APT8065BVFR 13A 0.650 800V POWER MOS V (R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Fast Recovery Body Diode TO-247 * 100% Avalanche Tested D FREDFET * Lower Leakage * Popular TO-247 Package G * Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT8065BVFR UNIT 800 Volts Drain-Source Voltage 13 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 280 Watts Linear Derating Factor 2.24 W/C VGSM PD TJ,TSTG 52 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 13 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 mJ 4 1210 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 800 Volts 13 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.65 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-5594 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT8065BVFR Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 3050 3700 Coss Output Capacitance VDS = 25V 300 420 Crss Reverse Transfer Capacitance f = 1 MHz 150 225 VGS = 10V 150 225 VDD = 0.5 VDSS ID = ID [Cont.] @ 25C 17 70 25 105 VGS = 15V 12 24 VDD = 0.5 VDSS 11 22 ID = ID [Cont.] @ 25C 60 90 RG = 1.6 12 24 TYP MAX Qg 3 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 13 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ dt Peak Diode Recovery dv/dt 52 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 200 Tj = 125C 350 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 0.7 Tj = 125C 1.8 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 11 Tj = 125C 17 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.45 RJC Junction to Case RJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 40 VR = 200V. D=0.5 0.2 0.1 0.05 0.01 0.005 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5594 Rev B 0.5 0.05 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 14.32mH, R = 25, Peak I = 13A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT8065BVFR 16 16 VGS=6V, 7V, 10V & 15V 12 4.5V 8 4 4V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) VGS=5V, 5.5V, 6V, 7V, 10V & 15V VGS=5V & 5.5V 12 4.5V 8 4 4V 0 0 TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 24 18 12 TJ = +125C 6 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 14 12 10 8 6 4 2 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.2 1.1 VGS=10V VGS=20V 1.0 0.9 0 5 10 15 20 25 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 1.2 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 1.3 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5594 Rev B ID, DRAIN CURRENT (AMPERES) 30 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS APT8065BVFR 15,000 10S 10,000 100S OPERATION HERE LIMITED BY RDS (ON) C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 60 10 1mS 5 10mS 1 100mS TC =+25C TJ =+150C SINGLE PULSE .5 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE D VDS=100V VDS=250V VDS=400V 12 8 4 0 Coss 500 100 I = I [Cont.] 16 1,000 Crss 1 5 10 50 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D Ciss DC .1 20 5,000 0 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 50 10 TJ =+150C TJ =+25C 5 1 .5 .1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-5594 Rev B 2.21 (.087) 2.59 (.102) Gate Drain Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058