© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ800 V
VGS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C39A
IDM TC= 25°C, pulse width limited by TJM 100 A
IAR TC= 25°C22A
EAR TC= 25°C80mJ
EAS TC= 25°C 3.4 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 694 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
IISOL < 1 mA, 10 seconds 3000 V~
MdMounting torque 1.13/10 Nm/lb.in.
Terminal torque 1.13/10 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 800 μA 800 V
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V
IGSS VGS = ± 30 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 50 μA
VGS = 0 V TJ = 125°C 1.5 mA
RDS(on) VGS = 10 V, ID = 0.5 ITD25, Note 1 190 mΩ
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 44N80P VDSS = 800 V
ID25 =39 A
RDS(on) ≤≤
≤≤
≤190 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤250 ns
DS99503E(06/06)
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•International standard package
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•miniBLOC with Aluminium nitride
isolation
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Synchronous rectification
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
•Low voltage relays
Advantages
•Easy to mount
•Space savings
•High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 44N80P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 0.5 ID25, Note 1 27 43 S
Ciss 12 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 910 pF
Crss 30 pF
td(on) 28 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns
td(off) RG = 1 Ω (External) 75 ns
tf27 ns
Qg(on) 200 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 67 nC
Qgd 65 nC
RthJC 0.18 °C/W
RthCS 0.05 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 44 A
ISM Repetitive 100 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 22 A, -di/dt = 100 A/μs 250 ns
QRM VR = 100 V, VGS = 0 V 0.8 μC
IRM 8.0 A
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2%
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
© 2006 IXYS All rights reserved
IXFN 44N80P
Fig . 2. Extended Output Charact eristics
@ 25
°
C
0
10
20
30
40
50
60
70
80
90
100
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 3. Ou tput Charac terist ics
@ 125
°
C
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10121416
V
D S
- Volts
I
D
- Amperes
V
GS
= 10 V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
°
C
0
5
10
15
20
25
30
35
40
45
012345678
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on
)
Normalized to I
D
= 22A
V alue vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- N orm al ized
I
D
= 44A
I
D
= 22A
V
GS
= 10V
Fig. 5. R
DS(on)
Normalized to I
D
= 2 2A
Va lue vs. Dra in Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 102030405060708090100
I
D
- Amperes
R
D S ( o n )
- N orm al ized
T
J
= 25
°
C
V
GS
= 10V T
J
= 12 5
°
C
Fig. 6. Drain Current vs . Case
Temperature
0
4
8
12
16
20
24
28
32
36
40
44
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
I D - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 44N80P
Fig. 11. Capacitance
10
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - Pi coFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200
Q
G
- NanoCo ulombs
V
G S
- Vo lts
VDS
= 400V
ID
= 22A
IG
= 10mA
Fig. 7. Input Admitt ance
0
10
20
30
40
50
60
70
3.5 4 4.5 5 5.5 6 6.5
V
G S
- Volts
I
D
- Am peres
TJ = 1 25
°
C
25
°
C
- 40
°
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 1020304050607080
I
D
- Amper es
g f s
- Siem ens
TJ = - 40
°
C
25
°
C
125
°
C
Fig. 9. Source C urrent vs.
Sour ce -To-Drain Voltage
0
20
40
60
80
100
120
140
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
S D
- Volts
I
S
- Am peres
TJ
= 125
°
C
TJ
= 25
°
C
Fig . 12. Maximum T ransien t T h er m al
Resistance
0.01
0.10
1.00
0.001 0.01 0.1 1 10
Puls e W idth - Sec onds
R( t h ) J C - ºC / W
