TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88403 www.vishay.com
03-May-02 1
Surface Mount TRANSZORB®
T ransient Voltage Suppressors
Breakdown Voltage 6.8 to 200V
Peak Pulse Power 400W
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak pulse power dissipation with a PPPM Minimum 400 W
10/1000µs wavefor m(1)(Fig. 1)
Steady state power dissipation at TL = 75°C(2) PM(AV) 1.0 W
Peak pulse current with a 10/1000µs waveform(1)(Fig. 3) IPPM See Next Table A
Peak forward surge current, 8.3 ms single half sine-wave IFSM 40 A
unidirectional only(3)
Maximum instantaneous forward voltage at 25A for VF3.5 V
unidirectional only
Operating junction and storage temperature range TJ, TSTG – 55 to +150 °C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2. Rating is 200W above 91V.
(2) Mounted on copper pads to each terminal of 0.31 in2(8.0 mm2) per Fig. 5
(3) Measured at 8.3ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
SOLDERABLE ENDS
1st BAND
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
D1=
0.105
0.095
(2.67)
(2.41)
D2 = D1
+ 0
- 0.008 (0.20)
1st band denotes type and positive end (cathode)
D2
0.022 (0.56)
0.018 (0.46)
Dimensions in inches
and (millimeters)
DO-213AB (GL41)
Features
• Plastic package has Underwriters Laboratory
Flammability Classificaion 94V-0
• For surface mounted applications
• Glass passivated junction
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• 400W peak pulse capability with a 10/1000µs wavefor m,
repetition rate (duty cycle): 0.01% (200W above 91V)
• For devices with V(BR)≥10V, ID are typically less
than 1.0µA
• High temperature soldering guaranteed: 250°C/10
seconds at terminals
• Available in unidirectional only
Mechanical Data
Case: JEDEC DO-213AB molded plastic body over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity: Blue bands denotes the cathode which is
positive with respect to the anode under normal TVS
operation
Mounting Position: Any
Weight: 0.0046 oz., 0.166 g
Packaging codes/options:
26/5K per 13" Reel (12mm tape), 60K/box
46/1.5K per 7" Reel (12mm tape), 30K/box
Mounting Pad Layout
0.157 (4.00)
0.118 (3.00) MIN
MAX
0.256 (6.50)
REF
0.049 (1.25) MIN
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88403
203-May-02
Electrical Characteristics(TA= 25°C unless otherwise noted)
Breakdown Voltage Maximum Reverse Maximum Maximum Maximum
VBR (V)(1) Test Current Stand-off Voltage Leakage at Peak Pulse Clamping Voltage Temperature
at ITVWM VWM ID (µA) Current IPPM at IPPM Coefficient
Device Type Min Max (mA) (V) (A)(2) VC(V) of VBR (% / °C)
TGL41-6.8 6.12 7.48 10 5.50 1000 37.0 10.8 0.060
TGL41-6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.060
TGL41-7.5 6.75 8.25 10 6.05 500 34.2 11.7 0.064
TGL41-7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.064
TGL41-8.2 7.38 9.02 10 6.63 200 32.0 12.5 0.068
TGL41-8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.068
TGL41-9.1 8.19 10.0 1.0 7.37 50.0 29.0 13.8 0.071
TGL41-9.1A 8.65 9.55 1.0 7.78 50.0 29.9 13.4 0.071
TGL41 -10 9.00 11.0 1.0 8.10 10.0 26.7 15.0 0.076
TGL41 -10A 9.50 10.5 1.0 8.55 10.0 27.6 14.5 0.076
TGL41 -11 9.90 12.1 1.0 8.92 5.0 24.7 16.2 0.078
TGL41 -11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.078
TGL41-12 10.8 13.2 1.0 9.72 5.0 23.1 17.3 0.081
TGL41-12A 11.4 12.6 1.0 10.2 5.0 24.0 16.7 0.081
TGL41-13 11.7 14.3 1.0 10.5 5.0 21.1 19.0 0.084
TGL41-13A 12.4 13.7 1.0 11.1 5.0 22.0 18.2 0.084
TGL41-15 13.5 16.5 1.0 12.1 5.0 18.2 22.0 0.087
TGL41-15A 14.3 15.8 1.0 12.8 5.0 18.9 21.2 0.087
TGL41-16 14.4 17.6 1.0 12.9 5.0 17.0 23.5 0.089
TGL41-16A 15.2 16.8 1.0 13.6 5.0 17.8 22.5 0.089
TGL41-18 16.2 19.8 1.0 14.5 5.0 15.1 26.5 0.091
TGL41-18A 17.1 18.9 1.0 15.3 5.0 15.9 25.2 0.091
TGL41-20 18.0 22.0 1.0 16.2 5.0 13.7 29.1 0.093
TGL41-20A 19.0 21.0 1.0 17.1 5.0 14.4 27.7 0.093
TGL41-22 19.8 24.2 1.0 17.8 5.0 12.5 31.9 0.095
TGL41-22A 20.9 23.1 1.0 18.8 5.0 13.1 30.6 0.095
TGL41-24 21.6 26.4 1.0 19.4 5.0 11.5 34.7 0.097
TGL41-24A 22.8 25.2 1.0 20.5 5.0 12.0 33.2 0.097
TGL41-27 24.3 29.7 1.0 21.8 5.0 10.2 39.1 0.099
TGL41-27A 25.7 28.4 1.0 23.1 5.0 10.7 37.5 0.099
TGL41-30 27.0 33.0 1.0 24.3 5.0 9.2 43.5 0.100
TGL41-30A 28.5 31.5 1.0 25.6 5.0 9.7 41.4 0.100
TGL41-33 29.7 36.3 1.0 26.8 5.0 8.4 47.7 0.101
TGL41-33A 31.4 34.7 1.0 28.2 5.0 8.8 45.7 0.101
TGL41-36 32.4 39.6 1.0 29.1 5.0 7.7 52.0 0.102
TGL41-36A 34.2 37.8 1.0 30.8 5.0 8.0 49.9 0.102
TGL41-39 35.1 42.9 1.0 31.6 5.0 7.1 56.4 0.103
TGL41-39A 37.1 41.0 1.0 33.3 5.0 7.4 53.9 0.103
TGL41-43 38.7 47.3 1.0 34.8 5.0 6.5 61.9 0.104
TGL41-43A 40.9 45.2 1.0 36.8 5.0 6.7 59.3 0.104
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88403 www.vishay.com
03-May-02 3
Electrical Characteristics(TA= 25°C unless otherwise noted)
Breakdown Voltage Maximum Reverse Maximum Maximum Maximum
VBR (V)(1) Test Current Stand-off Voltage Leakage at Peak Pulse Clamping Voltage Temperature
at ITVWM VWM ID (µA) Current IPPM at IPPM Coefficient
Device Type Min Max (mA) (V) (A)(2) VC(V) of VBR (% / °C)
TGL41-47 42.3 51.7 1.0 38.1 5.0 5.9 67.8 0.104
TGL41-47A 44.7 49.4 1.0 40.2 5.0 6.2 64.8 0.104
TGL41-51 45.9 56.1 1.0 41.3 5.0 5.4 73.5 0.105
TGL41-51A 48.5 53.6 1.0 43.6 5.0 5.7 70.1 0.105
TGL41-56 50.4 61.6 1.0 45.4 5.0 5.0 80.5 0.106
TGL41-56A 53.2 58.8 1.0 47.8 5.0 5.2 77.0 0.106
TGL41-62 55.8 68.2 1.0 50.2 5.0 4.5 89.0 0.107
TGL41-62A 58.9 65.1 1.0 53.0 5.0 4.7 85.0 0.107
TGL41-68 61.2 74.8 1.0 55.1 5.0 4.1 98.0 0.107
TGL41-68A 64.6 71.4 1.0 58.1 5.0 4.3 92.0 0.107
TGL41-75 67.5 82.5 1.0 60.7 5.0 3.7 108 0.108
TGL41-75A 71.3 78.8 1.0 64.1 5.0 3.9 103 0.108
TGL41-82 73.8 90.2 1.0 66.4 5.0 3.4 118 0.108
TGL41-82A 77.9 86.1 1.0 70.1 5.0 3.5 113 0.108
TGL41-91 81.9 100.0 1.0 73.7 5.0 3.1 131 0.109
TGL41-91A 86.5 95.50 1.0 77.8 5.0 3.2 125 0.109
TGL41-100 90.0 110.0 1.0 81.0 5.0 1.39 144 0.109
TGL41-100A 95.0 105.0 1.0 85.5 5.0 1.46 137 0.109
TGL41-110 99.0 121.0 1.0 89.2 5.0 1.27 158 0.110
TGL41-110A 105.0 116.0 1.0 94.0 5.0 1.32 152 0.110
TGL41-120 108.0 132.0 1.0 97.2 5.0 1.16 173 0.110
TGL41-120A 114.0 126.0 1.0 102.0 5.0 1.21 165 0.110
TGL41-130 117.0 143.0 1.0 105.0 5.0 1.07 187 0.110
TGL41-130A 124.0 137.0 1.0 111.0 5.0 1.12 179 0.110
TGL41-150 135.0 165.0 1.0 121.0 5.0 0.93 215 0.111
TGL41-150A 143.0 158.0 1.0 128.0 5.0 0.97 207 0.111
TGL41-160 144.0 176.0 1.0 130.0 5.0 0.87 230 0.111
TGL41-160A 152.0 168.0 1.0 136.0 5.0 0.91 219 0.111
TGL41-170 153.0 187.0 1.0 138.0 5.0 0.82 244 0.111
TGL41-170A 162.0 179.0 1.0 145.0 5.0 0.85 234 0.111
TGL41-180 162.0 198.0 1.0 146.0 5.0 0.78 258 0.111
TGL41-180A 171.0 189.0 1.0 154.0 5.0 0.81 246 0.111
TGL41-200 180.0 220.0 1.0 162.0 5.0 0.70 287 0.111
TGL41-200A 190.0 210.0 1.0 171.0 5.0 0.73 274 0.111
Notes: (1) V(BR) measured after ITapplied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Figure 3 and derate per Fig.2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88403
403-May-02
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
025 50 75 100 125 150
0
25
50
100
75
110 100
0
20
40
10
30
50
0.1
1.0
10
100
1.0µs10µs100µs1.0ms10ms
0.1µs
1.0 10 100 200
10
100
1,000
10,000
050 100 150 200
0
0.25
0.50
0.75
1.00
25 75 125 175
Non-Repetitive
Pulse Waveform
shown in Fig. 3
TA = 25°C
TGL41-6.8 TGL91A
TGL41-100 TGL200A
td, Pulse Width, sec. TA, Ambient Temperature (°C)
V(BR), Breakdown Voltage (V)
Number of Cycles at 60 Hz
TL, Lead Temperature (°C)
PPPM, Peak Pulse Power (kW)
Peak Pulse Power (PPPM) or Current
(IPPM) derating in percentage (%)
PM(AV), Steady State Power
Dissipation (W)
CJ, Junction Capacitance (pF)
IFSM, Peak Forward Surge Current (A)
Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Derating Curve
Fig. 5 - Steady State Power
Derating Curve Fig. 6 - Maximum Non-Repetitive Peak Forward
Surge Current Unidirectional only
Fig. 4 - Typical Junction Capacitance
TJ = 25°C
f = 1.0 MHz
Vsq = 50MVpp Unidirectional
Measured at Zero Bias
Measured at Stand-off
Voltage, VWM
0.31 x 0.31 x 0.08" Copper pads
(8 x 8 x 2mm)
60 Hz Resistive or
Inductive Load 8.3ms single half sine-wave
(JEDEC method)
TJ = TJ max.
0
50
100
150
IPPM — Peak Pulse Current, % IRSM
Fig. 3 – Pulse Wa vef orm
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10µsec.
Peak Value
IPPM
Half Value — IPP
IPPM 2
td
10/1000µsec. Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t — Time (ms)
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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