IXTA110N055T7 - Zilog

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, ID = 250 µA55V

VGS(th) VDS = VGS, ID = 100 µA 2.0 4.0 V

IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA

IDSS VDS = VDSS 2µA

VGS = 0 V TJ = 150°C 250 µA

RDS(on) VGS = 10 V, ID = 25 A, Note 1 5.5 7.0 mΩ

DS99680 (11/06)

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C55V

VDGR TJ= 25°C to 175°C; RGS = 1 MΩ55 V

VGSM Transient ± 20 V

ID25 TC= 25°C 110 A

IDM TC= 25°C, pulse width limited by TJM 300 A

IAR TC= 25°C25A

EAS TC= 25°C 750 mJ

dv/dt IS≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ V

DSS 3 V/ns

TJ≤ 175°C, RG = 5 Ω

PDTC= 25°C 230 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6 mm (0.062 in.) from case for 10 s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

Weight 3g

TrenchMVTM

Power MOSFET

Preliminary Technical Information

N-Channel Enhancement Mode

Avalanche Rated

IXTA110N055T7 VDSS =55 V

ID25 =110 A

RDS(on) ≤≤

≤≤

≤7.0 mΩΩ

ΩΩ

Ω

TO-263 (7-lead) (IXTA..7)

Pin-out:1 - Gate

2, 3 - Source

4 - NC (cut)

5,6,7 - Source

TAB (8) - Drain

1

7

(TAB)

Features

Ultra-low On Resistance

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

175 °C Operating Temperature

Advantages

Easy to mount

Space savings

High power density

Applications

Automotive

- Motor Drives

- High Side Switch

- 12V Battery

- ABS Systems

 DC/DC Converters and Off-line UPS

Primary- Side Switch

 High Current Switching

Applications

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA110N055T7

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs VDS= 10 V; ID = 0.5 ID25, Note 1 38 65 S

Ciss 3080 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 560 pF

Crss 140 pF

td(on) Resistive Switching Times 20 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 30 n s

td(off) RG = 5 Ω (External) 40 n s

tf24 ns

Qg(on) 67 nC

Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 17.5 nC

Qgd 15 nC

RthJC 0.65°C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

TJ = 25°C unless otherwise specified) Min. Typ. Max.

ISVGS = 0 V 110 A

ISM Pulse width limited by TJM 300 A

VSD IF = 25 A A, VGS = 0 V, Note 1 1.0 V

trr IF = 25 A, -di/dt = 100 A/µs70ns

VR = 25 V, VGS = 0 V

Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

Pins: 1 - Gate

2, 3 - Source

4 - Drain

5,6,7 - Source

Tab (8) - Drain

TO-263 (7-lead) (IXTA...7) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications

offered are derived from data gathered during objective characterizations of preliminary

engineering lots; but also may yet contain some information supplied during a pre-

production design evaluation. IXYS reserves the right to change limits, test conditions,

and dimensions without notice.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTA110N055T7

Fig. 1. Output Characteristics

@ 25ºC

0

10

20

30

40

50

60

70

80

90

100

110

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0 2 4 6 8 101214161820

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

7V

5V

9V

Fig. 3. Output Characteristics

@ 150ºC

0

10

20

30

40

50

60

70

80

90

100

110

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 55A Value

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 110A

I

D

= 55A

Fig. 5. R

DS(on)

Normalized to I

D

= 55A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 40 80 120 160 200 240 280 320

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V - - - - T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

10

20

30

40

50

60

70

80

90

100

110

120

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit for TO-263 & TO-220

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA110N055T7

Fig. 7. Input Admittance

0

20

40

60

80

100

120

140

160

180

3 3.5 4 4.5 5 5.5 6 6.5 7

V

GS

- Volts

I

D

- Amperes

T

J

= -40ºC

25ºC

150ºC

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

80

90

0 20 40 60 80 100 120 140 160 180

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

150ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

30

60

90

120

150

180

210

240

270

300

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 10203040506070

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 27.5V

I

D

= 25A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Impedance

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXTA110N055T7

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

21

22

23

24

25

26

27

28

29

30

31

20 22 24 26 28 30 32 34 36 38 40

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 5Ω

V

GS

= 10V

V

DS

= 27.5V

T

J

= 125ºC

T

J

= 25ºC

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

20

30

40

50

60

70

80

90

100

5 7 9 111315171921232527293133

R

G

- Ohms

t

r

- Nanoseconds

18.0

20.5

23.0

25.5

28.0

30.5

33.0

35.5

38.0

t

d ( o n )

- Nanoseconds

t r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 27.5V

I

D

= 40A

I

D

= 20A

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

23.0

23.5

24.0

24.5

25.0

25.5

26.0

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

35.0

37.5

40.0

42.5

45.0

47.5

50.0

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 27.5V I

D

= 20A

I

D

= 40A

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

23

24

25

26

27

20 22 24 26 28 30 32 34 36 38 40

I

D

- Amperes

t

f - Nanoseconds

35.0

37.5

40.0

42.5

45.0

47.5

50.0

52.5

55.0

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 27.5V

T

J

= 125ºC

T

J

= 25ºC

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

21

22

23

24

25

26

27

28

29

30

31

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 5Ω

V

GS

= 10V

V

DS

= 27.5V

I

D

= 40A

I

D

= 20A

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

20

30

40

50

60

70

80

90

100

110

120

5 7 9 111315171921232527293133

R

G

- Ohms

t

f

- Nanoseconds

30

60

90

120

150

180

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 27.5V

I

D

= 40A

I

D

= 20A

IXYS REF: T_110N055T (3V) 7-11-06.xls