IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 10N100 IXFM 10N100
IXFH 12N100 IXFM 12N100
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150 °C 1000 V
VDGR TJ= 25°C to 150 °C; RGS = 1 MΩ1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 10N100 10 A
12N100 12 A
IDM TC= 25°C, pulse width limited by TJM 10N100 40 A
12N100 48 A
IAR TC= 25°C 10N100 10 A
12N100 12 A
EAR TC= 25°C30mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDSS VGS = 0 V, ID = 3 mA 1000 V
VGS(th) VDS = VGS, ID = 4 mA 2. 0 4. 5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 VDSS TJ =25°C 250 µA
VGS = 0 V TJ = 125°C1mA
R
DS(on) VGS = 10 V, ID = 0.5 ID25 10N100 1.20 Ω
12N100 1.05 Ω
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate D = Drain
S = Source TAB = Drain
DG
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS ID25 RDS(on) trr
IXFH/FM 10N100 1000 V 10 A 1.20 Ω250 ns
IXFH/FM 12N100 1000 V 12 A 1.05 Ω250 ns
Features
•International standard packages
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
- easy to drive and to protect
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Synchronous rectification
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•AC motor control
•Temperature and lighting controls
•Low voltage relays
Advantages
•Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
•Space savings
•High power density
91531D (10/95)
©1995 IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 10N100 IXFM 10N100
IXFH 12N100 IXFM 12N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 6 10 S
Ciss 4000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 310 pF
Crss 70 pF
td(on) 21 50 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 50 ns
td(off) RG = 2 Ω (External), 62 100 ns
tf32 50 ns
Qg(on) 122 155 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 45 nC
Qgd 50 80 nC
RthJC 0.42 K/W
RthCK 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 10N100 10 A
12N100 12 A
ISM Repetitive; 10N100 40 A
pulse width limited by TJM 12N100 48 A
VSD IF = IS, VGS = 0 V, 1 . 5 V
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %
trr TJ =25°C 250 ns
TJ = 125°C 400 ns
QRM TJ =25°C1µC
T
J
= 125°C2µC
I
RM TJ =25°C10A
T
J
= 125°C15A
TO-247 AD (IXFH) Outline
IF = IS
-di/dt = 100 A/µs,
VR = 100 V
TO-204 AA (IXFM) Outline
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 10N100 IXFM 10N100
IXFH 12N100 IXFM 12N100
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 10N100 IXFM 10N100
IXFH 12N100 IXFM 12N100
