Device Type Photodiode Responsivity Minimum Capacitance Maximum Rise Time NEP
element size (typical) Breakdown (typical) Dark (typical) (typical)
Voltage Current
Area Linear @900nm @10
m
A @0V @20V @1V @30V x 1014
mm2mm A / W V pF pF nA ns W/
Ö
Hz
SMP400 0.62 1 x 1 0.55 60 12 2.5 0.1 4 7.2
SMP525 2.05 4.5 x 0.7 0.55 60 45 6 0.25 n/a n/a
SMP550 5.19 2.5 x 2.5 0.55 60 55 10 0.7 8 9.8
SMP600 14.74 4 x 4 0.55 60 90 25 2 9 19
SMP690 35.00 6 x 6 0.55 60 150 20 3 12 20
SMP900 42.35 7 x 7 0.55 60 350 65 4 13 24
SMP1500 76.85 9 x 9 0.55 60 800 150 9 16 28
SMP2000 100.11 12 x 12 0.55 60 1800 200 12 19 30
SMP SERIES
LAB
SEME
Prelim. 8/96
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
HIGH SENSITIVITY
SINGLE ELEMENT
SILICON PHOTODIODES
APPLICATIONS:
• MEDICAL INSTRUMENTS
• METROLOGY
• LABORATORY INSTRUMENTATION
• POSITION AND PROXIMITY SENSORS
• REMOTE SENSING
• PHOTO-INTERRUPTORS
• SMOKE DETECTORS
• FIBRE OPTIC DETECTORS
FEATURES:
• HIGH RESPONSIVITY
• WIDE RANGE OF ELEMENT SIZES
• LOW LEAKAGE CURRENT
• LOW CAPACITANCE
• EXCELLENT LINEARITY
• LOW NOISE
• WIDE SPECTRAL RESPONSE
• WIDE INTRINSIC BANDWIDTH
• INTEGRAL OPTICAL FILTER OPTION*
• EMI SCREENING MESH AVAILABLE
• HERMETIC METAL PACKAGES
• LOW COST
Electrical Specifications (TA= 25°C unless otherwise stated)
Description
The SMP devices are a range of single element Silicon
P.I.N. photodiodes. The device structure has be designed
to give maximum sensitivity and high speed of response.
The device structure shown above has a high resistance
intrinsic layer sandwiched between P and N+ layers.
Various optical filters can be incor porated inside the
package to pass selected regions of the ultra-violet to
infra-red spectrum. The optical filters can be ionically
coloured glass or vapour-deposited dielectric layers on a
glass substrate. For more details of the filter per mutations,
contact Semelab Plc.