Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB521S-30
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
General rectification
Features
1)Ultra small mold type.（EMD2）
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRV
Io mA
IFSM A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
Forward voltage VF- - 0.50 V IF=200mA
IR--30μAVR=10V
Parameter Limits
Reverse voltage (DC) 30
Average rectified forward current 200
Forward current surge peak (60Hz・1cyc) 1
Conditions
Junction temperature 125
Storage temperature -40 to +125
Reverse current
Parameter
EMD2
0.8
1.7
0.6
ROHM : EMD2
JEITA : SC-79
JEDEC :SOD-523
dot (year week factory)
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
0.95±0.06
0
4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.05
3.5±0.05 1.75±0.1
8.0±0.15
0.2±0.05
0.76±0.05
1.26±0.05
0
φ0.5
0.6
2.0±0.05
1.3±0.06
0
2.45±0.1
空ポケット
0.2
φ1.55±0.05
2.40±0.05
0.90±0.05 0.75±0.05
1.25 0.06
0
1.25 0. 06
0
Empty pocket
1/3 2011.03 - Rev.F
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB521S-30
0.01
0.1
1
10
100
1000
10000
100000
0102030
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:VR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
REVERSE POWER
DISSIPATIONP
R
(w)
REVERSE VOLTAGE：VR(V)
VR-P
R
CHARACTERISTICS
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
400
410
420
430
440
450
Ta=25℃
IF=200mA
n=10pcs
AVE:421.0mV 0
5
10
15
20
25
30
35
40
45
50
Ta=25℃
VR=10V
n=30pcs
AVE:4.775uA
10
11
12
13
14
15
16
17
18
19
20
AVE:14.33pF
0
5
10
15
20
AVE:5.60A
0
5
10
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
1 10 100
t
Ifsm
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=20mA
300us
time
Mounted on epoxy board
0
0.05
0.1
0.15
0.2
0 0.1 0.2 0.3 0.4 0.5
0
0.1
0.2
0.3
0.4
0.5
0 102030
Sin(θ＝180)
D=1/2
DC
1
10
100
0 5 10 15 20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
f=1MHz
8.3ms
Ifsm 1cyc
DC
D=1/2
Sin(θ＝180)
2/3 2011.03 - Rev.F
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB521S-30
AMBIENT TEMPERATURE：Ta(℃)
Derating Curveﾞ
AVERAGE RECTIFIDE
FORWARD CURRENT Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
CASE TEMPARATURE：Tc(℃)
Derating Curve
0
0.1
0.2
0.3
0.4
0.5
0 25 50 75 100 125
Sin(θ＝180)
D=1/2
DC
0
0.1
0.2
0.3
0.4
0.5
0 25 50 75 100 125
Sin(θ＝180)
D=1/2
DC
T Tj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
3/3 2011.03 - Rev.F
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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