AUIRFP2907Z
08/13/2010
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AUTOMOTIVE GRADE
PD - 97550
Features
●Advanced Process Technology
●Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Lead-Free, RoHS Compliant
●Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
HEXFET® Power MOSFET
TO-247AC
S
D
G
D
GDS
Gate Drain Source
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
c
PD @TC = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
EAS Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value
i
IAR Avalanche Current
c
A
EAR Repetitive Avalanche Energy
h
mJ
TJ Operating Junction and °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case
j
––– 0.49 °C/W
RθCS Case-to-Sink, Flat, Greased Surface 0.24 –––
RθJA Junction-to-Ambient ––– 40
10 lbf•in (1.1N•m)
310
2.0
± 20
520
690
See Fig.12a,12b,15,16
300
-55 to + 175
Max.
170
120
680
V
(BR)DSS
75V
R
DS(on)
max. 4.5mΩ
I
D
170A
S
D
G
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Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V.
Part not recommended for use above this value.
ISD ≤ 90A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L=0.13mH, RG = 25Ω, IAS = 90A, VGS =10V.
Rθ is measured at TJ of approximately 90°C.
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V(BR)DSS Drain-to-Source Breakdown Volta
g
e75––––––V
∆ΒVDSS
/
∆TJ Breakdown Volta
g
e Temp. Coefficient ––– 0.069 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.5 mΩ
VGS(th) Gate Threshold Volta
g
e 2.0 ––– 4.0 V
g
fs Forward Transconductance 180 ––– ––– S
IDSS Drain-to-Source Leaka
g
e Current ––– ––– 20
µ
A
––– ––– 250
IGSS Gate-to-Source Forward Leaka
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
QgTotal Gate Char
g
e ––– 180 270
Qgs Gate-to-Source Char
g
e ––– 46 ––– nC
Qgd Gate-to-Drain ("Miller") Char
g
e ––– 65 –––
td(on) Turn-On Dela
y
Time –––19–––ns
trRise Time ––– 140 –––
td(off) Turn-Off Dela
y
Time –––97–––
tfFall Time ––– 100 –––
LDInternal Drain Inductance ––– 5.0 ––– nH Between lead,
6mm (0.25in.)
LSInternal Source Inductance ––– 13 ––– from packa
g
e
and center of die contact
Ciss Input Capacitance ––– 7500 ––– pF
Coss Output Capacitance ––– 970 –––
Crss Reverse Transfer Capacitance ––– 510 –––
Coss Output Capacitance ––– 3640 –––
Coss Output Capacitance ––– 650 –––
Coss eff. Effective Output Capacitance ––– 1020 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
ISContinuous Source Current ––– ––– 90
(Body Diode) A
ISM Pulsed Source Current ––– ––– 680
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 41 61 ns
Qrr Reverse Recover
y
Char
g
e ––– 59 89 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = VGS, ID = 250µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
Conditions
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 90A
f
TJ = 25°C, IF = 90A, VDD = 38V
di/dt = 100A/
µ
s
f
TJ = 25°C, IS = 90A, VGS = 0V
f
showing the
integral reverse
p-n junction diode.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
f
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 60V
ƒ = 1.0MHz, See Fig. 5
RG = 2.5Ω
ID = 90A
VDS = 25V, ID = 90A
VDD = 38V
ID = 90A
VGS = 20V
VGS = -20V
VDS = 60V
VGS = 10V
f
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information†
TO-247 MSL1
RoHS Compliant Yes
ESD
Machine Model Class M4 (425V)
AEC-Q101-002
Human Body Model Class H2 (4000V)
AEC-Q101-001
Charged Device
Model
Class C5 (1125V)
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
≤60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60µs PULSE WIDTH
0 25 50 75 100 125 150
ID,Drain-to-Source Current (A)
0
50
100
150
200
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 50 100 150 200
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 60V
VDS= 38V
VDS= 15V
ID= 90A
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
nce
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 90A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.1224 0.000360
0.1238 0.001463
0.2433 0.021388
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
25
50
75
100
125
150
175
ID, Drain Current (A)
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QG
QGS QGD
VG
Charge
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
1K
VCC
DUT
0
L
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
500
1000
1500
2000
2500
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 16A
25A
BOTTOM 90A
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
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Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 90A
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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TO-247AC package is not recommended for Surface Mount Application.
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUFP2907Z
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Part Number
IR Logo
Lot Code
TO-247AC Part Marking Information
AUIRFP2907Z
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Ordering Information
Base
p
art Packa
g
e T
yp
e Standard Pac
k
Com
p
lete Part Number
Form Quantit
y
AUIRFP2907Z TO-247 Tube 25 AUIRFP2907Z
AUIRFP2907Z
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other changes to its products and services at any time and to discontinue any product or services without
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