©2000 Fairchild Semiconductor International Rev. A, February 2000
BD534/536/538
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD534
: BD536
: BD538
- 45
- 60
- 80
V
V
V
VCEO Collector-E mitter Voltage : BD534
: BD536
: BD538
- 45
- 60
- 80
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 8 A
IB Base Current - 1 A
PC Collector Dissipation (TC=25°C) 50 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current : BD534
: BD536
: BD538
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
- 100
- 100
- 100
µA
µA
µA
ICES Collector Cut-off Current : BD534
: BD536
: BD538
VCE = - 45V, VBE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
- 100
- 100
- 100
µA
µA
µA
IEBO Emitte r C u t-o ff C u rr e nt VEB = - 5V, IC = 0 - 1 mA
hFE * DC Current Gain : ALL DEVICE
: BD534/536
: BD53 8
: BD534/536
: BD53 8
VCE = -2 V, IC = - 500mA
VCE = - 5V, IC = - 10mA
VCE = - 2V, IC = - 2A
40
20
15
25
15
hFE
hFE Groups
J : ALL DEVICE
K : ALL DEVICE
VCE = - 2V, IC = - 2A
VCE = - 2V, IC = - 3A
VCE = -2V, IC = - 2A
VCE = - 2V, IC = - 3A
30
15
40
20
75
100
VCE(sat) * Collector-Emitter Saturation Volt age IC = - 2A, IB = - 0.2A
IC = - 6A, IB = - 0.6A - 0.8 - 0.8 V
V
VBE(on) * Base-Emitter ON V oltage VCE = - 2V, IC = - 2A - 1.5 V
fT Current Gain Bandwidth Produ ct VCE = - 1V, IC = - 500mA 3 12 MHz
BD534/536/538
Medium Power Linear and Switching
Applications
Low Saturation Voltage
Complement to BD533, BD535 and BD537 respectively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
BD534/536/538
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-0.01 -0.1 -1 -10
10
100
1000
VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.01
-0.1
-1
VBE(sat)
VCE(sat)
IC = 10 IB
VBE(sat)[V] , VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.1
-1
-10
-100
100µs
BD538
BD536
BD534
10µs
1ms
10ms
DC
IC(max)
IC[A], COLLECTOR CURRENT
VCE[V], COL L EC TOR-EMITT ER V OL TAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD534/536/538
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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