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MJD44H11 — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. 1.2 1
April 2015
MJD44H11
NPN Epitaxial Silicon Transistor
Features
• General-Purpose Power and Switching such as
Output or Driver Stages in Applications
• D-PAK for Surface-Mount Applications
• Lead-Formed for Surface Mount Application (No Suffix)
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
MJD44H11TF MJD44H11 TO-252 3L (DPAK) Tape and Reel
MJD44H11TM MJD44H11 TO-252 3L (DPAK) Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 8 A
ICP Collector Current (Pulse) 16 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range - 65 to +150 °C
1.Base 2.Collector 3.Emitter
D-PAK
1
MJD44H11 — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. 1.2 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Max. Unit
PDTotal Device Dissipation TC = 25°C 20 W
TA = 25°C 1.75
RθJC Thermal Resistance, Junction-to-Case 6.25 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 71.4 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
VCEO(sus) Collector-Emitter Sustaining Voltage(1) IC = 30 mA, IB = 0 8 0 V
ICEO Collector Cut-Off Current VCE = 80 V, IB = 0 10 μA
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 50 μA
hFE DC Current Gain(1) VCE = 1 V, IC = 2 A 60
VCE = 1 V, IC = 4 A 40
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 8 A, IB = 0.4 A 1 V
VBE(sat) Base-Emitter Saturation Voltage(1) IC = 8 A, IB = 0.8 A 1.5 V
fTCurrent Gain Bandwidth Product VCE = 10 V, IC = 0.5 A 50 MHz
Cob Output Capa citance VCB = 10 V, f = 1 MHz 130 pF
tON Turn-On Time IC = 5 A,
IB1 = - IB2 = 0.5 A
300 ns
tSTG Storage Time 500 ns
tFFall Time 140 ns
MJD44H11 — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. 1.2 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Safe Operating Area
Figure 3. Power Derating
0.01 0.1 1 10
1
10
100
1000
VCE = 1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
5ms
100
μ
s
500
μ
s
1ms
DC
ICP(max)
IC(max)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
MJD44H11 — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD44H11 Rev. 1.2 4
Physical Dimensions
Figure 4. 3-LEAD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)
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© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I74
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