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DTrenchFETr Power MOSFET
DAdvanced High Cell Density
Process
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DLoad Switches
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Available
Si4425BDY
Vishay Siliconix
Document Number: 72000
S-50366—Rev. D, 28-Feb-05
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
−
30
0.012 @ VGS = −10 V −11.4
−
30
0.019 @ VGS = −4.5 V −9.1
SD
SD
SD
GD
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
Ordering Information: Si4425BDY
Si4425BDY—T1 (with Tape and Reel)
Si4425BDY—E3 (Lead (Pb)-Free)
Si4425BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS −30
V
Gate-Source Voltage VGS "20
V
Continuous Drain Current (TJ
=
150
_
C)
a
TA = 25_C
ID
−11.4 −8.8
C
on
ti
nuous
D
ra
i
n
C
urren
t (T
J
=
150_C)a
TA = 70_C
I
D
−9.1 −7.0
A
Pulsed Drain Current IDM −50
A
continuous Source Current (Diode Conduction)aIS−2.1 −1.3
Maximum Power Dissipationa
TA = 25_C
PD
2.5 1.5
W
Maximum Power Dissipationa
TA = 70_CPD1.6 0.9 W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Mi J ti tAbit
a
t v 10 sec
R
40 50
Maximum Junction-to-Ambienta
Steady State RthJA 70 85 _C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 15 18
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Si4425BDY
Vishay Siliconix
www.vishay.com
2 Document Number: 72000
S-50366—Rev. D, 28-Feb-05
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA−1.0 −3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V"100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V −1
Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V, TJ = 55_C−5mA
On-State Drain CurrentaID(on) VDS v −5 V, VGS = −10 V −50 A
Drain Source On State Resistancea
rDS( )
VGS = −10 V, ID = −11.4 A 0.010 0.012
Drain-Source On-State ResistancearDS(on) VGS = −4.5 V, ID = −9.1 A 0.015 0.019 W
Forward Transconductanceagfs VDS = −15 V, I D = −11.4 A 29 S
Diode Forward VoltageaVSD IS = −2.5 A, VGS = 0 V −0.8 −1.2 V
Dynamicb
Total Gate Charge Qg64 100
Gate-Source Charge Qgs VDS = −15 V, VGS = −10 V, ID = −11.4 A 11 nC
Gate-Drain Charge Qgd
DS ,GS ,D
17
Turn-On Delay Time td(on) 15 25
Rise Time trVDD = −15 V, RL = 15 W13 20
Turn-Off Delay Time td(off)
VDD = −15 V
,
RL = 15 W
ID ^ −1 A, VGEN = −10 V, RG = 6 W100 150 ns
Fall Time tf53 80
Source-Drain Reverse Recovery Time trr IF = −2.5 A, di/dt = 100 A/ms 41 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
012345
0
10
20
30
40
50
012345
VGS = 10 thru 5 V
TC = 125_C
−55_C
25_C
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
4 V
3 V
Si4425BDY
Vishay Siliconix
Document Number: 72000
S-50366—Rev. D, 28-Feb-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) − On-Resiistance
(Normalized)
− On-Resistance (rDS(on) W)
0
1000
2000
3000
4000
5000
0 6 12 18 24 30
0.6
0.8
1.0
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
0
2
4
6
8
10
0 1020304050607080
0.000
0.005
0.010
0.015
0.020
0.025
0 1020304050
VDS − Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 15 V
ID = 12 A
ID − Drain Current (A)
VGS = 10 V
ID = 12 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
C − Capacitance (pF)
VGS
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.00
0.01
0.02
0.03
0.04
0.05
0246810
TJ = 25_C
ID = 12 A
50
10
1
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
− On-Resistance (rDS(on) W)
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
− Source Current (A)IS
VGS = 4.5 V
TJ = 150_C
Si4425BDY
Vishay Siliconix
www.vishay.com
4 Document Number: 72000
S-50366—Rev. D, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
0
30
10
20
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
10−310−21 10 60010−1
10−4100
−0.4
−0.2
0.0
0.2
0.4
0.6
0.8
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
Variance (V)VGS(th)
TJ − Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 70_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
1600
10010−1
10−210
5
25
15
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
TA = 25_C
Single Pulse
− Drain Current (A)ID
P(t) = 10
dc
0.1
IDM Limited
ID(on)
Limited
*rDS(on) Limited
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
Si4425BDY
Vishay Siliconix
Document Number: 72000
S-50366—Rev. D, 28-Feb-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10−310−211010−1
10−4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix maintains worldwide m anufactur ing capability. Produc ts m ay be manufac tured at one of several qualified locations. R e liabilit y d at a for Silicon Technology an d
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72000.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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