375D-03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET PTF102003 Description Key Features The PTF102003 is a 120-watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold metallization ensures excellent device lifetime and reliability. * INTERNALLY MATCHED * Typical WCDMA Performance at 28 V - Average Output Power = 20 W atts - Gain = 14 dB - Efficiency = 22% (channel bandwidth 3.84 MHz, adjacent channels 5 MHz, peak/avg 8.5:1 at 0.01% CCD) Typi cal Singl e Carrier WCDMA Perfor mance 25 Efficiency ACPR (dBc )x -40 20 Gain -45 15 -50 10 ACPR -55 V DD = 28 V IDQ = 1.45 A f = 2170 MHz -60 0 5 10 15 20 5 0 * Typical CW Performance at 28 V - Output Power at P1-dB = 120 W atts - Gain = 13 dB - Efficiency = 48% Gain (dB) & Efficiency (%) -35 * Full Gold Metallization * Integrated ESD Protection; Class 1 (minimum) Human Body Model * Excellent Thermal Stability * Broadband Internal Matching * Low HCI Drift * Capable of Handling 10:1 VSWR @ 28 V , 120 Watts (CW) Output Power 25 Output Pow er (Watts ) Guaranteed Performance WCDMA Measurements (in test fixture) VDD = 28 V, IDQ = 1.45 A, POUT = 20 W AVG f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels 5 MHz, Peak to Avg 8.5:1 Characteristic Adjacent Channel Power Ratio Gain Drain Efficiency Symbol Min Typ Max Units ACPR -- -45 -40 dB Gps 13 14.5 -- dB D 19 22 -- % Two-Tone Measurements (in test fixture) VDD = 28 V, IDQ = 1.20 A, POUT = 120 W PEP, f = 2170 MHz, Tone Spacing = 100 kHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Max Units Gps 12.5 14 -- dB D 31 36 -- % IMD -27 -30 -- dBc All published data at TCASE = 25C unless otherwise indicated. www.peakdevices.com 720-406-1221 PTF 102003 Electrical Characteristics (Guaranteed) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, IDS = 1 A/Side V(BR)DSS 65 -- -- Volts Drain Leakage Current VDS = 28 V, VGS = 0 V/Side IDSS -- -- 1.0 A On-State Resistance VGS = 10 V, IDS = 1 A/Side RDS(on) -- 0.13 -- Ohms Quiescent Current Gate Voltage VDS = 28 V, ID = 700 mA/Side VGS(Q) 2.5 3.4 4 Volts Gate Leakage Current VGS = 10 V, VDS = 0 V/Side IGSS -- -- 100 nA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Volts Gate-Source Voltage VGS +15, -0.5 Volts Operating Junction Temperature TJ 200 C Total Device Dissipation PD Above 25C derate by 330 Watts 1.88 W/C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C) R JC 0.55 C/W Typical Performance IMD vs. Output Pow er (PEP) 40 0 35 -5 Efficiency 25 20 15 IRL -20 Gain 10 5 0 2100 -15 -25 V DD = 28 V, IDQ = 1.2 A POUT = 120 W PEP 2120 2140 2160 IM3 2180 Freque nc y (MHz) www.peakdevices.com -30 V DD = 28 V, f = 2170 MHz -Tone Spacing = 100 kHz -40 -10 IMD (dBc ) x 30 -30 IRL & IMD Gain (dB) & Efficiency (%) Broa dba nd Li ne arity Perfor mance IDQ = 1.6 A -50 IDQ = 1.4 A IDQ = 1.2 A IDQ = 1.0 A -60 -35 -40 2200 -70 1 10 100 1000 Output Pow er (Watts PEP) 720-406-1221 PTF 102003 Typical Performance (cont.) IMD vs. Output Pow er Efficiency Efficiency IM3 -40 32 IM5 -50 IM7 24 16 -60 8 -70 0 140 0 20 40 60 80 100 120 15 14 13 IDQ = 1.6 A IDQ = 1.4 A 12 IDQ = 1.2 A IDQ = 1.0 A 11 10 1 10 Output Pow er (Watts -PEP) 160 0.80 3.07 0.99 5.33 0.98 7.60 0.97 9.87 0.96 0.95 -20 12.13 30 80 Case Temperature (C) 30 180 1.01 1.00 1000 Capa citance vs. Suppl y Voltage (per side ) * Voltage normalized to 1.0 V Series show current (A) 130 Cds & Cgs (pF)x Bias Voltage (V) 1.02 100 Output Pow er (Watts CW) Gate-Source Voltage vs. Case Temperature 1.03 V DD = 28 V Cgs 140 25 V GS = 0 V f = 1 MHz 120 20 100 15 80 Cds 60 40 10 5 Cdg 20 Cdg (pF) x V DD = 28 V IDQ = 1.2 A -30 IMD dBc Pow er Gain vs. Output Pow er 40 Power Gain (dB) -20 0 0 0 10 20 30 40 Supply Voltage (Volt s) * This part is internally matched. Measurements of the finished product will not yield these results. www.peakdevices.com 720-406-1221 PTF 102003 Broadband Circuit Impedance Z0 = 50 VDD = 28 V, IDQ = 1.2 A, Pout = 20 W Avg 2 Tone 1 MHz Spacing Z Source D G G Z Load S D Frequency Z Source Z Load MHz R jX R jX 2100 5.2 -6.58 2.52 -7.6 2110 5.0 -6.62 2.48 -6.8 2140 4.9 -6.73 2.56 -6.2 2170 4.8 -6.85 2.62 -5.78 2200 4.7 -7.10 2.72 -5.17 Test Circuit www.peakdevices.com 720-406-1221 PTF 102003 Test Circuit (cont.) Test Circuit Schematic for 2170 MHz DUT 1, 21 2 3 4, 14 5, 7 6, 8 9, 15 10, 16 11, 17 12, 18 13 19 20 PTF 102003 0.02 @ 2170 MHz 0.07 @ 2170 MHz 0.26 @ 2170 MHz 0.50 @ 2170 MHz 0.03 @ 2170 MHz 0.08 @ 2170 MHz 0.04 @ 2170 MHz 0.06 @ 2170 MHz 0.26 @ 2170 MHz 0.02 @ 2170 MHz 0.42 @ 2170 MHz 0.27 @ 2170 MHz 0.05 @ 2170 MHz LDMOS Transistor Microstrip 29.20 Microstrip 50 Microstrip 20.10 Microstrip 15.50 Microstrip 13.10 Microstrip 6.80 Microstrip 5.50 Microstrip 13.10 Microstrip 53.60 Microstrip 10.40 Microstrip 53.60 Microstrip 20.10 Microstrip 50 C1, C5, C8, C13 C2, C3, C7, C9, C6 C4 C12 C14 C10, C11 J1, J2 R1, R4 R2, R3 PCB Capacitor, 10 F, 35 V, Tant TE Series SMD, Digi-Key PCS6106TR Capacitor, 6.8 pF, 100A 6R8 Capacitor, 1.6 pF, ATC 600B 1R6 BW Capacitor, 5.6 pF, 100B 5R6 Capacitor, 0.1 F, 50 V, Digi-Key PCC103BCT Capacitor, 3.3 pF, ATC 600B 3R3 BW Connector, SMA Female, Panel Mount Resistor, 3.3 K ohms, 1/16W 5% 0603 Digi-Key P3.3K GCT Resistor, 1 K ohms, 1/16W 5% 0603 Digi-Key P1.0K GCT 4003, .020", 1 oz. copper both sides, 1 layer. AlliedSignal Assembly Diagram (not to scale) www.peakdevices.com 720-406-1221 PTF 102003 Case Outline Specifications Case 20275 Peak Devices, Inc 2100 Central Ave, Suite 200 Boulder, Co 80301 www.peakdevices.com 720-406-1221