Underside View
Pin 1 – Emitter PAD 2 – Base PAD 3 – Collector
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
APPLICATIONS:
Intended for use in audio input stages, driver
stages and low noise input applications. The
TO-18 (TO-206AA)
MECHANICAL DATA
Dimensions in mm (inches)
BCY59
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@ semelab.co.uk Website: http://www.semelab.co.uk Document Number 5253
Issue 1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO Collector - Emitter Voltage (IB =0) 45V
VBEO Emitter - Base Voltage (IC =0) 7V
IC Collector Current 200mA
PTOT Total Power Dissipation @ Tamb ≤ 25°C 390mW
@ Tc ≤ 45°C 1W
TJ, TSTG Maximum Junction And Storage Temperature -55°C to 175°C
RθJC Thermal Resistance Junction to Case 150°C/W
RθJA Thermal Resistance Junction to Ambient 385°C/W
13 2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.33 (0.210)
4.32 (0.170)
12.7 (0.500)
min.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
GENERAL PURPOSE,
SMALL SIGNAL, NPN TRANSISTOR
BCY59
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@ semelab.co.uk Website: http://www.semelab.co.uk Document Number 5253
Issue 1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
V(BR)CEO* Collector-Emitter Breakdown Voltage IB=0 IC=2mA 45 V
V(BR)EBO Emitter-Base Breakdown Voltage IC=0 IE=10µA 7 V
ICES Collector Cut-off Current VCE=45V VBE=0V 0.1 10 nA
TC=150°C 0.1 10 µA
ICEX Collector Cut-off Current (TC=100°C) VCE=45V VBE= -0.2V 20 µA
IEBO Emitter Cut-off Current IC=0 VEB=5V 10 nA
VBE(sat) * Base-Emitter Saturation Voltage IC=10mA IB=0.25mA 600 700 850
IC=100mA IB=2.5mA 750 900 1200
mV
VCE(sat) * Base-Emitter Saturation Voltage IC=10mA IB=0.25mA 120 350
IC=100mA IB=2.5mA 400 700
mV
hFE DC Current Gain (BCY59A) IC=2mA VCE=5V 120 220
IC=10mA VCE=1V 80
IC=100mA VCE=1V 40
DC Current Gain (BCY59B) IC=10µA VCE=5V 20
IC=2mA VCE=5V 180 310
IC=10mA VCE=1V 120 400
IC=100mA VCE=1V 45
DC Current Gain (BCY59C) IC=10µA VCE=5V 40
IC=2mA VCE=5V 250 460
IC=10mA VCE=1V 160 630
IC=100mA VCE=1V 60
fT Transition Frequency (f=100MHz) IC=10mA VCE=5V 200 MHz
CCBO Collector-Base Capacitance (f=1MHz) IE=0 VCB=10V 3.5 6
CEBO Emitter-Base Capacitance (f=1MHz) IC=0 VEB=0.5V 11 15
pF
NF Noise Figure IC=200µA VCE=5V 2 6 dB
RS=2KΩ f=1kHz
ton Turn-on Tim e (VCC=10V) IC=10mA IB1=1mA 85 150
IC=100mA IB1=10mA 55 150
ns
toff Turn-off Time (VCC=10V) IC=10mA, IB1= IB2=1mA 480 800
IC=100mA, IB1= IB2=10mA 480 800
ns
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
* Pulsed: Pulse Duration = 300µs, duty cycle = 1.5%
