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . .9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
10 Packing information . . . . . . . . . . . . . . . . . . . . .10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
14 Contact information. . . . . . . . . . . . . . . . . . . . . .13
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