ABB Semiconductors AG reserves the right to change specifications without notice.
VRRM = 400
V
IFAVM = 11350
A
IFRMS = 17800
A
IFSM = 85000
A
VF0 = 0.74
V
rF = 0.018
mΩ
Doc. No. 5SYA1159-01 July 06
• Optimized for high current rectifiers
• Very low on-state voltage
• Very low thermal resistance
Blocking
VRRM Repetitive peak reverse voltage 400
V Half sine wave, tP = 10 ms, f = 50 Hz
VRSM Maximum peak reverse voltage 450
V Half sine wave, tP = 10 ms
IRRM Repetitive peak reverse current ≤ 50
mA T
j
= 170 °C VR = VRRM
Mechanical
FM Mounting force min.
35
kN
max.
40
kN
a Acceleration:
Device unclamped
Device clamped
50
200
m/s2
m/s2
m Weight 0.22
kg
DS Surface creepage distance 4
mm
Da Air strike distance 4
mm
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
Rectifier Diode
5SDD 0120C0400
5SDD 0120C0400
ABB Semiconductors AG reserves the right to change specifications without notice.
page 2 of 4 Doc. No. 5SYA1159-01 July 06
On-state
IFAVM Max. average on-state current 11350
A
IFRMS Max. RMS on-state current 17800
A Half sine wave, Tc = 85 °C
85000
A tp
=
10
ms Before surge
IFSM Max. peak non-repetitive surge current
92500
A tp
=
8.3
ms T
j
= 170 °C
∫I2dt Max. surge current integral 36100
kA2s
tp
=
10
ms After surge:
35700
kA2s
tp
=
8.3
ms VR ≈ 0V
VF min Minimum on-state voltage ≥
0.83
V
VF max Maximum on-state voltage ≤
0.88
V
IF
=
8000
A Tj = 170 °C
VF0 Threshold voltage 0.74
V Approximation for T
j
= 170 °C
rF Slope resistance 0.018
mΩ IF
=
8 - 18
kA
Thermal characteristics
Tj Operating junction temperature range -40...170 °C
Tstg Storage temperature range -40…170 °C
≤
12
K/kW
Anode side cooled
≤
12
K/kW
Cathode side cooled
Rth(j-c) Thermal resistance
junction to case
≤
6
K/kW
Double side cooled
≤
6
K/kW
Single side cooled Rth(c-h) Thermal resistance
case to heatsink ≤
3
K/kW
Double side cooled
FM = 35…40 kN
( )
)e-(1R = (t)Z 4
1i
/t-
c-jth i
∑
=
iτ
i 1 2 3 4
Ri (K/kW)
3.37 1.50 0.63 0.67
τi (s) 0.095 0.048 0.0035 0.001
F
M
= 35…40 kN
1
0
-
3
1
0
-
2
1
0
-
1
1
0
0
t
[
s
]
0
2
4
6
8
Z
thJC
[
K
/
k
W
]
Double sided cooling
F
m
=
3
5
.
.
.
4
0
k
N
5
S
D
D
0
1
2
0
C
0
4
0
0
Double side cooled
Fig. 2
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
5SDD 0120C0400
ABB Semiconductors AG reserves the right to change specifications without notice.
page 3 of 4 Doc. No. 5SYA1159-01 July 06
On-state characteristics Surge current characteristics
0
.
0
0
.
2
0
.
4
0
.
6
0
.
8
1
.
0
1
.
2
1
.
4
1
.
6
V
F
[
V
]
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
I
F
[
A
]
min.
m
a
x
.
Tj = 170°C
5SDD 0120C0400
10
0
1
0
1
1
0
2
t
[
m
s
]
I
FSM
[
k
A
]
40
60
80
100
120
140 IFSM
∫
i
2
t
∫
i
2
d
t
[
M
A
2
s
]
2
4
2
8
3
2
3
6
4
0
4
4
T
j
=
1
7
0
°
C
5SDD 0120C0400
Fig. 3 Forward current vs. forward voltage (min.
and max. values).
Fig. 4
Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
Current load capability
110 1
0
0
16
18
20
22
24
26
28
n
=
5
0
p
u
l
s
e
s
n
=
1
0
0
p
u
l
s
e
s
n
=
5
0
0
p
u
l
s
e
s
n
=
1
0
0
0
p
u
l
s
e
s
I
(
k
A
)
I
D
v
s
.
E
D
,
1
0
0
0
H
z
s
q
u
a
r
e
w
a
v
e
,
T
=
1
0
0
°
C
D
C
D
u
t
y
c
y
c
l
e
E
D
(
%
)
5
S
D
D
0
1
2
0
C
0
4
0
0
Fig. 5 DC-output current with single-phase centre tap
5SDD 0120C0400
Current load capacity, cont.
110 1
0
0
16
18
20
22
24
26
28
30
32
34
36
n
=
5
0
p
u
l
s
e
s
n
=
1
0
0
p
u
l
s
e
s
n
=
5
0
0
p
u
l
s
e
s
n
=
1
0
0
0
p
u
l
s
e
s
D
u
t
y
c
y
c
l
e
E
D
(
%
)
I
D
(
k
A
)
I
D
v
s
.
E
D
,
1
0
0
0
H
z
s
q
u
a
r
e
-
w
a
v
e
,
T
=
6
0
°
C
h
5
S
D
D
0
1
2
0
C
0
4
0
0
Fig. 6 DC-output current with single-phase centre tap
-
+
I
D
Fig. 7
Definition of ED for typical welding
sequence
Fig. 8 Definition of ID for single-phase centre tap
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Doc. No. 5SYA1159-01 July 06
