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IFRMS = 2x 450 A
IFAVM = 2x 290 A
VRRM = 800-1600 V
Symbol Test Conditions Characteristic Values
IRRM TVJ = TVJM; VR = VRRM 40 mA
VFIF = 600 A; TVJ = 25°C 1.3 V
VT0 For power-loss calculations only 0.75 V
rTTVJ = TVJM 0.75 mW
RthJC per diode; DC current 0.129 K/W
per module other values 0.065 K/W
RthJK per diode; DC current see Fig. 6/7 0.169 K/W
per module 0.0845 K/W
QSTVJ = 125°C, IF = 400 A; -di/dt = 50 A/ms 760 mC
IRM 275 A
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
VRSM VRRM Type
VV
900 800 MDD 250-08N1
1300 1200 MDD 250-12N1
1500 1400 MDD 250-14N1
1700 1600 MDD 250-16N1
Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 450 A
IFAVM TC = 100°C; 180° sine 290 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 11 000 A
VR = 0 t = 8.3 ms (60 Hz), sine 11 700 A
TVJ = TVJM t = 10 ms (50 Hz), sine 9000 A
VR = 0 t = 8.3 ms (60 Hz), sine 9600 A
òi2dt TVJ = 45°C t = 10 ms (50 Hz), sine 605 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 560 000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 405 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 380 000 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2.5-5/22-44 Nm/lb.in.
Terminal connection torque (M8) 12-15/106-132 Nm/lb.in.
Weight Typical including screws 320 g
MDD 250
High Power
Diode Modules
312
1
3
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Features
●Direct copper bonded Al2O3 -ceramic
base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered, E 72873
Applications
●Supplies for DC power equipment
●DC supply for PWM inverter
●Field supply for DC motors
●Battery DC power supplies
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
●Reduced protection circuits
Threaded spacer for higher Anode/Cathode
construction: Type ZY 250, material brass
14
Dimensions in mm (1 mm = 0.0394")
20 12
936
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MDD 250
Fig. 1 Surge overload current
IFSM: Crest value, t: duration Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
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Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
MDD 250
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.169
180°0.171
120°0.172
60°0.172
30°0.173
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0099
2 0.0165 0.168
3 0.1091 0.456
4 0.04 1.36
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.129
180°0.131
120°0.132
60°0.132
30°0.133
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.0099
2 0.0165 0.168
3 0.1091 0.456
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
ts
ZthJK
K/W
ts
ZthJC
K/W
30°
DC
0
0
30°
DC
838
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