Published by Infineon Technologies AG
Ordering No. B138-H7668-G1-x-7600
Printed in Germany
WS 09001.
T628B InGaP HBT FlipChip 0,56 23 50 20
CGB240 InGaP HBT TSSOP10 14,5 23 50 20
CGY63 D-MESFET SCT598 7,54 19 38 17
CGY196 D-MESFET SCT598 7,54 26 up to 40 22
Two newcomers in our Power Amplifier family: Infineon’s
latest Bluetooth InGaP HBT high performance Power Amplifiers CGB240 and T628
are already available, in TSSOP10 package and bare-chip solution respectively.
Both power amplifiers have outstanding PAEs of about 50%
with a high corresponding transducer gain of 20dB at an input power of 3dBm and
supply voltage of 3.2V. The power amplifier performance has been optimized for 4
discrete output power-levels: 23dBm, 16dBm, 8dBm and 0dBm, the short range Blue-
tooth solution. Each of these 4 discrete power steps can be selected via an analog
control signal (Vctrl-Pin).
Our flipchip Power Amplifier T628 requires a chip area
of only 0.56mm2. In order to guarantee a leadless production, these chips are already
equipped with reflowed SnAu-bumps instead of SnPb-bumps.
1 Solder Bump
2 Under Bump
Metallization
3 Pad Metallization
4 Chip Passivation
5 GaAs
Power Amplifier for Bluetooth, Home RF and
WLAN applications
1234 5
Products Technology Package Area [mm2]Pout [dBm] PAE [%] TG
Z&P 2001175