IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE(sat) typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25C to 150C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings 600 V VCGR TJ = 25C to 150C; RGE = 20 kW 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 32 A IC90 TC = 90C 20 A ICM TC = 90C, tp =1 ms 40 A RBSOA VGE = 15 V, TJ = 125C, RG = 22 W Clamped inductive load, L = 30 H ICM = 60 VCEK < VCES A tSC (SCSOA) VGE = 15 V, VCE = 600 V, TJ = 125C RG = 22 W, non repetitive 10 s PC TC = 25C G = Gate, C = Collector , Features NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages IGBT Diode E = Emitter TAB = Collector 140 50 W W TJ -55 ... +150 C Tstg -40 ... +150 C 300 C Space savings High power density Typical Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 0.4 - 0.6 Weight Nm 2 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC ICES VCE = VCES VCE = 0 V, VGE = 20 V VCE(sat) IC 600 V 3 TJ = 25C TJ = 125C 5 0.7 V 0.1 mA mA 500 nA 2.2 2.8 V 232 = 20 A, VGE = 15 V g Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. = 0.4 mA, VCE = VGE IGES AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies (c) 2002 IXYS All rights reserved 1-4 http://store.iiic.cc/ IXDP 20N60 B IXDP 20N60 BD1 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Cies 800 pF 85 pF 50 pF 70 nC td(on) 25 ns tr 30 ns 260 ns Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg td(off) tf IC = 20 A, VGE = 15 V, VCE = 480 V Inductive load, TJ = 125C IC = 20 A, VGE = 15 V, VCE = 300 V, RG = 22 W 55 ns Eon 0.9 mJ Eoff 0.4 mJ RthJC RthCH Package with heatsink compound Reverse Diode (FRED) [D1 version only] 0.9 K/W K/W 0.5 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V, TJ = 125C IF TC = 25C TC = 90C IRM IF = 10 A, -diF/dt = 400 A/s, VR = 300 V 11 A t rr VGE = 0 V, TJ = 125C 80 ns trr IF = 1 A, -diF/dt = 100 A/s, VR = 30 V, VGE = 0 V 40 ns 2.1 1.6 RthJC 2.4 V V 25 15 A A TO-220 AB Outline Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 2.5 K/W (c) 2002 IXYS All rights reserved 2-4 http://store.iiic.cc/ IXDP 20N60 B IXDP 20N60 BD1 40 40 VGE= 17V 15V 13V A IC 11V 9V IC 30 20 10 10 1 2 3 V 4 9V TJ = 125C TJ = 25C 0 11V 30 20 0 VGE= 17V 15V 13V A 0 0 5 1 2 3 VCE Fig. 1 Typ. output characteristics IC V 4 5 VCE Fig. 2 Typ. output characteristics 40 40 A A 30 IF 30 20 20 TJ = 125C TJ = 25C 10 10 TJ = 125C TJ = 25C VCE = 20V 0 3 4 5 6 7 8 0 0 9 V 10 1 VGE Fig. 3 Typ. transfer characteristics 2 VF V 3 Fig. 4 Typ. forward characteristics of free wheeling diode 120 30 15 IRM trr V A 25 12 ns trr IRM VGE 80 20 9 15 6 40 10 VCE = 480V IC = 15A 3 TJ = 125C VR = 300V IF = 10A 5 IXDP20N06B 0 0 0 20 40 60 80 nC 100 QG Fig. 5 Typ. turn on gate charge 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2002 IXYS All rights reserved 3-4 http://store.iiic.cc/ IXDP 20N60 B IXDP 20N60 BD1 1.5 mJ Eon 75 Eon VCE = 300V VGE = 15V ns RG = 22W TJ = 125C 1.0 50 t td(on) 400 mJ ns Eoff 0.6 10 30 A 20 IC Fig. 7 Typ. turn on energy and switching times versus collector current 1.2 Fig. 8 Typ. turn off energy and switching times versus collector current 1.00 40 ns mJ 30 td(on) Eon tr 0.8 VCE = 300V VGE = 15V IC = 20A TJ = 125C 0.6 0.4 0 10 20 30 40 50 60 mJ t 0.75 Eoff 20 0.50 10 0.25 0 70 W 800 VCE = 300V VGE = 15V IC = 20A TJ = 125C td(off) Eoff ICM t 400 200 tf 0.00 0 10 20 30 40 50 60 0 W 70 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 5 RG = 22W TJ = 125C A ns 600 RG 80 100 0 0 IC Eon 1.0 RG = 22W TJ = 125C tf 0.0 0 30 A 20 200 VCE = 300V VGE = 15V 25 0.0 10 t Eoff 0.2 0 300 td(off) 0.4 tr 0.5 0.8 diode K/W 1 60 IGBT ZthJC 0.1 40 0.01 20 single pulse 0 0 100 200 300 400 500 600 700 V VCE Fig. 11 Reverse biased safe operating area RBSOA (c) 2002 IXYS All rights reserved 0.001 10-5 IXDP20N06B 10-4 10-3 10-2 10-1 100 s 101 t Fig. 12 Typ. transient thermal impedance 4-4 http://store.iiic.cc/