IXFH 10N100 IXFH 12N100 VDSS HiPerFETTM Power MOSFETs IXFM 10N100 IXFM 12N100 ID25 IXFH/FM 10N100 1000 V 10 A IXFH/FM 12N100 1000 V 12 A RDS(on) trr 1.20 1.05 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings V DSS TJ = 25C to 150C 1000 V V DGR TJ = 25C to 150C; RGS = 1 M 1000 V V GS Continuous 20 V V GSM Transient 30 V I D25 TC = 25C 10N100 12N100 10 12 A A I DM TC = 25C, pulse width limited by TJM 10N100 12N100 40 48 A A I AR TC = 25C 10N100 12N100 10 12 A A E AR TC = 25C 30 mJ dv/dt IS IDM, di/dt 100 A/s, VDD VDSS , TJ 150C, RG = 2 5 V/ns PD TC = 25C 300 W -55 ... +150 C T JM 150 C Tstg -55 ... +150 C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA 1000 VGS(th) VDS = VGS, ID = 4 mA 2.0 I GSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. TJ = 25C TJ = 125C VGS = 10 V, ID = 0.5 ID25 10N100 12N100 Pulse test, t 300 s, duty cycle 2 % IXYS Corporation. rightslimits, reserved. I(c)1995 XYS reserves the right to All change test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 C 300 V 4.5 V 100 nA 250 1 A mA 1.20 1.05 TO-204 AA (IXFM) D G = Gate S = Source G D = Drain TAB = Drain Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * Space savings * High power density 91531D (10/95) IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXFH 10N100 IXFH 12N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. gfs V DS = 10 V; ID = 0.5 ID25, pulse test 6 Ciss S 4000 pF 310 pF Crss 70 pF td(on) 21 50 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 10 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 50 ns td(off) RG = 2 (External), 62 100 ns 32 50 ns 122 155 nC 30 45 nC 50 80 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.42 0.25 RthCK Source-Drain Diode K/W Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Test Conditions IS VGS = 0 10N100 12N100 10 12 A A I SM Repetitive; pulse width limited by TJM 10N100 12N100 40 48 A A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2 % 1.5 V 250 400 ns ns Q RM TJ = 25C TJ = 125C IF = IS -di/dt = 100 A/s, VR = 100 V I RM TO-247 AD (IXFH) Outline K/W Symbol trr IXFM 10N100 IXFM 12N100 TJ = 25C TJ = 125C 1 2 C C TJ = 25C TJ = 125C 10 15 A A TO-204 AA (IXFM) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629