0.022(0.559)
0.016(0.406) 0.016(0.406)
0.022(0.559)
0.131(3.327)
0.145(3.683)
SOLDERABLE ENDS
1st BAND
2nd BAND
(1.676)
( 1. 524 )
0.066
0. 060
D1=
D2=D1 0.008(0.20)
0
D2
FEATURES
For general pur pose applications
This diod e features ver y low tur n- on voltage
and fast swit c hing. These devices are protected
M ECHANI CAL DAT A
Case:JEDEC mini-melf,glass case
Weight: Approx.0.031 grams
Symbols
Min. UNITS
30.0 V
V
V
V
V
VA
pF
ns
/W
0.4
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
0.5
Thermal resistance junction to ambient
CJ
0.32
Pulse test tp< 300 s, <2%
@ IF=0.1mA
@ IF=1mA
S torage temperature range
TSTG
Reverse breakdown voltage
Symbols
VR
0.24
@ IF=10mA
@ IF=30mA
IR
BAS85
by a PN junction guard ring against ex cessiv e
SMALL SIGNAL SCHOTTKY DIODES VOLTAGE RANGE: 30 V
CURRENT: 0.2 A
Mini-melf
GAL AXY ELECT RICAL
voltage, such as electrostatic discharges
Pow er dissipation @ TA=65
UNITS
c-55 ---+ 125
Polar ity: Color band denotes cathode end
ABS OLUTE RATINGS
VR
IF
IFM
IFSM
Ptot
TJ
TA
600 1)
125
V
mA
mA
30.0
200 1)
300 1)
mA
mW
Max.Typ.
c-55 ---+ 150
EL ECTRICAL CHARACTERI ST ICS
Junction temperature
Ambient operating temperature range
RθJA
@ IF=100mA
Leakage current VR=25V
Junction capacitance at VR=1V,f=1MHz
Reverse recovery time @ IF=10mA,IR=10mA,IR=1mA
VF
Forward voltage
2.0
10
trr 5
4301)
Value
200 1)
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Continuous reverse voltage
Forw ard continuous current @ TA=25
Peak forw ard current @ TA=25
Surge forw ard current @ tp<1s,TA=25
0.8
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BL
Document Number 0265016
1.
BLGALAXY ELECTRICAL
0100 200
100
200
0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
1000
TJ=-40
TJ=125
TJ=25
0 5 10 15 20 25 30
0.01
0.1
1
10
100
1000
TJ=125
100
75
50
25
05 1015 202530
2
4
6
8
10
12
14
VF - Forward Voltage ( V )
TA - Ambient temperature()
VR - Reverse voltage ( V )
FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS
Ptot-Power
(
mW
)
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
VR - Reverse voltage ( V )
Junction capacitance ( pF )
Forward current
(
mA
)
Reverse leaka
g
e current
(
A
)
BAS85
FIG.1 -- ADMISSIBLE POWER DISSIPATION VS. AMBIENT
TEMPERATURE
FIG. 2--TYPICAL INSTANTANEOUS FORWORD
CHARACTERISTICS
RATINGS AND CHARACTERISTIC CURVES
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2.
Document Number 0265016 BLGALAXY ELECTRICAL