2011-10-05
2
BCV29, BCV49
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 20 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV29
IC = 10 mA, IB = 0 , BCV49
V(BR)CEO
30
60
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV29
IC = 100 µA, IE = 0 , BCV49
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10 - -
Collector-base cutoff current
VCB = 30 V, IE = 0 , BCV29
VCB = 60 V, IE = 0 , BCV49
VCB = 30 V, IE = 0 , TA = 150 °C, BCV29
VCB = 60 V, IE = 0 , TA = 150 °C, BCV49
ICBO
-
-
-
-
-
-
-
-
0.1
0.1
10
10
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 100 µA, VCE = 1 V, BCV29
IC = 100 µA, VCE = 1 V, BCV49
IC = 10 mA, VCE = 5 V, BCV29
IC = 10 mA, VCE = 5 V, BCV49
IC = 100 mA, VCE = 5 V, BCV29
IC = 100 mA, VCE = 5 V, BCV49
IC = 0.5 A, VCE = 5 V, BCV29
IC = 0.5 A, VCE = 5 V, BCV49
hFE
4000
2000
10000
4000
20000
10000
4000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat - - 1 V
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VBEsat - - 1.5