SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor "*,+ "**+5 "%*+ " 61!! 6@!! 1!! @!! " 6!! 6A!! !! A!! 9#" 0 6!!! # ' ( 6 !; %,; 9 0 < =) ,>9 6!!!36? ,>9 6!!!36A? ,>9 6!!!3?B ,>9 6!!!3A?B C!! !! ,>9 6!!!3 ?B Symbol Conditions 9#" % ( 6 !; 9 0 6!! ' <) =; : D 36 !; 9 0 .< =; E 3 EA : D 36 !8; 9 0 1< =; E 3 EA *+, : D 36 !; 9 0 .< =; 46 9,+ 9F 0 < =; 6! 9F 0 6< =; 6! 9F 0 < =; 51 ((( 6! 9F 0 6< =; 51 ((( 6! 61A!!!! #G :( :( 656. :( !5.1 " " 2 :( 6!! # 6 I G SKT 1000 Features !! " # $ Typical Applications % '( ( ) '( ( $ ) # '( ( ) * ( ( ""*+, - .!! "/ * 0 11 231 45 0 6 78 9*+, 0 1!! # ' : ) Values Units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c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation vs. on-state current Fig. 1R Power dissipation vs. ambient temperature Fig. 2L Rated on-state current vs. case temperature Fig. 2R Rated on-state current vs. case temperature Fig. 3 Recovered charge vs. current decrease Fig. 4 Transient thermal impedance vs. time 2 08-12-2005 NOS (c) by SEMIKRON SKT 1000 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 5 Thermal resistance vs. conduction angle Fig. 6 On-state characteristics Fig. 7 Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time 3 08-12-2005 NOS (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm E 6. 'P?%?/ 9!!#%) This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 08-12-2005 NOS (c) by SEMIKRON