1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two
signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes
in SOT23
Rev. 02 — 25 August 2009 Product data sheet
nESD protection of two lines nUltra low leakage current: IRM <90nA
nMax. peak pulse power: PPP = 350 W nESD protection up to 23 kV
nLow clamping voltage: VCL =26V nIEC 61000-4-2, level 4 (ESD)
nSmall SMD plastic package nIEC 61000-4-5 (surge); IPP =15A
nComputers and peripherals nCommunication systems
nAudio and video equipment nPortable electronics
nCellular handsets and accessories nSubscriber Identity Module (SIM) card
protection
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage
PESD3V3L2BT - - 3.3 V
PESD5V0L2BT - - 5.0 V
PESD12VL2BT - - 12 V
PESD15VL2BT - - 15 V
PESD24VL2BT - - 24 V
Cddiode capacitance VR=0V;
f=1MHz
PESD3V3L2BT - 101 - pF
PESD5V0L2BT - 75 - pF
PESD12VL2BT - 19 - pF
PESD15VL2BT - 16 - pF
PESD24VL2BT - 11 - pF
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 2 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 cathode 2
3 double cathode
12
3
2
1
006aaa155
3
Table 3. Ordering information
Type number Package
Name Description Version
PESD3V3L2BT - plastic surface mounted package; 3 leads SOT23
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
Table 4. Marking codes
Type number Marking code[1]
PESD3V3L2BT V3*
PESD5V0L2BT V4*
PESD12VL2BT V5*
PESD15VL2BT V6*
PESD24VL2BT V7*
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 3 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PPP peak pulse power tp= 8/20 µs[1][2]
PESD3V3L2BT - 350 W
PESD5V0L2BT - 350 W
PESD12VL2BT - 200 W
PESD15VL2BT - 200 W
PESD24VL2BT - 200 W
IPP peak pulse current tp= 8/20 µs[1][2]
PESD3V3L2BT - 15 A
PESD5V0L2BT - 13 A
PESD12VL2BT - 5 A
PESD15VL2BT - 5 A
PESD24VL2BT - 3 A
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
VESD electrostatic discharge
voltage IEC 61000-4-2
(contact discharge) [1][2]
PESD3V3L2BT - 30 kV
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT - 23 kV
PESDxL2BT series HBM MIL-STD883 - 10 kV
Table 7. ESD standards compliance
ESD Standard Conditions
IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 4 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 5 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
6. Characteristics
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage
PESD3V3L2BT - - 3.3 V
PESD5V0L2BT - - 5.0 V
PESD12VL2BT - - 12 V
PESD15VL2BT - - 15 V
PESD24VL2BT - - 24 V
IRM reverse leakage current
PESD3V3L2BT VRWM = 3.3 V - 0.09 2 µA
PESD5V0L2BT VRWM = 5.0 V - 0.01 1 µA
PESD12VL2BT VRWM =12V - <1 50 nA
PESD15VL2BT VRWM =15V - <1 50 nA
PESD24VL2BT VRWM =24V - <1 50 nA
VBR breakdown voltage IR=5mA
PESD3V3L2BT 5.8 6.4 6.9 V
PESD5V0L2BT 7.0 7.6 8.2 V
PESD12VL2BT 14.2 15.8 16.7 V
PESD15VL2BT 17.1 18.8 20.3 V
PESD24VL2BT 25.4 27.8 30.3 V
Cddiode capacitance VR=0V;
f=1MHz
PESD3V3L2BT - 101 - pF
PESD5V0L2BT - 75 - pF
PESD12VL2BT - 19 - pF
PESD15VL2BT - 16 - pF
PESD24VL2BT - 11 - pF
VCL clamping voltage [1][2]
PESD3V3L2BT IPP =1A - - 8 V
IPP =15A - - 26 V
PESD5V0L2BT IPP =1A - - 10 V
IPP =13A - - 28 V
PESD12VL2BT IPP =1A - - 20 V
IPP =5A - - 37 V
PESD15VL2BT IPP =1A - - 25 V
IPP =5A - - 44 V
PESD24VL2BT IPP =1A - - 40 V
IPP =3A - - 70 V
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 6 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
rdif differential resistance IR=1mA
PESD3V3L2BT - - 400 Ω
PESD5V0L2BT - - 80 Ω
PESD12VL2BT - - 200 Ω
PESD15VL2BT - - 225 Ω
PESD24VL2BT - - 300 Ω
Table 8. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 7 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
Tamb =25°C
(1) PESD3V3L2BT and PESD5V0L2BT
(2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT
Fig 3. Peak pulse power as a function of exponential
pulse duration tp; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
Tamb =25°C; f = 1 MHz
(1) PESD3V3L2BT
(2) PESD5V0L2BT
Tamb =25°C; f = 1 MHz
(1) PESD12VL2BT
(2) PESD15VL2BT
(3) PESD24VL2BT
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Diode capacitance as a function of reverse
voltage; typical values
006aaa531
103
102
104
PPP
(W)
10
tp (µs)
110
4
103
10 102
(1)
(2)
Tj (°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
VR (V)
054231
006aaa067
70
90
100
110
Cd
(pF)
50
60
80
(1)
(2)
VR (V)
0252010 155
006aaa068
8
12
4
16
20
Cd
(pF)
0
(1)
(2)
(3)
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 8 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
(1) PESD3V3L2BT, PESD5V0L2BT
PESD12VL2BT, PESD15VL2BT and PESD24VL2BT:
IRM < 20 nA; Tj= 150 °C
Fig 7. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
Fig 8. V-I characteristics for a bidirectional ESD
protection diode
006aaa069
1
10
10−1
Tj (°C)
−100 150100050−50
IRM
IRM(25°C)
(1)
006aaa676
−VCL −VBR −VRWM VCL
VBR
VRWM
−IRM
IRM
−IR
IR
−IPP
IPP
−+
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 9 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
Fig 9. ESD clamping test setup and waveforms
006aaa162
50 Ω
RZ
CZ
D.U.T.
(Device
Under
Test)
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div; horizontal scale = 50 ns/div
vertical scale = 20 V/div; horizontal scale = 50 ns/div
GND
GND
450 ΩRG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 10 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
7. Application information
The PESDxL2BT series is designed for the protection of two bidirectional signal lines from
the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on
lines where the signal polarities are above and below ground. The PESDxL2BT series
provides a surge capability of up to 350 W per line for an 8/20 µs waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxL2BT as close to the input terminal or connector as possible.
2. The path length between the PESDxL2BT and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
Fig 10. Application diagram
006aaa163
GND
PESDxL2BT
line 2 to be protected
line 1 to be protected
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 11 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
Fig 11. Package outline SOT23 (TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PESD3V3L2BT SOT23 4 mm pitch, 8 mm tape and reel -215 -235
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 12 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESDXL2BT_SER_2 20090825 Product data sheet - PESDXL2BT_SER_1
Modifications: •This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•Table 2 “Pinning”: amended
PESDXL2BT_SER_1 20051101 Product data sheet - -
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 13 of 14
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 August 2009
Document identifier: PESDXL2BT_SER_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . 10
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information. . . . . . . . . . . . . . . . . . . . . 11
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12 Contact information. . . . . . . . . . . . . . . . . . . . . 13
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
