Oct. 2011
4
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
Note.1: Case temperature (TC), heat sink temperature (Ts) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCEsat and VEC)
7:
NTC THERMISTOR PART
Limits Unit
Min. Typ. Max.
R25
ΔR/R
B
(25/50)
P
25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
5.00
—
3375
—
5.15
+7.8
—
10
4.85
–7.3
—
—
kΩ
%
K
mW
(Note. 7)
Symbol Parameter Conditions
Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)
MODULE
R
th(c-s)
Contact thermal resistance
(Case to heat sink)
Thermal grease applied
per 1 module 0.015 —
—K/W
(Note. 2)
(Note. 1)
Limits Unit
Min. Typ. Max.
Symbol Parameter Conditions
53
54
55
56
57
58
59
60
61
12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
30
29
28
27
26
25
24
23
(121.7)
(110)
(50)
(62)
0
0
LABEL SIDE
29.7
27.4
28.4
42.0
0
38.8
47.9
63.9
70.4
75.9
85.8
91.3
0
18.6
26.7 (Tr/UP, Tr/VP, Tr/WP)
34.9 (Di/UP, Di/VP, Di/WP)
35.6 (Tr/UN, Tr/VN, Tr/WN)
27.4 (Di/Br)
27.9 (Th)
43.3
97.6
101.2
102.8
26.7
35.8
44.9
62.7
72.1
78.1
83.1
86.5
93.5
99.4
C
RR
NC
SR
N
C
TR
N
T
Ur
P
D
Ui
P
D
Bi
rD
W
i
P
D
Vi
P
T
Ur
N
D
Ui
N
D
W
i
N
D
Vi
N
T
VrTh
P
T
Br
r
T
W
r
P
T
W
r
N
T
Vr
N
C
RR
PC
SR
PC
TR
P
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor
R
25
: resistance at absolute temperature T
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
B
(25/50)
= In( )/( )
R
25
R
50
1
T
25
1
T
50