BSM 400 GA 120 DN2 IGBT Power Module * Single switch * Including fast free-wheeling diodes * Package with insulated metal base plate Type VCE BSM 400 GA 120 DN2 BSM 400 GA 120 DN2 S IC Package Ordering Code 1200V 550A SINGLE SWITCH C67070-A2302-A70 1200V 550A SSW SENSE 1 C67070-A2308-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values Unit 1200 V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 550 TC = 80 C 400 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 1100 TC = 125 C 800 Power dissipation per IGBT W Ptot TC = 25 C 2700 Chip temperature Tj Storage temperature Tstg -40 ... + 125 Thermal resistance, chip case RthJC 0.045 Diode thermal resistance, chip case RthJCD 0.09 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 + 150 C K/W sec 40 / 125 / 56 Oct-30-1997 BSM 400 GA 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 16 mA 4.5 5.5 6.5 VGE = 15 V, IC = 400 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 400 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 6 8 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 24 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 400 AC Characteristics Transconductance VCE = 20 V, IC = 400 A Input capacitance 216 nF - 26 - - 4 - - 2 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-30-1997 BSM 400 GA 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 400 A RGon = 2.7 Rise time - 100 200 - 110 220 - 550 800 - 80 120 tr VCC = 600 V, VGE = 15 V, IC = 400 A RGon = 2.7 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 400 A RGoff = 2.7 Fall time tf VCC = 600 V, VGE = -15 V, IC = 400 A RGoff = 2.7 Free-Wheel Diode Diode forward voltage V VF IF = 400 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 400 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 400 A, VR = -600 V, VGE = 0 V diF/dt = -3000 A/s, Tj = 125 C Reverse recovery charge - 0.6 C Qrr IF = 400 A, VR = -600 V, VGE = 0 V diF/dt = -3000 A/s Tj = 25 C - 16 - Tj = 125 C - 45 - 3 Oct-30-1997 BSM 400 GA 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 4 2800 W A 2400 Ptot IC 2200 t = 26.0s p 10 3 2000 1800 100 s 1600 10 2 1400 1200 1 ms 1000 800 10 1 10 ms 600 400 DC 200 0 0 10 0 20 40 60 80 100 120 C 160 10 0 10 1 10 2 10 3 TC Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 600 K/W A 500 IC V VCE ZthJC 450 10 -1 400 10 -2 350 300 D = 0.50 250 10 -3 0.20 0.10 200 0.05 150 10 -4 100 0.02 single pulse 0.01 50 0 0 20 40 60 80 100 120 C 160 TC 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-30-1997 BSM 400 GA 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 800 A IC 600 800 A 17V 15V 13V 11V 9V 7V IC 600 500 500 400 400 300 300 200 200 100 100 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 800 A IC 600 500 400 300 200 100 0 0 2 4 6 8 10 V 14 VGE 5 Oct-30-1997 BSM 400 GA 120 DN2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 400 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 Ciss C 600 V 14 800 V 10 1 12 Coss 10 Crss 8 10 0 6 4 2 0 0 400 800 1200 1600 2000 nC 10 -1 0 2800 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 1 ms, L < 20 nH ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH 2.5 12 ICpulsIC ICsc/IC di/dt = 1000A/s 3000A/s 5000A/s 8 di/dt = 1000A/s 3000A/s 5000A/s 1.5 6 1.0 4 allowed number of short circuit: <1000 time between short 2 circuit: >1s 0.5 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-30-1997 BSM 400 GA 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 2.7 par.: VCE = 600 V, VGE = 15 V, IC = 400 A 10 4 10 4 ns ns t tdoff t 10 3 10 3 tdoff tdon tr tr tdon 10 2 10 1 0 100 200 300 400 500 600 700 A tf 10 2 tf 10 1 0 900 5 10 15 20 IC 30 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 2.7 par.: VCE = 600 V, VGE = 15 V, IC = 400 A 250 250 Eon E mWs E 150 mWs 150 Eon Eoff 100 100 50 50 0 0 100 200 300 400 500 600 700 A 900 IC 7 0 0 Eoff 5 10 15 20 30 RG Oct-30-1997 BSM 400 GA 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj Diode 10 0 800 K/W A IF ZthJC 600 500 10 -1 10 -2 Tj=125C Tj=25C 400 D = 0.50 10 -3 0.20 300 0.10 0.05 200 10 0.02 -4 single pulse 0.01 100 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF 8 Oct-30-1997 BSM 400 GA 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 Oct-30-1997 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DN2 Anhang C-Serie Appendix C-series Gehause spezifische Werte Housing specific values Modulinduktivitat stray inductance module typ. LsCE 20 nH Gehausemae C-Serie Package outline C-series Appendix C-series Appendix_C-Serie_BSM400GA120DN2.xls 2001-09-20 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fur technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes fur die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollstandigkeit der bereitgestellten Produktdaten fur diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, fur die wir eine liefervertragliche Gewahrleistung ubernehmen. Eine solche Gewahrleistung richtet sich ausschlielich nach Magabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden fur das Produkt und dessen Eigenschaften keinesfalls ubernommen. 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