PZTA64T3 - Motorola / Freescale Semiconductor

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MOTOROLA by PZTA63T1/D

SEMICONDUCTOR

TECHNICAL DATA

Advance information

PNP Small-Signal

Darlington Transistors

This family of PNP small-signal darlington transistors is designed for use in

preamplifiers input applications or wherever it is necessary to have ahigh input

impedance. The device is housed in the SOT-223 package which is designed for

medium power surface mount applications.

.NPN Complements are PZTAI 3 and PZTAI 4

●High fT; 125 MHz Minimum

.The SOT-223 Package can be Soldered Using Wave or Reflow.

.SOT-223 package ensures level mounting, resulting in im-

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proved thermal conduction, and allows visual inspection of sol- .’i, /

.dered joints. The formed leads absorb thermal stress during .T@&”

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soldering eliminating the possibility of damage to the die. +,.\

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.Available in 12 mm Tape and Reel s:{.<,,~;$$

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TI Configuration —7Inch Reel; 1000 Units !*t.:Y 3

T3 Configuration —13 Inch Reel; 4000 Units ~:*.,

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PZTA63TI ,T3

PZTA64TI ,T3

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MAXIMUM RATINGS i;:, ?.*’

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Rating ~.?”

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,,:$...i!>. Symbol Value Unit

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Collector-Emitter Voltage V,b

\Ti:!,,, VCES

*J.’.,?<.,+:W, –30 Vdc

Collector-Base Voltage

~.. ‘\*~

,3:,e$~.,i&\, VCBO –30 Vdc

Emitter-Base Voltage ‘*$9“~?$tv

.A* k<.~::,, VEBO -10 Vdc

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Total Power Dissipation up to TA =25°C* ~‘$t~$’”~~ Ptot* 1.5 Watis

,-~+’!h+~t.:}

Collector Current ,./:l,,.

?[c

..:, –500

~$$, mAdc

Storage Temperature Range .“.:x~~..<i:;.li,),.

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,4*I Tstg

:$i~–65to+150

~~! ‘c

Junction Temperature ~~%i~;’’’’’?’”

,.>i: TJ 150

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DEVICE MARKING ,,#;;# ,‘+4

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PZTA63 P2U +*,

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PZTA64 P2V ~,~%;~~:i?

THERMA~,~$~dCTERISTICS

Therm~jl$~i$@’ce from Junction to Ambient* ReJA 83.3

,.4...,, ‘cm

W~~~CAL CHARACTERISTICS (TA =25°C unless otherwise noted)

.,,/}.,,.

‘::) Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (1c=– 100 pAdc, VgE =O) V(BR)CES -30 —Vdc

Collector-Base Breakdown Voltage (1c=-100 nA, IE =O) V(BR)CBO –30 —Vdc

Emitter-Base Breakdown Voltage (lE =-100 nA, Ic =O) V(BR)EBO –lo —Vdc

Device mounted on a glaaa epoxy pflnted circuit board 1,575 in, x1,575 in, x0.059 in.; mounting pad for the collector lead min. 0,93 in2.

Thermal Clad is aregistered trademark of the Bergquiat Company

TMa document contains information on a new product, Specifications and information harein are subject to change without notice.

@MOTOROW INC., 1990

(continued)

MOTOROLA W

AD11494RI

ELECTRICAL CHARACTERISTICS —continued (TA =25°C unless othewise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS —continued

Emitter-Base Cutoff Current (VBE =– 10 Vdc, Ic =O) lEBO —–0.1 pAdc

Collector-Base Cutoff Current (VCB =– 30 Vdc, IE =O) ICBO —–0.1 pAdc

ON CHARACTERISTICS

DC Current Gain

(1c =- 10 mAdc, VCE =-5.0 Vdc) PZTA63

PZTA64

(1c =-100 mAdc, VCE =-5.0 Vdc) PZTA63

PZTA64

Collector-Emitter Saturation Voltage

(1c =-100 mAdc, IB =-0.1 mAdc)

Base-Emitter On-Voltage

(VCE =-5.0 Vdc, Ic =-100 mAdc)

DYNAMIC CHARACTERISTICS

hFE

vCE(sat)

vBE(on)

MOTOROLA PZTA63TI ●PZTA63T3

2PZTA64T1 ●PZTA64T3

SOT-223 POWER DISSIPATION

The power dissipation of the SOT-223 is afunction of the culate the power dissipation of the device which in this case is

collector pad size. This can vary from the minimum pad size 1.5 watts.

for soldering to the pad size given for maximum power dissipa-

tion. Power dissipation for asurface mount device is deter- pD =150°C –25°C =1,5 watts

mined by TJ(m~), the maximum rated junction temperature 83.3”CW

of the die, ReJA, the thermal resistance from the device junc-

tion to ambient; and the operating temperature, TA. Using the The 83.3°C~ assumes the recommended collecl~r pad

values provided on the data sheet, PD can be calculated as fol- area of 965 mi12 on a glass epoxy printed circuit?@@@ to

lows. achieve apower dissipation of 1.5 watts. If spa~~$~f~a pre-

TJ(max) –TA mium, amore realistic approach is to use the.Q,+~~&at aPD

pD =of 800 milliwatts using the footprint shown,. $~}$~w alternative

ReJA would be to use aceramic substrate ,pP+,~~+#Uminum core

The values for the equation are found in the maximum rat- board such as Thermal Clad. Using ~,@#r@material such as

ings table on the data sheet. Substituting these values into the ~\‘‘$?t:

Thermal CladTM,an aluminum cord%oa~, the power dissipa-

equation for an ambient temperature TA of 25°C, one can cal- tion can be doubled using the saTe’’Mtprint.

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is Y.\,,+

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MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNT#~;&PPLICATIONS

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‘%:av”~

The melting temperatq@’)&$~6@er is higher than the rated ence in temperatures of the case and the leads shall be

temperature of the de~ce’$wfhe entire device is heated to aAl O°C or less.

high temperature; th~~~,brp failure to complete soldering with- ●The soldering temperature and time shall not exceed 260°C

in ashoti time at ~“~~#’mperature can adversely affect the

following char&&~t!cs: heat resistance and humidity resis- for more than 10 seconds.

tance whic~c~wwsult in device failure. Therefore the follow- .When shiting from preheating to soldering, the maximum

ing item,~+~h~Q,d’always be observed in order to minimize the temperature gradient shall be 5°C or less.

ther~,@~$~r,@sto which the devices are subjected. ●After soldering has been completed, the device should be

.~{;\,..2$::,,,.F;.. allowed to cool naturally for three minutes or more. Gradual

,q~,~~ti~yspreheat the device cooling should be used as the use of forced cooling will

$RI@&delta temperature between the preheat and soldering increase the temperature gradient and result in latent

1..,

should be 10O°C or less* mechanical stress.

.When preheating and soldering, the temperature of the .Mechanical stress or shock should not be applied during

leads and the case must not exceed the maximum temper- cooling.

ature ratings as shown on the data sheet. When using *Soldering adevice without preheating can cause excessivethermal

infrared heating with the reflow soldering method, the differ- shock and stress which can result in damage to the device.

PZTA63T1 ●PZTA63T3 MOTOROLA,

PZTA64T1 ●PZTA64T3 3

OUTLINE DIMENSIONS

STYLE 1:

PIN 1, BASE

2, COLLECTOR

3. EMl~ER

4, COLLECTOR

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

SNLE 5:

PIN 1. DRAIN

2. GATE

3. SOURCE

4. GATE

CASE 318E-04

TO-261AA

STYLE 2

PIN 1. ANODE

2, CATHODE

3. NC

4. CATHODE

STYLE 4

PIN 1, SOURCE

2. DRAIN

3. GATE

4, DRAIN

NOTES

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14,5M, 1982,

2. CONTROLLING DIMENSION: MILLIMETERS,

Motorolares~&~~@#ght to makechangeswithout further noticeto anyproductshereinto improvereliability,function ordesign. Motoroladoes notassume

anyliability:W19?~outofthe applicationor useofanyproductorcircuitdescribed herein;neitherdoesitconveyanylicenseunderitspatent tights northe rights

ofother:~&ot~o~S productsare notdesigned, intended,or authorizedfor useascomponents insystemsintended for surgical implant intothe body,orother

aPP!\Xg*.@@ndad tosuPPoflorsustain life,orfOranYotherapplication inwhichthe failure of the Motorolaproductcould create asituationwhere personal

inj~~@.@th mayoccur.Should Buyerpurchase or useMotorola productsfor anysuchunintended or unauthorized application, Buyershall indemnify and

:,~d ~$orola anditsofficers,employees,subsidiaries,affiliates,anddistributors harmlessagainstall claims,costs,damages,andexpenses,andreasonable

,,:@ey fees arisingout of,dkectly orindirectly,anyclaim ofpersonal injuryordeath associatedwith suchunintended orunauthorized use,evenifsuchclaim

a%9es that Motorola was ne91i9entregarding the design or manufacture ofthe part. Motorola and @are registeredtrademarks of Motorola, inc. Motorola,

Inc.is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; PO. Box 2091 2; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Center; 88 Tanners Drive, Blakelands, Milton Keynes,MK14 56P, England.

JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinaoawa-ku, Tokvo 141 Ja~an.

ASIA-PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon ~arbour Center, No. 2Dai King Street, Tai Po Industrial Estate,

Tai Po, N.T., Hong Kong.

MOTOROLA

PZTA63TI ●PZTA63T3

PZTA64T1 .PZTA64T3