1. Product profile
1.1 General description
Intermediate level N-channel and P-channel complementa ry pair enhancement mode
Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This
product is designed and qualified for use in computing , communications, consumer and
industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applicat ion s du e to fast swit ch ing
characteristics
1.3 Applications
Motor and actuator drivers
Power management
Synchronized rectification
1.4 Quick reference data
PHC21025
Complementary intermediate level FET
Rev. 04 — 17 March 2011 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj≥25 °C; Tj≤150 °C;
N-channel --30V
Tj≥25 °C; Tj≤150 °C;
P-channel ---30V
IDdrain current Tsp ≤80 °C; P-channel - - -2.3 A
Tsp ≤80 °C; N-channel - - 3.5 A
Ptot total power dissipation Tamb =25°C [1] --1W
Static characteristics
RDSon drain-source on-state
resistance VGS =-10V; I
D=-1A;
Tj= 25 °C; P-channel;
see Figure 16; see Figure 19
- 0.22 0.25 Ω
VGS =10V; I
D=2.2A;
Tj= 25 °C; N-channel;
see Figure 15; see Figure 18
- 0.08 0.1 Ω
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 2 of 16
Nexperia PHC21025
Complementary intermediate level FET
[1] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a
thermal resistance from ambient to solder point of 90 K/W.
2. Pinning information
3. Ordering information
Dynamic characteristics
QGD gate-drain charge VGS =-10V; I
D=-2.3A;
VDS =-15V; T
j=25°C;
P-channel; see Figure 12
-3-nC
VGS =10V; I
D=2.3A;
VDS =15V; T
j=25°C;
N-channel; see Figure 11
-2.5-nC
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning info rmation
Pin Symbol Description Simplified outline Graphi c sy mbol
1S1source1
SOT96-1 (SO8)
2 G1 gate1
3S2source2
4 G2 gate2
5D2drain2
6D2drain2
7D1drain1
8D1drain1
4
5
1
8
sym114
D1 D1 D2 D2
S1 G1 S2 G2
Table 3. Orderi ng information
Type number Package
Name Description Version
PHC21025 SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 3 of 16
Nexperia PHC21025
Complementary intermediate level FET
4. Limiting values
[1] Pulse width and duty cycle limited by maximum junction temperature.
[2] Maximum permissible dissipation per MOS transistor . Device mounted on printed-circuit board with a thermal resistance from ambient to
solder point of 90 K/W.
[3] Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time.
[4] Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with thermal resistance
from ambient to solder point of 90 K/W.
[5] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a Thermal resistance from ambient
to solder point of 27.5 K/W.
[6] Pulse width and duty cycle limited by maximum junction temperature.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj≥25 °C; Tj≤150 °C; N-channel - 30 V
Tj≥25 °C; Tj≤150 °C; P-channel - -30 V
VGS gate-source voltage - - V
VGSO gate-source voltage open drain -20 20 V
IDdrain current Tsp ≤80 °C; P-chann el - -2.3 A
Tsp ≤80 °C; N-channel - 3.5 A
IDM peak drain current Tsp = 25 °C; pulsed; N-channel;
see Figure 2 [1] -14A
Tsp = 25 °C; pulsed; P-channel;
see Figure 3 [1] --10A
Ptot total power dissipation Tamb =25°C [2] -1W
Tsp =80°C; see Figure 1 [3] -2W
Tamb =25°C [4] -1.3W
[5] -2W
Tstg storage temperature -65 150 °C
Tjjunction temperature - 150 °C
Source-drain diode
ISsource current Tsp ≤80 °C; P-channel - -1.25 A
Tsp ≤80 °C; N-channel - 1.5 A
ISM peak source current Tsp = 25 °C; pulsed; P-channel [6] --5A
Tsp = 25 °C; pulsed; N-channel [6] -6A
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 4 of 16
Nexperia PHC21025
Complementary intermediate level FET
δ = 0.01.
Ts = 80 °C.
(1) RDSon limitation.
Fig 1. Power derating curve Fig 2. SOAR; N-channel
δ = 0.01
Ts = 80 °C.
(1) RDSon limitation.
Fig 3. SOAR; P-channel
0 200
2.5
0
0.5
1.0
1.5
2.0
mlb836
Ts (°C)
50 100 150
Ptot
(W)
mlb833
102
10
110
VDS (V)
ID
(A)
1
10−1
10−1102
10−2
0.1 s
1 ms
DC
(1)
tp =
10μs
tp
tp
T
P
t
T
δ =
mbe155
−10
2
−10
−1
−10
−1
−10
2
−1−10
−10
−2
−10
−1
V
DS
(V)
I
D
(A)
0.1 s
1 ms
DC
(1)
t
p
=
10 μs
t
p
t
p
T
P
t
T
δ =
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 5 of 16
Nexperia PHC21025
Complementary intermediate level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to solder
point --35K/W
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
mbe152
tp (s)
10−610−1110−2
10−3
10−510−4
10
1
102
Rth j-s
(K/W)
10−1
0.5
0.1
0
0.05
0.33
0.01
0.02
0.2
δ =
0.75
tp
tp
T
P
t
T
δ =
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 6 of 16
Nexperia PHC21025
Complementary intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage ID=-10µA; V
GS =0V; T
j=25°C;
P-channel -30--V
ID=10µA; V
GS =0V; T
j=25°C;
N-channel 30--V
VGS(th) gate-source threshold voltage ID=-1mA; V
DS =V
GS; Tj=25°C;
P-channel; see Figure 17 -1 - -2.8 V
ID=1mA; V
DS =V
GS; Tj=25°C;
N-channel; see Figure 17 1- 2.8V
IDSS drain leakage current VDS =-24V; V
GS =0V; T
j=25°C;
P-channel - - -100 nA
VDS =24V; V
GS =0V; T
j=25°C;
N-channel - - 100 nA
IGSS gate leakage current VGS =20V; V
DS =0V; T
j=25°C;
N-channel - - 100 nA
VGS =20V; V
DS =0V; T
j=25°C;
P-channel - - 100 nA
VGS =-20V; V
DS =0V; T
j=25°C;
P-channel - - 100 nA
VGS =-20V; V
DS =0V; T
j=25°C;
N-channel - - 100 nA
RDSon drain-source on-state
resistance VGS =-10V; I
D=-1A; T
j=25°C;
P-channel; see Figure 16;
see Figure 19
- 0.22 0.25 Ω
VGS =10V; I
D= 2.2 A; Tj=25°C;
N-channel; see Figure 15;
see Figure 18
- 0.08 0.1 Ω
VGS =-4.5V; I
D=-0.5A; T
j=25°C;
P-channel; see Figure 16;
see Figure 19
- 0.33 0.4 Ω
VGS =4.5V; I
D= 1 A; N-channel;
see Figure 15; see Figure 18 - 0.11 0.2 Ω
IDSon on-state drain current VDS =5V; V
GS = 4.5 V; N-channel 2 - - A
VDS =-5V; V
GS = -4.5 V; P-channel -1 - - A
VDS =-1V; V
GS = -10 V; P-channel -2.3 - - A
VDS =1V; V
GS = 10 V; N-channel 3.5 - - A
Dynamic character i stics
QG(tot) total gate charge ID= 2.3 A; VDS =15V; V
GS =10V;
Tj= 25 °C; N-channel;
see Figure 11
- 1030nC
ID=-2.3A; V
DS =-15V;
VGS =-10V; T
j= 25 °C; P-channel;
see Figure 12
- 1025nC
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 7 of 16
Nexperia PHC21025
Complementary intermediate level FET
QGS gate-source charge ID= 2.3 A; VDS =15V; V
GS =10V;
Tj= 25 °C; N-channel;
see Figure 11
-1-nC
ID=-2.3A; V
DS =-15V;
VGS =-10V; T
j= 25 °C; P-channel;
see Figure 12
-1-nC
QGD gate-drain charge ID=-2.3A; V
DS =-15V;
VGS =-10V; T
j= 25 °C; P-channel;
see Figure 12
-3-nC
ID= 2.3 A; VDS =15V; V
GS =10V;
Tj= 25 °C; N-channel;
see Figure 11
-2.5-nC
Ciss input capacitance VDS =20V; V
GS =0V; f=1MHz;
Tj= 25 °C; N-channel; see Figure 5 - 250 - pF
VDS =-20V; V
GS = 0 V; f = 1 MHz;
Tj= 25 °C; P-channel; see Figure 6 - 250 - pF
Coss output capacitance VDS =20V; V
GS =0V; f=1MHz;
Tj= 25 °C; N-channel; see Figure 5 - 140 - pF
VDS =-20V; V
GS = 0 V; f = 1 MHz;
Tj= 25 °C; P-channel; see Figure 6 - 140 - pF
Crss reverse transfer capacitance VDS =20V; V
GS =0V; f=1MHz;
Tj= 25 °C; N-channel; see Figure 5 -50-pF
VDS =-20V; V
GS = 0 V; f = 1 MHz;
Tj= 25 °C; P-channel; see Figure 6 -50-pF
gfs transfer conductance VDS =-20V; I
D=-1A; T
j=25°C;
P-channel 12- S
VDS =20V; I
D=2.2A; T
j=25°C;
N-channel 24.5- S
toff turn-off time VDS =20V; V
GS =10V;
RG(ext) =4.7Ω; ID=1A; R
L=20Ω;
Tj= 25 °C; N-channel
- 25 140 ns
VDS =-20V; V
GS =-10V;
RG(ext) =4.7Ω; ID=-1A; R
L=20Ω;
Tj= 25 °C; P-channel
- 50 140 ns
ton turn-on time - 20 80 ns
VDS =20V; V
GS =10V;
RG(ext) =4.7Ω; ID=1A; R
L=20Ω;
Tj= 25 °C; N-channel
- 1540ns
Source-drain diode
VSD source-drain voltage IS=1.25A; V
GS =0V; T
j=25°C;
N-channel; see Figure 13 --1.2V
IS= -1.25 A; VGS =0V; T
j=25°C;
P-channel; see Figure 14 ---1.6V
trr reverse recovery time IS= -1.25 A; dIS/dt = 100 A/µs;
VGS =0V; V
DS =-25V; T
j=25°C;
P-channel
- 150 200 ns
IS=1.25A; dI
S/dt = -100 A/µs;
VGS =0V; V
DS =25V; T
j=25°C;
N-channel
- 35 100 ns
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 8 of 16
Nexperia PHC21025
Complementary intermediate level FET
Fig 5. Capacitance as a function of drain-source
voltage; N-channel; typical values Fig 6. Capacitance as a function of drain-sour ce
voltage; P-channel; typical values
Fig 7. Output characte ristics: drain current as a
function of drain-source volta ge ; N-channel;
typical values
Fig 8. Output characteristics: drain curren t as a
function of drain-so urc e vo lta g e; P-c ha nn e l;
typical values
0
600
400
200
0
10 20 30
mbe137
C
(pF)
VDS (V)
Ciss
Coss
Crss
0
600
400
200
0
−10 −20 −30
mbe144
C
(pF)
VDS (V)
Ciss
Coss
Crss
0 2 10 12
16
12
4
0
8
mbe142
468
VDS (V)
ID
(A)
5 V
4 V
3 V
VGS =
10 V
4.5 V
3.5 V
6 V
0−2−10 −12
−10
−8
−6
−2
0
−4
mbe154
−4−6−8
VDS (V)
ID
(A)
−7.5 V −6 V
−5 V
−4.5 V
−4 V
−3.5 V
−3 V
−2.5 V
VGS =
−10 V
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 9 of 16
Nexperia PHC21025
Complementary intermediate level FET
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; N-channel;
typical values
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; P-channel;
typical values
Fig 11. Gate-source voltage as a function of gate
charge; N- channel; typi ca l v alues Fig 12. Gate-source voltage as a function of gate
charge; P-channel; typical values
024 8
16
12
4
0
8
mbe141
6
ID
(A)
VGS (V) 0−2−4−8
−10
−8
−6
−2
0
−4
mbe157
−6
ID
(A)
VGS (V)
024 8
10
0
8
mbe136
6
6
4
2
QG (nC)
VGS
(V)
0−2−4−10−8
−10
0
−8
mbe145
−6
−6
−4
−2
Qg (nC)
VGS
(V)
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 10 of 16
Nexperia PHC21025
Complementary intermediate level FET
VGD = 0.
(1) Tj = 150 °C.
(2) Tj = 25 °C.
(3) Tj = -55 °C.
VGD = 0.
(1) Tj = 150 °C.
(2) Tj = 25 °C.
(3) Tj = -55 °C.
Fig 13. Source current as a function of source-d ra in
voltage; N-channel; typical values Fig 14. Source current as a function of source-drain
voltage; P-channel; typical values
VDS ≥ ID x RDSon; Tj = 25 °C.
(1) ID = 0.1 A.
(2) ID = 0.5 A.
(3) ID = 1 A.
(4) ID = 2.2 A.
(5) ID = 3.5 A.
(6) ID = 7 A.
-VDS ≥ -ID x RDSon; Tj = 25 °C.
(1) ID = -0.1 A.
(2) ID = -0.5 A.
(3) ID = -1 A.
(4) ID = -2.3 A.
(5) ID= -4.5 A.
Fig 15. Drain-source on-state resistance as a function
of drain current; N-channel; typical values Fig 16. Drain-source on-state resistance as a function
of drain current; typical values
0 0.5 1 1.5
6
2
0
4
mbe159
IS
(A)
VSD (V)
(1) (2) (3)
0−0.5 −1−2−1.5
−6
−2
0
−4
mbe158
IS
(A)
VSD (V)
(1) (2) (3)
100
(1)(2) (6)
VGS (V)
RDSon
(mΩ)
2468
104
103
102
10
mda217
(3)(4)(5)
−100
VGS (V)
RDSon
(mΩ)
−2−4−6−8
104
103
102
mda165
(1) (4) (5)
(2)(3)
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 11 of 16
Nexperia PHC21025
Complementary intermediate level FET
Typical VGSth at ID = 1 mA; VDS = VGS = VGSth.Typical RDSon at:
(1) ID = 2.2 A; VGS = 10 V.
(2) ID = 1 A; VGS = 4.5 V.
Fig 17. Tempe ra ture coefficient of gate-source
threshold voltage Fig 18. Temperature coefficient of drain-source
on-state resistance; N-channel
Typical RDSon at:
(1) ID = -1 A; VGS = -10 V.
(2) ID = -0.5 A; VGS = -4.5 V.
Fig 19. Temperature coefficient of drain-source on-state resistance; P-channel
0.6
0.7
0.8
0.9
1.0
1.2
1.1
0 50 100 150−50
k
Tj (°C)
mbe138
0.6
0.8
1.0
1.2
1.4
1.8
1.6
0 50 100 150−50
k
mbe139
(1)
(2)
Tj (°C)
0.6
0.8
1.0
1.2
1.4
1.8
1.6
0 50 100 150−50
k
Tj (°C)
mbe146
(1)
(2)
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 12 of 16
Nexperia PHC21025
Complementary intermediate level FET
7. Package outline
Fig 20. Package outline SOT96-1 (SO8)
UNIT A
max. A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10
1.45
1.25 0.25 0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8 1.27 6.2
5.8 1.05 0.7
0.6
0.7
0.3 8
0
o
o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
1.0
0.4
SOT96-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
4
5
pin 1 index
1
8
y
076E03 MS-012
0.069 0.010
0.004
0.057
0.049 0.01 0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15 0.05 0.244
0.228
0.028
0.024
0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
S
O8: plastic small outline package; 8 leads; body width 3.9 mm SOT96
-1
99-12-27
03-02-18
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PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 13 of 16
Nexperia PHC21025
Complementary intermediate level FET
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PHC21025 v.4 20110317 Product data sheet - PHC21025 v.3
Modifications: •Various changes to content.
PHC21025 v.3 20101217 Product data sheet - PHC21025 v.2
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 14 of 16
Nexperia PHC21025
Complementary intermediate level FET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in t his document ma y have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict wit h the short data sheet, th e
full data sheet shall pre va il.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this d ocument is be lieved to
be accurate and reliable. However, Nexperia does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applicati ons or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with t heir
applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo mer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contai ns data from the objective specification for product development.
Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
© Nexperia B.V. 2017. All rights reserved
PHC21025 All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 04 — 17 March 2011 15 of 16
Nexperia PHC21025
Complementary intermediate level FET
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document ma y be interpret ed or
construed as an of fer to se ll product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, p atents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) d escribed herein may
be subject to export control regulat i ons. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for aut omotive use. It i s neither qua lified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in au tomotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product cl aims resulting from custome r design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
9.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Nexperia PHC21025
Complementary intermediate level FET
11. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
10 Contact information. . . . . . . . . . . . . . . . . . . . . .15
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
17 March 2011
