IXGH48N60B3C1 - IXYS SEMICONDUCTOR

Symbol Test Conditions Maximum Ratings

VCES TC = 25°C to 150°C 600 V

VCGR TJ = 25°C to 150°C, RGE = 1MΩ600 V

VGES Continuous ± 20 V

VGEM Transient ± 30 V

IC25 TC = 25°C (Limited by Leads) 75 A

IC110 TC = 110°C 48 A

IF110 TC = 110°C 20 A

ICM TC = 25°C, 1ms 280 A

SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 120 A

(RBSOA) Clamped Inductive Load @ ≤ VCES

PCTC = 25°C 300 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10 seconds 260 °C

MdMounting Torque 1.13/10 Nm/lb.in.

Weight 6 g

DS100140A(06/09)

G = Gate C = Collector

E = Emitter TAB = Collector

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVCES IC = 250μA, VGE = 0V 600 V

VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES, VGE = 0V 50 μA

TJ = 125°C 1.75 mA

IGES VCE = 0V, VGE = ± 20V ±100 nA

VCE(sat) IC = 32A, VGE = 15V, Note 1 1.8 V

Medium Speed Low Vsat PT

IGBT 5 - 40 kHz Switching

IXGH48N60B3C1

TO-247

GC

E

( TAB )

GenX3TM 600V IGBT

w/ SiC Anti-Parallel

Diode

VCES = 600V

IC110 = 48A

VCE(sat) ≤≤

≤≤

≤ 1.8V

tfi(typ) = 116ns

Preliminary Technical Information

Features

zOptimized for Low Conduction and

Switching Losses

zSquare RBSOA

zAnti-Parallel Schottky Diode

zInternational Standard Package

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zPower Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXGH48N60B3C1

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs IC = 30A, VCE = 10V, Note 1 28 46 S

Cies 3980 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 190 pF

Cres 45 pF

Qg 115 nC

Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES 21 nC

Qgc 40 nC

td(on) 22 ns

tri 26 ns

Eon 0.45 mJ

td(off) 130 200 ns

tfi 116 200 ns

Eoff 0.66 1.20 mJ

td(on) 22 ns

tri 26 ns

Eon 0.50 mJ

td(off) 190 ns

tfi 157 ns

Eoff 1.30 mJ

RthJC 0.42 °C/W

RthCS 0.21 °C/W

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 (IXGH) Outline

Inductive Load, TJ = 125°C

IC = 30A, VGE = 15V

VCE = 480V, RG = 5Ω

Note 2

Inductive Load, TJ = 25°C

IC = 30A, VGE = 15V

VCE = 480V, RG = 5Ω

Note 2

Reverse Diode (SiC)

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

VF IF = 20A, VGE = 0V, Note 1 1.65 2.10 V

T

J = 125°C 1.80 V

RthJC 0.90 °C/W

Notes

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXGH48N60B3C1

Fig. 1. Output Characteri stics

@ 25 º C

0

10

20

30

40

50

60

70

80

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

VCE - Volts

IC - Amperes

VGE

= 15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Character istics

@ 25 º C

0

50

100

150

200

250

300

0246810121416

VCE - Volts

IC

-

Amperes

VGE

= 15V

13V

11V

7V

9V

Fig. 3. Output Characteri stics

@ 125ºC

0

10

20

30

40

50

60

70

80

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

VCE - Volts

IC - Amperes

VGE

= 15V

13V

11V

7V

5V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction T emperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50-250 255075100125150

TJ - Degrees Centigrade

VCE(sat) - Normalized

VGE

= 15V

I C = 80A

I C = 40A

I C = 20A

Fi g . 5. C o l l ec to r -to -Emitter Vo l t ag e

vs. Gate- to -Emi tter Vo l ta g e

1.2

1.6

2.0

2.4

2.8

3.2

3.6

56789101112131415

VGE - Volts

VCE - Volts

I C

= 80A

40A

20A

TJ = 25ºC

Fig. 6. Input Admittan ce

0

20

40

60

80

100

120

140

160

180

200

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

VGE - Volts

IC

-

Amperes

TJ = 125ºC

25ºC

- 40ºC

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXGH48N60B3C1

Fi g . 11. Maximu m Tran si en t Ther mal I mp ed an ce fo r I GBT

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 7. Transconductance

0

10

20

30

40

50

60

70

80

0 20 40 60 80 100 120 140

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 10. R ever se-B i as Safe Op er ati n g Area

0

20

40

60

80

100

120

140

100 200 300 400 500 600

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 5Ω

dV / dt < 10V / ns

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 300V

I

C

= 40A

I

G

= 10mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXYS REF: G_48N60B3C1(5D)6-03-09

IXGH48N60B3C1

Fig. 12. Inductive Switching

Ener gy L o ss vs . Gate R esi s tan ce

0

1

2

3

4

5

6

5 101520253035404550

RG - Ohms

E

off

- MilliJoules

0.0

0.5

1.0

1.5

2.0

2.5

3.0

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 480V

I

C

= 30A

I

C

= 60A

I

C

= 15A

Fig. 15. Inductive Turn-off

Swit ch i n g Times vs . Gate R esi s tan ce

120

130

140

150

160

170

180

190

200

210

220

5 101520253035404550

RG - Ohms

t f i

- Nanoseconds

150

200

250

300

350

400

450

500

550

600

650

t d(off)

- Nanoseconds

t f i

td(off

)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 480V

I

C

= 60A

I

C

= 30A

I

C

= 15A

Fi g . 13 . In d u ct i ve Swi tch i ng

Energ y L o ss v s. Col l ect o r Cur r ent

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

15 20 25 30 35 40 45 50 55 60

IC - Amperes

E

off

- MilliJoules

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

E

on

- MilliJoules

E

off

E

on - - - -

R

G

= 5Ω

,

V

GE

= 15V

V

CE

= 480V

T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching

Energ y L o ss vs. Ju n ctio n Temp er atu r e

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

E

off

- MilliJoules

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 5Ω

,

V

GE

= 15V

V

CE

= 480V

I

C

= 30A

I

C

= 60A

I

C

= 15A

Fig. 16. Inductive Tur n-off

Swit ch i n g Times vs. Col l ect o r C ur r en t

80

100

120

140

160

180

200

220

15 20 25 30 35 40 45 50 55 60

IC - Amperes

t f i

- Nanoseconds

100

120

140

160

180

200

220

240

t

d

(

off

)

- Nanoseconds

t

f i

td(off)

- - - -

R

G

= 5Ω

, V

GE

= 15V

V

CE

= 480V

T

J

= 125ºC

T

J

= 25ºC

Fig. 17. Inductive Tur n-off

Switchi n g Times vs. Junctio n Temperatur e

100

110

120

130

140

150

160

170

180

190

200

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t f i

- Nanoseconds

120

130

140

150

160

170

180

190

200

210

220

t

d

(

off

)

- Nanoseconds

t

f i

td(off)

- - - -

R

G

= 5Ω

, V

GE

= 15V

V

CE

= 480V

I

C

= 60A, 15A

I

C

= 60A, 15A

I

C

= 30A

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXGH48N60B3C1

Fig. 22. Maxi mum Transi ent Thermal Im pedance for Diodes

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXYS REF: G_48N60B3C1(5D)6-03-09

Fig. 18. Inductive Turn-on

Switc hin g Times vs. Gate R esi st an ce

0

20

40

60

80

100

120

5 101520253035404550

R

G

- Ohms

t

r i

- Nanoseconds

15

20

25

30

35

40

45

50

55

60

65

70

75

t

d

(

on

)

- Nanoseconds

t

r i

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 480V

I

C

= 15A

I

C

= 30A

I

C

= 60A

Fig. 19. Inductive Turn-on

Swit ch i n g Ti mes vs. C o ll ecto r C u r r en t

0

10

20

30

40

50

60

70

80

15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

t r

- Nanoseconds

16

18

20

22

24

26

28

30

32

t d

(

on

)

- Nanoseconds

t

r i

t

d(on)

- - - -

R

G

= 5Ω , V

GE

= 15V

V

CE

= 480V T

J

= 25ºC, 125ºC

Fig. 20. Inductive T urn-on

Switchi n g Times vs. Ju n ction Temperatu re

5

15

25

35

45

55

65

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r i

- Nanoseconds

18

20

22

24

26

28

30

t

d

(

on

)

- Nanoseconds

t

r i

t

d(on)

- - - -

R

G

= 5Ω , V

GE

= 15V

V

CE

= 480V

I

C

= 15A

I

C

= 30A

I

C

= 60A

Fig. 21. Forward Current vs. Forward Voltage

0

10

20

30

40

50

0.00.40.81.21.62.02.42.83.2

V

F

- Volts

I

F

- Amperes

T

J

= 25ºC

T

J

= 125ºC