2SA1160B(F) - TOSHIBA

2SK2992

2009-09-29

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2992

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

z Low drain−source ON resistance : RDS (ON) = 2.2 Ω (typ.)

z High forward transfer admittance : |Yfs| = 0.9 S (typ.)

z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)

z Enhancement mode : Vth = 2.0 to 3.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain−source voltage VDSS 200 V

Drain−gate voltage (RGS = 20 kΩ) VDGR 200 V

Gate−source voltage VGSS ±20 V

DC (Note 1) ID 1 A

Drain current

Pulse (Note 1) IDP 3 A

Drain power dissipation PD 0.5 W

Drain power dissipation (Note 2) PD 1.5 W

Single pulse avalanche energy

(Note 3)

EAS 36 mJ

Avalanche current IAR 1 A

Repetitive avalanche energy (Note 4) EAR 0.05 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 3: VDD = 50 V, Tch = 25°C (initial), L = 56.7 mH, RG = 25 Ω, IAR = 1 A

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC ―

JEITA SC-62

TOSHIBA 2-5K1B

Weight: 0.05 g (typ.)

2SK2992

2009-09-29

Marking

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA

Drain cut−off current IDSS VDS = 200 V, VGS = 0 V — — 100 μA

Drain−source breakdown

voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 — — V

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 3.5 V

Drain−source ON resistance RDS (ON) V

GS = 10 V, ID = 0.5 A — 2.2 3.5 Ω

Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.5 A 0.5 0.9 — S

Input capacitance Ciss — 90 —

Reverse transfer capacitance Crss — 10 —

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

— 30 —

Rise time tr — 9 —

Turn−on time ton — 17 —

Fall time tf — 16 —

Switching time

Turn−off time toff — 45 —

Total gate charge (gate−source

plus gate−drain) Qg — 3.0 —

Gate−source charge Qgs — 1.8 —

Gate−drain (“miller”) charge Qgd

VDD ≈ 160 V, VGS = 10 V, ID = 1 A

— 1.2 —

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

IDR — — — 1 A

Pulse drain reverse current

(Note 1)

IDRP — — — 3 A

Forward voltage (diode) VDSF I

DR = 1 A, VGS = 0 V — — −1.5 V

Reverse recovery time trr — 85 — ns

Reverse recovery charge Qrr

IDR = 1 A, VGS = 0 V, dIDR / dt = 100 A / μs

— 190 — nC

Note 5: A line to the right of a Lot No. identifies the indication of

product Labels.

Without a line: [[Pb]]/INCLUDES > MCV

With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

Z D

Part No.

(or abbreviation code)

Lot No.

Note 5

2SK2992

2009-09-29

2SK2992

2009-09-29

2SK2992

2009-09-29

⎟

⎠

⎞

⎜

⎝

⎛

−

⋅⋅⋅=

DDVDSS

VDSS

AS VB

RG = 25 Ω

DD = 50 V, L = 56.7 mH

2SK2992

2009-09-29

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the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA

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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.