DSP8-08A
Phase leg
Standard Rectifier
12/4 3
Part number
DSP8-08A
Backside: anode/cathode
FAV
F
VV1.08
RRM
8
800
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-08A
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.16
R1.5 K/W
R
min.
8
V
RSM
V
10T = 25°C
VJ
T = °C
VJ
mA0.2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
160
P
tot
100 WT = 25°C
C
RK/W
8
800
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.35
T = 25°C
VJ
150
V
F0
V0.79T = °C
VJ
175
r
F
33 mΩ
V1.08T = °C
VJ
I = A
F
V
8
1.34
I = A
F
16
I = A
F
16
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V800
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
4
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
120
130
50
50
A
A
A
A
100
110
72
70
800
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
900
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-08A
Ratings
XXXXXX
YYWW Z
Logo
Part Number
Date Code
Lot #
abcdef
Product Markin
g
A
ssembly Line
DSP8-08AS TO-263AA (D2Pak) (3) 800
Package
T
VJ
°C
M
D
Nm0.6
mounting torque 0.4
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 25 A
per terminal
175-55
DSP8-12A
DSP8-12AC
TO-220AB (3)
ISOPLUS220AB (3)
1200
1200
DSP8-12S
DSP8-12AS
TO-263AB (D2Pak) (2)
TO-263AA (D2Pak) (3)
1200
1200
TO-220
Similar Part Package Voltage class
DSP8-08S TO-263AB (D2Pak) (2) 800
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
DSP8-08A 465054Tube 50DSP8-08AStandard
threshold voltage V0.79
mΩ
V
0 max
R
0 max
slope resistance * 30
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-08A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
123
4
12/4 3
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSP8-08A
0.001 0.01 0.1 1
40
60
80
100
2345678011
10
1
10
2
0.60.81.01.21.41.6
0
4
8
12
16
20
024681012
0
4
8
12
16
0 25 50 75 100 125 150 175 200
1 10 100 1000 10000
0.0
0.4
0.8
1.2
1.6
0 50 100 150 200
0
4
8
12
16
20
24
28
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 150°C
V
R
=0 V
T
VJ
= 45°C
I
F
[A]
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t[ms]
P
tot
[W]
I
F(AV)M
[A] T
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fi
g
. 6 Transient thermal impedance
j
unction to case
t[ms]
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.155 0.0005
2 0.332 0.0095
3 0.713 0.17
40.3 0.8
5 0.00001 0.00001
T
VJ
= 150°C
125°C
25°C
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thJA
:
4 K/W
8 K/W
10 K/W
12 K/W
16 K/W
20 K/W
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130107bData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
