VS-16CDH02-M3
www.vishay.com Vishay Semiconductors
Revision: 10-Feb-15 1Document Number: 95812
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 2 x 8 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, telecom, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
PRODUCT SUMMARY
Package TO-263AC (SMPD)
IF(AV) 2 x 8 A
VR200 V
VF at IF0.77 V
trr 27 ns
TJ max. 175 °C
Diode variation Dual die
Top View Bottom View
TO-263AC (SMPD)
K
1
2
K
Cathode Anode 2
Anode 1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current per device IF(AV) Tsolder pad = 155 °C 16
A
per diode 8
Non-repetitive peak surge current per device IFSM TJ = 25 °C, 6 ms square pulse 190
per diode 100
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 200 - -
V
Forward voltage, per diode VF
IF = 8 A - 0.93 1.03
IF = 8 A, TJ = 150 °C - 0.77 0.87
Reverse leakage current, per diode IR
VR = VR rated - - 2 μA
TJ = 150 °C, VR = VR rated - 6 100
Junction capacitance, per diode CTVR = 200 V - 23 - pF