BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT5401
Document number: BL/SSSTC075 www.galaxycn.com
Rev.A 2
Symbol Parameter Test conditions MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=-100μA,IE=0 -160
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=0 -150
V(BR)EBO Emitter-base breakdown voltage IE=-10μA,IC=0 -5
ICBO collector cut-off current IE = 0; VCB = -120V - -50 nA
IEBO emitter cut-off current IC = 0; VEB = -3V - -50 nA
hFE DC current gain
VCE = -5V; IC= -1mA
VCE = -5V;IC = -10mA
VCE = -5V;IC = -50 mA
50
60
50
-
240
-
VCE(sat) collector-emitter saturation voltage IC = -10 mA; IB = -1 mA
IC = -50 mA; IB = -5 mA - -0.2
-0.5 V
VBE(sat) base-emitter saturation voltage IC = -10 mA; IB = -1 mA
IC = -50 mA; IB = -5 mA - -1
-1 V
fT transition frequency IC = -10mA; VCE = -5V;
f = 100MHz 100 300 MHz
Cobo Output capacitance IE=0; VCB= -10V,
f = 1.0MHz 6.0 MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified