IRFP460A 20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET Applications Features * Switch Mode Power Supplies (SMPS) * Low Gate Charge Requirement * Uninterruptable Power Supply * Improved Gate, Ruggedness * High Speed Power Switching Qg results Avalanche in and Simple Drive Dynamic dv/dt * Improved rDS(ON) * Reduced Miller Capacitance Package Symbol JEDEC TO-247 SOURCE DRAIN D GATE G DRAIN (FLANGE) S Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol VDSS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Pulsed1 Power dissipation Derate above 25oC Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw Ratings 500 30 Units V V 20 A 13 80 280 2.2 -55 to 150 300 (1.6mm from case) 10ibf*in (1.1N*m) A A W W/oC oC oC Thermal Characteristics RJC Thermal Resistance Junction to Case RCS Thermal Resistance Case to Sink, Flat, Greased Surface RJA Thermal Resistance Junction to Ambient (c)2002 Fairchild Semiconductor Corporation 0.45 oC/W 0.24 TYP oC/W 40 oC/W IRFP460A Rev. B January 2002 IRFP460A January 2002 Device Marking IRFP460A Device IRFP460A Package TO-247 Reel Size - Tape Width - Quantity - Electrical Characteristics TJ = 25C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units ID = 250A, VGS = 0V V/C Reference to 25oC, ID = 1mA VGS = 10V, ID = 12A VDS = VGS, ID = 250A VDS = 25V TC =25oC VGS = 0V TC = 150oC VGS = 20V 500 - - V - 0.61 - 2.0 - 0.17 3.3 - 0.22 4.0 25 250 100 Statics BVDSS Drain to Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient rDS(ON) VGS(th) Drin to Source On-Resistance Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V A nA Dynamics gfs Qg(TOT) Qgs Qgd td(ON) tr td(OFF) tf CISS COSS CRSS Forward Transconductance Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 50V, ID = 12A VGS = 10V, VDS = 400V, ID = 20A VDD = 250V, ID = 20A RG = 4.3, RD = 13 VDS = 25V, VGS = 0V, f = 1MHz 11 - - S - 56 13 17 13 8 41 6 70 18 22 - nC nC nC ns ns ns ns - 3520 410 21 - pF pF pF 960 28 - 20 - mJ A mJ - - 20 A - - 80 A - 0.86 560 8.0 1.8 710 11 V ns C Avalanche Characteristics EAS IAR EAR Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy1 Drain-Source Diode Characteristics IS ISM VSD trr QRR Continuous Source Current (Body Diode) Pulsed Source Current1 (Body Diode) Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge MOSFET symbol showing the integral reverse p-n junction diode. D G S ISD = 20A ISD = 20A, dISD/dt = 100A/s ISD = 20A, dISD/dt = 100A/s Notes: 1: 2: 3: 4: Repetitive rating; pulse width limited by maximum junction temperature VDD = 50V, Starting TJ = 25C, L = 7.0mH, RG = 25, IAS = 14A ISD </= 14A, di/dt </= 130A/s, VDD </= V(BR)DSS, TJ </= 150C Pulse width </= 300s; duty cycle </= 2% (c)2002 Fairchild Semiconductor Corporation IRFP460A Rev. B January 2002 IRFP460A Package Marking and Ordering Information IRFP460A Typical Characteristics 100 TJ = 25oC ID, DRAIN TO SOURCE CURRENT (A) VGS DESCENDING 10V 7V 6V 5.5V 5V 4.5V 10 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.0 1.0 10 ID , DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.0 10 Figure 1. Output Characteristics Figure 2. Output Characteristics TJ = 25oC DUTY CYCLE = 0.5% MAX VDD = 50V 50 40 30 TJ = 150oC 20 10 0 2 4 8 6 10 0.5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0.4 0.3 0.2 0.1 VGS = 10V, ID = 20A 0 -50 -25 VGS , GATE TO SOURCE VOLTAGE (V) 25 75 50 100 125 150 Figure 4. Drain To Source On Resistance vs Junction Temperatrue 8000 12 VGS = 0V, f = 1MHz ID = 20A VGS , GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 0 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Transfer Characteristics 6000 CISS 4000 COSS 2000 CRSS 0 100 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80s 0 4.5V 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 70 60 TJ = 150oC VGS DESCENDING 10V 7V 6V 5.5V 5V 4.5V 1.0 100 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (ohms) ID, DRAIN TO SOURCE CURRENT (A) 100 0 10 20 30 40 50 60 70 80 90 100 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 5. Capacitance vs Drain To Source Voltage (c)2002 Fairchild Semiconductor Corporation 10 100V 250V 8 6 400V 4 2 0 0 10 20 30 40 50 60 70 Qg, GATE CHARGE (nC) Figure 6. Gate Charge Waveforms For Constant Gate Current IRFP460A Rev. B January 2002 IRFP460A Typical Characteristics (Continued) 1000 TC = 25oC ID, DRAIN CURRENT (A) ISD , SOURCE TO DRAIN CURRENT (A) 100 TJ = 25oC TJ = 150oC 10 1 100s OPERATION IN THIS AREA LIMITED BY RDS(ON) 100 1ms 10 10ms 1.0 DC 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.0 1.6 10 100 1000 VDS , DRAIN TO SOURCE VOLTAGE (V) VSD , SOURCE TO DRAIN VOLTAGE (V) Figure 7. Body Diode Forward Voltage vs Body Diode Current Figure 8. Maximum Safe Operating Area 20 ID, DRAIN CURRENT (A) 16 12 8 4 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) ZJC , NORMALIZED THERMAL RESPONSE Figure 9. Maximum Drain Current vs Case Temperature 100 0.50 0.20 0.10 10-1 t1 0.05 PD t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) Figure 10. Normalized Transient Thermal Impedance, Junction to Case (c)2002 Fairchild Semiconductor Corporation IRFP460A Rev. B January 2002 IRFP460A Test Circuits and Waveforms BVDSS VDS tP VDS L IAS VDD VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDD - VGS DUT tP IAS 0V 0 0.01 tAV Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms VDS VDD Qg(TOT) RL VDS VGS = 10V VGS Qg(5) + VDD VGS = 5V VGS - VGS = 1V DUT 0 Ig(REF) Qg(TH) Qgs Qgd Ig(REF) 0 Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms VDS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + VGS VDD - 10% 0 10% DUT 90% RGS VGS VGS 0 Figure 15. Switching Time Test Circuit (c)2002 Fairchild Semiconductor Corporation 10% 50% 50% PULSE WIDTH Figure 16. Switching Time Waveform IRFP460A Rev. B January 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4