1
Subject to change without notice.
www.cree.com
FEATURES
Thin 95 μm Chip
Reduced Forward Voltage
3.2 V Typical at 20 mA
RazerThin LED Performance
460nm - 3.8-11.1 mW
470nm - 3.4-10.4 mW
505nm - 2.0-6.5 mW
527nm - 1.7-6.0 mW
Single Wire Bond Structure
Class 2 ESD Rating
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APPLICATIONS
Mobile Phone Key Pads
White LEDs
Blue LEDs
Green LEDs
Cellular Phone LCD Backlighting
Digital Camera Flash For Mobile Appliances
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
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RazerThin® LEDs
CxxxRT290-S0200
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efcient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs
include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required.
Datasheet: CPR3CL, Rev. B
CxxxRT290-S0200 Chip Diagram
Top View Bottom View
G•SiC LED Chip
270 x 270 μm
SiC Substrate
h = 95 μm
Backside
Metallization
Gold Bond Pad
110 μm Diameter
Die Cross Section
Cathode (-)
Anode (+)
Mesa (junction)
246 x 246 μm
InGaN
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
2CPR3CL Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at TA = 25°C Notes 1&3 CxxxRT290-S0200
DC Forward Current 30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA
LED Junction Temperature 125°C
Reverse Voltage 5 V
Operating Temperature Range -40°C to +100°C
Storage Temperature Range -40°C to +100°C
Electrostatic Discharge Threshold (HBM) Note 2 1000 V
Electrostatic Discharge Classication (MIL-STD-883E) Note 2 Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Note 3
Part Number Forward Voltage (Vf, V) Reverse Current
[I(Vr=5V), μA]
Min. Typ. Max. Max.
C460RT290-S0200 2.7 3.2 3.7 1
C470RT290-S0200 2.7 3.2 3.7 1
C505RT290-S0200 2.7 3.2 3.7 1
C527RT290-S0200 2.7 3.2 3.7 1
Mechanical Specications CxxxRT290-S0200
Description Dimension Tolerance
P-N Junction Area (μm) 246 x 246 ± 25
Top Area (μm) 270 x 270 ± 25
Bottom Area (μm) 270 x 270 ± 25
Chip Thickness (μm) 95 ± 15
Au Bond Pad Diameter (μm) 110 ± 20
Au Bond Pad Thickness (μm) 1.2 ± 0.5
Back Contact Metal Width (μm) 20 ± 10
Notes:
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specic package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
All products conform to the listed minimum and maximum specications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efciency decreases at higher currents. Typical values given
are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances
products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol
OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
Specications are subject to change without notice.
1.
2.
3.
4.
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
3CPR3CL Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxRT290-S0200
All LED chips are sorted onto die sheets according to the bins shown below. All dominant wavelength and radiant ux
values are specied at If = 20 mA.
C460RT290-S0200
C460RT290-0205 C460RT290-0206 C460RT290-0207 C460RT290-0208
C460RT290-0201 C460RT290-0202 C460RT290-0203 C460RT290-0204
455 nm 457.5 nm 460 nm 462.5 nm 465 nm
11.1 mW
7.2 mW
3.8 mW
Dominant Wavelength
Radiant Flux
C470RT290-S0200
C470RT290-0205 C470RT290-0206 C470RT290-0207 C470RT290-0208
C470RT290-0201 C470RT290-0202 C470RT290-0203 C470RT290-0204
465 nm 467.5 nm 470 nm 472.5 nm 475 nm
10.4 mW
6.7 mW
3.4 mW
Dominant Wavelength
Radiant Flux
C527RT290-S0200
C527RT290-0204 C527RT290-0205 C527RT290-0206
C527RT290-0201 C527RT290-0202 C527RT290-0203
520 nm 525 nm 530 nm 535 nm
6.0 mW
3.5 mW
1.7 mW
Dominant Wavelength
Radiant Flux
C505RT290-S0200
C505RT290-0203 C505RT290-0204
C505RT290-0201 C505RT290-0202
500 nm 505 nm 510 nm
6.5 mW
4.0 mW
2.0 mW
Dominant Wavelength
Radiant Flux
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
4CPR3CL Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various
radiant ux and dominant wavelength bins.
Forward Current vs. Forward Voltage
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Vf (V)
If (mA)
Wavelength Shift vs Forward Current
-4.00
-2.00
0.00
2.00
4.00
6.00
8.00
10.00
12.00
0 5 10 15 20 25 30
If (mA)
460nm
527nm
505nm
Relative Intensity vs Peak Wavelength
Relative Intensity (%)
Wavelength (nm)
400
500
600
20
40
60
80
100
Relative Intensity vs Forward Current
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30
If(mA)
% Intensity