1
Motorola Thyristor Device Data
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•Blocking Voltage to 800 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
•Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Repetitive Peak Off-State Voltage(1)
(TJ = –40 to +100°C, Gate Open) T2500BFP
T2500DFP
T2500MFP
T2500NFP
VDRM
200
400
600
800
Volts
On-State RMS Current (TC = +80°C)(2)
(Full Cycle Sine Wave 50 to 60 Hz) IT(RMS) 6 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C) ITSM 60 Amps
Circuit Fusing Considerations
(t = 8.3 ms) I2t 40 A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 1 µs) PGM 1 Watt
Average Gate Power
(TC = +80°C, t = 8.3 ms) PG(AV) 0.2 Watt
Peak Gate Trigger Current (Pulse Width = 10 µs) IGTM 4 Amps
RMS Isolation Voltage (TA = 25°C, Relative Humidity
p
20%) VISO 1500 Volts
Operating Junction Temperature Range TJ–40 to +100 °C
Storage Temperature Range Tstg –40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case(2)
Case to Sink
Junction to Ambient
RθJC
RθCS
RθJA
2.7
2.2(typ)
60
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Order this document
by T2500FP/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
6 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Off-State Current (Either Direction)
(VD = Rated VDRM, TJ = 100°C, Gate Open) IDRM — — 2 mA
Maximum On-State Voltage (Either Direction)*
(IT = 30 A Peak) VTM — — 2 Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
—
—
—
—
10
20
15
30
25
60
25
60
mA
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 12 Ohms)
(VD = VDROM, RL = 125 Ohms, TC = 100°C, All Trigger Models)
VGT —
0.2 1.25
—2.5
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 150 mA, TC = 25°C)
IH— 15 30 mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, IT = 10 A,
IGT = 160 mA, Rise Time
p
0.1 µs)
tgt — 1.6 — µs
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, IT(RMS) = 6 A,
Commutating di/dt = 3.2 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c) — 10 — V/µs
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100°C)
dv/dt — 100 — V/µs
*Pulse Test: Pulse Width
p
300 µs, Duty Cycle
p
2%.
Electrical Characteristics of Recommended
Bidirectional Switches
Usage General
Part Number MBS4991 MBS4992
VS6 – 10 V 7.5 – 9 V
IS350 µA Max 120 µA Max
VS1 – VS2 0.5 V Max 0.2 V Max
Temperature
Coefficient 0.02%/°C Typ
Trigger devices are recommended
for gating on Triacs. They provide:
1. Consistent predictable turn-on
points.
2. Simplified circuitry.
3. Fast turn-on time for cooler,
more efficient and reliable
operation.
Quadrant Definitions
Quadrant II Quadrant I
Quadrant III Quadrant IV
MT2(+)
MT2(–)
MT2(+), G(–) MT2(+), G(+)
MT2(–), G(–) MT2(–), G(+)
G(–) G(+)
3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221C–02
1 2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
–Y–
–B– –T–
Q
P
A
K
H
Z
GL
F
D3 PL
M
B
M
0.25 (0.010) Y
E
NS
J
R
C
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.680 0.700 17.28 17.78
B0.388 0.408 9.86 10.36
C0.175 0.195 4.45 4.95
D0.025 0.040 0.64 1.01
E0.340 0.355 8.64 9.01
F0.140 0.150 3.56 3.81
G0.100 BSC 2.54 BSC
H0.110 0.155 2.80 3.93
J0.018 0.028 0.46 0.71
K0.500 0.550 12.70 13.97
L0.045 0.070 1.15 1.77
N0.049 ––– 1.25 –––
P0.270 0.290 6.86 7.36
Q0.480 0.500 12.20 12.70
R0.090 0.120 2.29 3.04
S0.105 0.115 2.67 2.92
Z0.070 0.090 1.78 2.28
4 Motorola Thyristor Device Data
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in dif ferent
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T2500FP/D
*T2500FP/D*
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