MZ0912B100Y,114 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of June 1992 1997 Feb 20

DISCRETE SEMICONDUCTORS

MX0912B100Y; MZ0912B100Y

NPN microwave power transistors

1997 Feb 20 2

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

FEATURES

•Interdigitated structure provides high emitter efficiency

•Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

•Gold metallization realizes very stable characteristics

and excellent lifetime

•Multicell geometry improves power sharing and low

thermal resistance

•Input and output matching cell allows an easier design

of circuits.

APPLICATIONS

•Common base class-C broadband pulse power

amplifiers operating at 960 to 1215 MHz for TACAN

application.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistors.

The MX0912B100Y has a SOT439A metal ceramic flange

package and improved output prematching cells. It is

recommended for new designs.

The MZ0912B100Y has a SOT443A metal ceramic flange

package with the base connected to the flange. It is

mounted in common base configuration and specified in

class C.

PINNING

PIN DESCRIPTION

1 collector

2 emitter

3 base connected to ﬂange

Fig.1 Simplified outline and symbol (SOT439A).

lumns

MAM045

Top view

Fig.2 Simplified outline and symbol (SOT443A).

handbook, halfpage

MAM314

Top view

QUICK REFERENCE DATA

Microwave performance at Tmb ≤25 °C in a common base class-C broadband ampliﬁer.

MODE OF OPERATION f

(GHz) VCC

(V) PL

(W) GP

(dB) ηC

(%) Zi; ZL

(Ω)

Class-C; tp=10µs; δ= 10 % 0.960 to 1.215 50 >100 >7 >42 see Figs 8 and 9

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1997 Feb 20 3

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −65 V

VCES collector-emitter voltage RBE =0Ω−60 V

VCEO collector-emitter voltage open base −20 V

VEBO emitter-base voltage open collector −3V

Ccollector current (DC) tp≤10 µs; δ≤10 % −6A

tot total power dissipation

(peak power) tp≤10 µs; δ≤10 %;

Tmb =75°C−290 W

Tstg storage temperature −65 +200 °C

Tjoperating junction temperature −200 °C

Tsld soldering temperature up to 0.2 mm from ceramic;

t≤10 s −235 °C

Fig.3 Maximum power dissipation derating as a

function of mounting-base temperature.

tp=10µs; δ= 10 %; Ptot max = 290 W.

handbook, halfpage

−50 200

300

100

200

Ptot

(W)

100 Tmb (°C)

MGL046

1997 Feb 20 4

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

THERMAL CHARACTERISTICS

Notes

1. See “

Mounting recommendations in the General part of handbook SC19a”

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

Tmb =25°C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =25°C measured in the test jig as shown in Fig.7 and working in class C broadband

in pulse mode; note 1.

Notes

1. Operating conditions and performance for other pulse formats can be made available on request.

2. VCC during pulse.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Rth j-mb thermal resistance from junction to mounting-base Tj= 125 °C 3.2 K/W

Rth mb-h thermal resistance from mounting-base to heatsink Tj= 125 °C; note 1 0.2 K/W

Zth j−hthermal impedance from junction to heatsink tp=10µs; δ=10%;

j= 125 °C; notes 1 and 2 0.43 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

ICBO collector cut-off current VCB =65V; I

E= 0 40 mA

VCB =50V; I

E=0 4 mA

CES collector cut-off current VCB =60V; R

BE = 0 40 mA

IEBO emitter cut-off current VEB = 1.5 V; IC= 0 400 µA

MODE OF OPERATION f

(GHz) VCC

(V)(2) PL

(W) Gp

(dB) ηC

(%) Zi/ZL

(Ω)

Class C;

tp=10µs; δ= 10% 0.960 to 1.215 50 ≥100

typ. 115 ≥7

typ. 7.6 ≥42

typ. 44 see Figs 8 and 9

tp= 300 µs; δ= 10%;

see Fig.6 1.03 to 1.09 50 typ. 125 typ. 8 typ. 50

1997 Feb 20 5

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

Fig.4 Load power as a function of frequency.

(In broadband test circuit as shown in Fig.7)

VCC = 50 V; tp=10µs; δ= 10%.

handbook, halfpage

0.95 1.05 1.15 1.25

f (GHz)

(W)

130

110

120

MGL047

Fig.5 Collector efficiency as a function of

frequency. (In broadband test circuit as

shown in Fig.7)

VCC = 50 V; tp=10µs; δ= 10%.

handbook, halfpage

0.95 1.05 1.15 1.25

f (GHz)

ηC

(%)

MGL048

1997 Feb 20 6

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

List of components

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L1 0.65 mm diameter copper wire −total length = 12 mm;

height of loop = 12 mm −

L2 4 turns 0.65 mm diameter

copper wire −int. dia. 3 mm; L = 5 mm −

C1 capacitor 100 pF −ATC, ref. 100A101KP50X

C2 tantalum capacitor 10 µF; 50 V −−

C3 electrolytic capacitor 470 µF; 63 V −−

C4 feedthrough bypass capacitor −− Erie, ref. 1250-003

C5, C6 variable gigatrim capacitor 0.6 to 4.5 pF −Tekelec, ref. 727.1

Fig.6 Pulse definition.

handbook, full pagewidth

MGK066

300 µs

1 µs

3 ms

1997 Feb 20 7

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

Fig.7 Broadband test circuit.

Dimensions in mm.

Substrate: Epsilam 10.

Thickness: 0.635 mm.

Permittivity: εr= 10.

handbook, full pagewidth

MGK067

C3 +VCC

0.635 0.635

18 23 3 4 10

103

12.5

331

1997 Feb 20 8

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

Fig.8 Input impedance as a function of frequency associated with optimum load impedance.

VCC = 50 V; Zo=10Ω; PL= 100 W.

handbook, full pagewidth

MGL044

0.2

0.5

0.2

0.5

∞

00.2 0.5 1 2 5 10

+ j

− j

1.215 GHz

0.960 GHz

Fig.9 Optimum load impedance as a function of frequency associated with input impedance.

VCC = 50 V; Zo=10Ω.; PL= 100 W.

handbook, full pagewidth

MGL045

0.2

0.5

0.2

0.5

∞

00.2 0.5 1 2 5 10

+ j

− j1.215 GHz 0.960 GHz

1997 Feb 20 9

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

PACKAGE OUTLINES

Fig.10 SOT439A.

Dimensions in mm.

Torque on nut: max 0.4 Nm.

Recommended screw: M3

Recommended pitch for mounting screw: 19 mm.

handbook, full pagewidth

0.15 max

3.3

2.9

12.85 max

max

1.6 max

23 max3

seating plane

MBC881

3.7

max

2.7

min

10.3

10.0

9.85

max

2.7

min

8.25

16.5

3.3

1997 Feb 20 10

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

Fig.11 SOT443A.

Dimensions in mm.

Torque on nut: max 0.5 Nm.

Recommended screw: M3

handbook, full pagewidth

MBC663

10.5

max 10.5

max 23

max

16.5

3.4

3.2

3.1

4 min

0.5 X

0.5 Y

3.5

2.9

0.1

1.7 max

6.4

max

24 max 0.5 Y

seating plane

1997 Feb 20 11

Philips Semiconductors Product speciﬁcation

NPN microwave power transistors MX0912B100Y; MZ0912B100Y

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 20 Document order number: 9397 750 01717