BFG540,215 - NXP Semiconductors / Philips Semiconductors

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NXP Semiconductors

BFG540; BFG540/X; BFG540/XR

NPN 9 GHz wideband transistor

Rev. 05 — 21 November 2007 Product data sheet

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

FEATURES

•High power gain

•Low noise figure

•High transition frequency

•Gold metallization ensures

excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial

transistors, intended for wideband

applications in the GHz range, such

as analog and digital cellular

telephones, cordless telephones

(CT1, CT2, DECT, etc.), radar

detectors, satellite TV tuners (SATV),

MATV/CATV amplifiers and repeater

amplifiers in fibre-optical systems.

Thetransistorsaremountedinplastic

SOT143B and SOT143R packages.

PINNING

PIN DESCRIPTION

BFG540 (Fig.1) Code: %MG

1 collector

2 base

3 emitter

4 emitter

BFG540/X (Fig.1) Code: %MM

1 collector

2 emitter

3 base

4 emitter

BFG540/XR (Fig.2) Code: %MR

1 collector

2 emitter

3 base

4 emitter

Fig.1 SOT143B.

handbook, 2 columns

Top view

MSB014

Fig.2 SOT143R.

handbook, 2 columns

Top view

MSB035

Rev. 05 - 21 November 2007

2 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−20 V

VCES collector-emitter voltage RBE =0 −−15 V

ICDC collector current −−120 mA

Ptot total power dissipation Ts≤60 °C; note 1 −−400 mW

hFE DC current gain IC= 40 mA; VCE =8V; T

j=25°C 100 120 250

Cre feedback capacitance IC= 0; VCE = 8 V; f = 1 MHz −0.5 −pF

fTtransition frequency IC= 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25°C−9−GHz

GUM maximum unilateral power gain IC= 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25°C−18 −dB

IC= 40 mA; VCE = 8 V; f = 2 GHz;

Tamb =25°C−11 −dB

insertion power gain IC= 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25°C15 16 −dB

F noise ﬁgure Γs=Γopt; IC= 10 mA; VCE =8V;

f = 900 MHz; Tamb =25°C−1.3 1.8 dB

Γs=Γopt; IC= 40 mA; VCE =8V;

f = 900 MHz; Tamb =25°C−1.9 2.4 dB

Γs=Γopt; IC= 10 mA; VCE =8V;

f = 2 GHz; Tamb =25°C−2.1 −dB

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCES collector-emitter voltage RBE =0 −15 V

VEBO emitter-base voltage open collector −2.5 V

ICDC collector current −120 mA

Ptot total power dissipation Ts≤60 °C; note 1 −400 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts≤60 °C; note 1 290 K/W

s21 2

Rev. 05 - 21 November 2007

3 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero and

2. VCE = 8 V; IC= 40 mA; RL=50Ω; Tamb =25°C;

fp= 900 MHz; fq= 902 MHz;

measured at f(2p −q) = 898 MHz and f(2q −p) = 904 MHz.

3. dim =−60 dB (DIN 45004B); IC= 40 mA; VCE = 8 V; ZL=Z

S=75Ω; Tamb =25°C;

Vp=V

; Vq=V

O−6 dB; Vr=V

O−6 dB;

fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz;

measured at f(p+q−r) = 793.25 MHz.

4. IC= 40 mA; VCE = 8 V; VO= 275 mV; Tamb =25°C;

fp= 250 MHz; fq= 560 MHz; measured at f(p + q) = 810 MHz.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =8V −−50 nA

hFE DC current gain IC= 40 mA; VCE = 8 V 60 120 250

Ceemitter capacitance IC=i

c= 0; VEB = 0.5 V; f = 1 MHz −2−pF

Cccollector capacitance IE=i

e= 0; VCB =8V; f=1MHz −0.9 −pF

Cre feedback capacitance IC= 0; VCB = 8 V; f = 1 MHz −0.5 −pF

fTtransition frequency IC= 40 mA; VCE = 8 V; f = 1 GHz;

Tamb =25°C−9−GHz

GUM maximum unilateral power gain

(note 1) IC= 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25°C−18 −dB

IC= 40 mA; VCE = 8 V; f = 2 GHz;

Tamb =25°C−11 −dB

insertion power gain IC= 40 mA; VCE = 8 V; f = 900 MHz;

Tamb =25°C15 16 −dB

F noise ﬁgure Γs=Γopt; IC= 10 mA; VCE =8V;

f = 900 MHz; Tamb =25°C−1.3 1.8 dB

Γs=Γopt; IC= 40 mA; VCE =8V;

f = 900 MHz; Tamb =25°C−1.9 2.4 dB

Γs=Γopt; IC= 10 mA; VCE =8V;

f = 2 GHz; Tamb =25°C−2.1 −dB

PL1 output power at 1 dB gain

compression IC= 40 mA; VCE =8V; R

L=50Ω;

f = 900 MHz; Tamb =25°C−21 −dBm

ITO third order intercept point note 2 −34 −dBm

VOoutput voltage note 3 −500 −mV

d2second order intermodulation

distortion note 4 −−50 −dB

s21 2

GUM 10 s21 2

11 2

–()1s

22 2

–()

-------------------------------------------------------- dB.log=

Rev. 05 - 21 November 2007

4 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

Fig.3 Power derating curve.

handbook, halfpage

0 50 100 200

600

200

400

MBG249

150

Ptot

(mW)

Ts(oC)

VCE ≤10 V. Fig.4 DC current gain as a function of collector

current.

VCE = 8 V; Tj = 25 °C.

handbook, halfpage

250

100

150

200

MRA749

10−210−111010

IC (mA)

Fig.5 Feedback capacitance as a function of

collector-base voltage.

IC= 0; f = 1 MHz.

handbook, halfpage

(pF)

VCB (V)

812

0.8

0.6

0.4

0.2

MRA750

Fig.6 Transition frequency as a function of

collector current.

f = 1 GHz; Tamb =25°C.

handbook, halfpage

(GHz)

IC (mA)

MRA751

10−111010

CE = 8 V

VCE = 4 V

Rev. 05 - 21 November 2007

5 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

Fig.7 Gain as a function of collector current.

VCE = 8 V; f = 900 MHz.

MSG = maximum stable gain; Gmax = maximum available gain;

GUM = maximum unilateral power gain.

handbook, halfpage

020 I

(mA)

40 60

gain

(dB)

MRA752

GUM

Gmax

MSG

Fig.8 Gain as a function of collector current.

VCE = 8 V; f = 2 GHz.

Gmax = maximum available gain;

GUM = maximum unilateral power gain.

handbook, halfpage

020 I

(mA)

40 60

gain

(dB)

MRA753

GUM

Gmax

Fig.9 Gain as a function of frequency.

IC= 10 mA; VCE =8V.

UM = maximum unilateral power gain;

MSG = maximum stable gain; Gmax = maximum available gain.

handbook, halfpage

gain

(dB)

010

MRA754

102103104

f (MHz)

MSG

GUM

Gmax

Fig.10 Gain as a function of frequency.

handbook, halfpage

gain

(dB)

010

MRA755

102103104

f (MHz)

40 MSG

GUM

Gmax

IC= 40 mA; VCE =8V.

UM = maximum unilateral power gain;

MSG = maximum stable gain; Gmax = maximum available gain.

Rev. 05 - 21 November 2007

6 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

Fig.11 Intermodulation distortion as a function of

collector current.

handbook, halfpage

10 60

−20

−70

−60

−50

−40

−30

20 30 40

dim

(dB)

IC (mA)

MEA973

Fig.12 Second order intermodulation distortion as

a function of collector current.

handbook, halfpage

10 60

−20

−70

−60

−50

−40

−30

20 30 40

(dB)

IC (mA)

MEA972

Fig.13 Minimum noise figure and associated

available gain as functions of collector

current.

VCE =8V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

IC (mA)

MRA760

1102

2000 MHz

1000 MHz

2000 MHz

1000 MHz

f = 900 MHz

Gass

Fmin

900 MHz

500 MHz

Fig.14 Minimum noise figure and associated

available gain as functions of frequency.

VCE =8V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

f (MHz)

MRA761

102104

103

Gass

10 mA Fmin

40 mA

IC = 10 mA

Rev. 05 - 21 November 2007

7 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

Fig.15 Noise circle figure.

IC= 10 mA; VCE = 8 V; Zo=50Ω; f = 900 MHz.

handbook, full pagewidth

MRA762

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5

F = 1.5 dB

1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

F = 2 dB

F = 3 dB

Fmin = 1.3 dB

OPT

IC= 10 mA; VCE = 8 V; Zo=50Ω; f = 2 GHz.

Fig.16 Noise circle figure.

handbook, full pagewidth

MRA763

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

OPT

F = 2.5 dB

F = 3 dB

F = 4 dB

G = 10 dB

G = 9 dB

G = 8 dB

Gmax = 11.4 dB

Fmin = 2.1 dB

Rev. 05 - 21 November 2007

8 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

IC= 40 mA; VCE = 8 V; Zo=50Ω.

Fig.17 Common emitter input reflection coefficient (s11).

handbook, full pagewidth

MRA756

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5

3 GHz

1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

Fig.18 Common emitter forward transmission coefficient (s21).

IC= 40 mA; VCE =8V.

handbook, full pagewidth

MRA757

50 40 30 20 10

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

Rev. 05 - 21 November 2007

9 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

Fig.19 Common emitter reverse transmission coefficient (s12).

IC= 40 mA; VCE =8V.

handbook, full pagewidth

MRA758

0.25 0.20 0.15 0.10

3 GHz

0.05

180°

−90°

−135°−45°

0°

45°

90°

135°

40 MHz

Fig.20 Common emitter output reflection coefficient (s22).

handbook, full pagewidth

MRA759

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz

3 GHz

IC= 40 mA; VCE = 8 V; Zo=50Ω.

Rev. 05 - 21 November 2007

10 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

PACKAGE OUTLINES

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 1.1

0.9

max

0.1

0.88

0.78

0.15

0.09

3.0

2.8

1.4

1.2

HEywvQ

2.5

2.1 0.45

0.15 0.55

0.45

1.9

1.7

0.1 0.10.2

0.48

0.38

DIMENSIONS (mm are the original dimensions)

SOT143B 97-02-28

0 1 2 mm

scale

Plastic surface mounted package; 4 leads SOT143B

vMA

detail X

Rev. 05 - 21 November 2007

11 of 14

NXP Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFG540; BFG540/X;

BFG540/XR

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 1.1

0.9

max

0.1

0.88

0.78

0.15

0.09

3.0

2.8

1.4

1.2

HEywvQ

2.5

2.1 0.55

0.25 0.45

0.25

1.9

1.7

0.1 0.10.2

0.48

0.38

DIMENSIONS (mm are the original dimensions)

SOT143R SC-61B 97-03-10

99-09-13

0 1 2 mm

scale

Plastic surface mounted package; reverse pinning; 4 leads SOT143R

vMA

detail X

Rev. 05 - 21 November 2007

12 of 14

NXP Semiconductors BFG540; BFG540/X; BFG540/XR

NPN 9 GHz wideband transistor

Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

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General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

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information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

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authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

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Notice: All referenced brands, product names, service names and trademarks

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Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Rev. 05 - 21 November 2007

13 of 14

NXP Semiconductors BFG540; BFG540/X; BFG540/XR

NPN 9 GHz wideband transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 21 November 2007

Document identifier: BFG540_X_XR_N_5

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFG540_X_XR_N_5 20071121 Product data sheet - BFG540_X_XR_4

Modiﬁcations: •Pinning table on page 2; changed code

BFG540_X_XR_4

(9397 750 07059) 20000523 Product speciﬁcation - BFG540XR_3

BFG540XR_3

(9397 750 03144) 19950901 Product speciﬁcation - BFG540XR_2

BFG540XR_2 - Product speciﬁcation - BFG540XR_1

BFG540XR_1 - - - -