Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697 (412)925-7272 WWW.PWRX.COM Phase Control Thyristor
3200 Amperes/Up to 1600 Volts
Ordering Information
Select the complete 12 digit device part number from the table below.
Description:
Powerex Silicon Controlled Rectifiers (SCR) are
designed for phase control applications. These
are all-diffused, hermetic Pow-R-Disc devices
employing the field-proven amplifying gate.
Features:
Low On-State Voltage
High di/dt Capability
High dv/dt Capability
Excellent Surge and I2t Ratings
Applications:
Power Supplies
Battery Chargers
Motor Controllers
TBS716P13.DOC.12/10/97
TBS7
3200A
Type Voltage
VDRM
VRRM
Current
IT(av) Turn-Off
tq Gate
Current
IGT
Lead
Code
TBS7 12
14
16
32 0 3 DH
1200 V
1400 V
1600 V
3200 A 350 µs
typical 200 mA 12"
A DIA.
C DIA.
A DIA.
B DIA.
D
E
D
H
ABCD E FGHSYM.
INCHES
MM
.030
0.76 .140
3.56
ANODE
MARKING CATHODE
F DIA. TYP.
G DEEP TYP.
]
]
GATE TERMINAL
FOR .058 INCH /
1.47 MM DIA. NOM.
PIN RECEPTACLE
CATHODE POTENTIAL TERMINAL
FOR .187 INCH / 4.75 MM NOM.
PUSH-ON TYPE TERMINAL
20
O
20
O
CASE NUMBER
TBS
2.88
73.2 4.36
110.7 3.95
100.3 .080
2.03
1.010/1.080
25.65/27.43
NOMINAL DIMENSIONS STRIKE DISTANCE = .62 INCH / 15.7 MM MIN.
CREEPAGE DISTANCE = 1.00 INCH / 25.4 MM MIN.
ALL DIMENSIONS ARE REFERENCE
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Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697 (412)925-7272 WWW.PWRX.COM Phase Control Thyristor
3200 Amperes/Up to 1600 Volts
Absolute Maximum Ratings
Characteristics
Symbol
Units
Non-repetitive Transient Peak Reverse Voltage VRSM VRRM+100V V
RMS On-State Current IT(RMS) 5025 A
Average Current 180° Sine Wave, TC=76°C I
T(AV) 3200 A
Peak One Cycle Surge On-State Current (Non-Repetitive)
60Hz I
TSM 44,000 A
Peak One Cycle Surge On-State Current (Non-Repetitive)
50Hz I
TSM 40500 A
Critical Rate-of-Rise of On-State Current (Non-Repetitive) di/dt 300 A/µs
Critical Rate-of-Rise of On-State Current (Repetitive) di/dt 100 A/µs
I2t for Fusing for One Cycle, 60 Hz I2t 8.07x106 A
2s
Peak Gate Power Dissipation PGM 250 W
Average Gate Power Dissipation PG(av) 35 W
Operating Temperature TJ -40 to 125°C °C
Storage Temperature TSTG -40 to 150°C °C
Mounting Force 6000 to 10000
26.6 to 44.4 lb.
kN
TBS716P13.DOC.1/19/2006
Information presented is based upon manufacturers testing and projected
capabilities. This information is subject to change without notice. The
manufacturer makes no claim as to suitability for use, reliability, capability or
future availability of this product.
TBS7
3200A
http://store.iiic.cc/
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697 (412)925-7272 WWW.PWRX.COM Phase Control Thyristor
3200 Amperes/Up to 1600 Volts
Electrical Characteristics, TJ=25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Repetitive Peak Reverse Leakage
Current IRRM TJ=125°C, VR=VRRM 150 mA
Repetitive Peak Forward Leakage
Current IDRM TJ=125°C, VD=VDRM 150 mA
Peak On-State Voltage VTM TJ=25°C, ITM=3000A
Duty Cycle < 0.01%
1.25 V
Threshold Voltage, Low-level V(TO)1 TJ=125°C, for 500AITM<10,000A 0.776 V
Slope Resistance, Low-level rT1 0.0889
m
Threshold Voltage, High-level V(TO)2 TJ=125°C, for ITM<10,0000A 1.032 V
Slope Resistance, High-level rT2 0.0735
m
ABCD VTM Modeling Coefficients A
B
C
D
TJ=125°C, for 500AITM<60,000A
0.7393
-0.01883
0.05747
0.005836
V
-
m
Typical Delay Time td I
TM=1000A, VD=0.5VDRM 3 µs
Maximum Turn-Off Time tq TJ=125°C, IT=1000A, diR/dt=25A/µs
dv/dt=20V/µs linear to 80% VDRM 350 µs
Minimum Critical dv/dt -
Expodential to VDRM dv/dt TJ=125°C 300 V/µs
Gate Trigger Current IGT TJ=25°C, VD=12V 200 mA
Gate Trigger Voltage VGT TJ=25°C, VD=12V 4.0 V
Non-Triggering Gate Voltage VGDM TJ=125°C, VD=VDRM 0.5 V
Peak Forward Gate Current IGTM 4A
Peak Reverse Gate Voltage VGRM 10 V
Thermal Characteristics
Characteristics Symbol Min. Typ. Max. Units
Maximum Thermal Resistance, Double
Sided Cooling
Junction to Case
Case to Sink
RΘJC
RΘCS
.010
.002
°C/W
°C/W
TBS716P13.DOC.12/10/97
TBS7
3200A
http://store.iiic.cc/