SMPS MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN1001) PD-94809 IRFP460NPbF HEXFET(R) Power MOSFET VDSS Rds(on) max ID 500V 0.24 20A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 20 13 80 280 2.2 30 5.0 -55 to + 150 Units A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Typical SMPS Topologies: Full Bridge PFC Boost Notes through are on page 8 www.irf.com 1 11/3/03 IRFP460NPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.58 --- V/C Reference to 25C, ID = 1mA --- --- 0.24 VGS = 10V, ID = 12A 3.0 --- 5.0 V VDS = VGS, ID = 250A --- --- 25 VDS = 500V, VGS = 0V A --- --- 250 VDS = 400V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 10 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 23 87 34 33 3540 350 30 3930 95 200 Max. Units Conditions --- S VDS = 50V, ID = 12A 124 ID = 20A 40 nC VDS = 400V 57 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 20A ns --- R G = 4.3 --- R D = 13,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 340 20 28 mJ A mJ Typ. Max. Units --- 0.24 --- 0.45 --- 40 C/W Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 20 --- --- showing the A G integral reverse --- --- 80 S p-n junction diode. --- --- 1.8 V TJ = 25C, IS = 20A, VGS = 0V --- 550 825 ns TJ = 25C, IF = 20A --- 7.2 10.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFP460NPbF 100 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 0.1 5.0V 0.01 20s PULSE WIDTH TJ = 25 C 0.001 0.1 1 10 10 5.0V 1 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 C 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 6 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 20s PULSE WIDTH TJ = 150 C 11 ID = 20A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP460NPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss Coss 1000 Crss 100 10 10 100 ID = 20A 12 8 4 1000 FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 100 120 140 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ID, Drain-to-Source Current (A) TJ = 150 C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VSD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 400V VDS = 250V VDS = 100V 16 0 1 ISD , Reverse Drain Current (A) C, Capacitance(pF) 10000 20 VGS , Gate-to-Source Voltage (V) 100000 1.6 10 100sec 1msec 1 T A = 25C 10msec T J = 150C 0.1 Single Pulse 10 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFP460NPbF 20 VGS ID , Drain Current (A) RD VDS RG 15 D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 TC , Case Temperature ( C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) IRFP460NPbF 750 ID 8.9A 12.6A BOTTOM 20A TOP 600 450 300 150 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50K 12V QGS .2F .3F QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFP460NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP460NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 2.50 (.089) 1.50 (.059) 4 5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1 2 5.30 (.209) 4.70 (.185) NOTES: 5.50 (.217) 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 3 -C- 14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 0.80 (.031) 3X 0.40 (.016) 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 2.60 (.102) 2.20 (.087) C A S 3.40 (.133) 3.00 (.118) 2X LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD GateASSIGNMENTS 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain 4 - Collector 4 - DRAIN TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 ASSEMBLY LOT CODE 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. Starting TJ = 25C, L = 1.8mH Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. ( See fig. 11 ) RG = 25, IAS = 20A. (See Figure 12) as Coss while VDS is rising from 0 to 80% VDSS ISD 20A, di/dt 140A/s, VDD V(BR)DSS, TJ 150C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 8 www.irf.com