
SS2PH9, SS2PH10
www.vishay.com Vishay General Semiconductor
Revision: 13-Aug-2018 1Document Number: 84682
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High Voltage Surface Mount Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
DESIGN SUPPORT TOOLS
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection applications.
MECHANICAL DATA
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 2.0 A
VRRM 90 V, 100 V
IFSM 50 A
EAS 11.25 mJ
VF at IF = 1.0 A 0.62 V
IR max. 1.0 μA
TJ max. 175 °C
Package SMP (DO-220AA)
Circuit configuration Single
SMP (DO-220AA)
eSMP
®
Series
Cathode Anode
click logo to get started
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SS2PH9 SS2PH10 UNIT
Device marking code 29 210
Maximum repetitive peak reverse voltage VRRM 90 100 V
Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 50 A
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -55 to +175 °C