Power Amplifier for Bluetooth, Home RF and WLAN applications 1 Solder Bump 2 Under Bump Metallization 2 3 4 Pad Metallization 4 Chip Passivation 5 GaAs 5 Products Technology Package Area [mm2] Pout [dBm] PAE [%] TG T628B InGaP HBT FlipChip 0,56 23 50 20 CGB240 InGaP HBT TSSOP10 14,5 23 50 20 CGY63 D-MESFET SCT598 7,54 19 38 17 CGY196 D-MESFET SCT598 7,54 26 up to 40 22 T w o n e w c o m e r s in our Power Amplifier family: Infineon's latest Bluetooth InGaP HBT high performance Power Amplifiers CGB240 and T628 are already available, in TSSOP10 package and bare-chip solution respectively. B o t h p o w e r a m p l i f i e r s have outstanding PAEs of about 50 % with a high corresponding transducer gain of 20dB at an input power of 3dBm and supply voltage of 3.2V. The power amplifier performance has been optimized for 4 discrete output power-levels: 23dBm, 16dBm, 8dBm and 0dBm, the short range Bluetooth solution. Each of these 4 discrete power steps can be selected via an analog control signal (Vctrl-Pin). O u r f l i p c h i p P o w e r A m p l i f i e r T 6 2 8 requires a chip area of only 0.56mm2. In order to guarantee a leadless production, these chips are already equipped with reflowed SnAu-bumps instead of SnPb-bumps. Published by Infineon Technologies AG Ordering No. B138-H7668-G1-x-7600 Printed in Germany WS 09001. Z&P 2001175 1 3