POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IFRMS = 2x 450 A
IFAVM = 2x 270 A
VRRM = 800-1800 V
Features
●Direct copper bonded Al2O3 -ceramic
base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered, E 148688
Applications
●Supplies for DC power equipment
●DC supply for PWM inverter
●Field supply for DC motors
●Battery DC power supplies
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
●Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
VRSM VRRM Type
VV
900 800 PSKD 255/08
1300 1200 PSKD 255/12
1500 1400 PSKD 255/14
1700 1600 PSKD 255/16
1900 1800 PSKD 255/18
312
Diode Modules
Preliminary Data Sheet
PSKD 255
Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 450 A
IFAVM TC = 100°C; 180° sine 270 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz) 9500 A
VR = 0 t = 8.3 ms (60 Hz) 10200 A
TVJ = TVJM t = 10 ms (50 Hz) 8400 A
VR = 0 t = 8.3 ms (60 Hz) 9000 A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz) 451 000 A2s
VR = 0 t = 8.3 ms (60 Hz) 437 000 A2s
TVJ = TVJM t = 10 ms (50 Hz) 353 000 A2s
VR = 0 t = 8.3 ms (60 Hz) 340 000 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
Weight Typical including screws 750 g
Symbol Test Conditions Characteristic Values
IRRM TVJ = TVJM; VR = VRRM 30 mA
VFIF = 600 A; TVJ = 25°C 1.4 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 0.6 m Ω
RthJC per diode; DC current 0.140 K/W
per module other values 0.07 K/W
RthJK per diode; DC current see PSKT 255 0.18 K/W
per module 0.09 K/W
QSTVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs 700 µC
IRM 260 A
dSCreeping distance on surface 12.7 m m
dACreepage distance in air 9.6 m m
aMaximum allowable acceleration 50 m/s2
M8x20
1
3
2
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
0 25 50 75 100 125 150
0 100 200 300 400
0
100
200
300
400
500
0 25 50 75 100 125 150
110
105
106
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
0 100 200 300 400 500
0
250
500
750
1000
1250
1500
I2t
IFAVM
IdAVM
A
Ptot
W
TA
TC
s
t
ms
t
A2s
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
IFSM A
A
°C
IFAVM
W
Ptot
A°C
0.8
1.2
0.2
0.3
0.4
0.6
RthKA K/W
0.1
0.15
0.08
0.06
°C
2 x MDD255
Circuit
B2U
TA
RthKA K/W
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
VR = 0V
80 % VRRM
TVJ = 45°C
TVJ = 150°C
50 Hz
TVJ = 150°C
TVJ = 45°C
RL
0.5
0.1
0.2
0.3
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
Circuit
B 2 U
2 x PSKD 255
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
t
ZthJK
s
t
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
0.30
K/W
ZthJC
IdAVM
Ptot
0 25 50 75 100 125 150
0 200 400 600 800
0
500
1000
1500
2000
2500
A
3 x MDD255
Circuit
B6U
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
DC
DC
180°
120°
60°
30°
°C
TA
W
K/W
s
30°
60°
120°
180°
0.3
0.2
0.15
0.1
0.06
0.03
0.4
RthKA K/W
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 7 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.139
180° 0.148
120° 0.156
60° 0.176
30° 0.214
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0066 0.00054
2 0.0358 0.098
3 0.0831 0.54
4 0.0129 12
Fig. 8 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.179
180° 0.188
120° 0.196
60° 0.216
30° 0.254
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0066 0.00054
2 0.0358 0.098
3 0.0831 0.54
4 0.0129 12
5 0.04 12
Circuit
B 6 U
3 x PSKD 255
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