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DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 08 2004 Dec 06
DISCRETE SEMICONDUCTORS
BCV28; BCV48
PNP Darlington transistors
db
ook, halfpage
M3D109
2004 Dec 06 2
NXP Semiconductors Product data sheet
PNP Darlington transistors BCV28; BCV48
FEATURES
Very high DC current gain (min . 10 000)
High current (max. 500 mA)
Low voltage (max. 60 V).
APPLICATIONS
Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BCV29 and BCV49.
PINNING
PIN DESCRIPTION
1emitter
2collector
3base
321
sym08
8
TR1 TR2
1
23
Fig.1 Simplified outline (SOT89 ) and symbo l .
MARKING
TYPE NUMBER MARKING CODE
BCV28 ED
BCV48 EE
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BCV28 SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads SOT89
BCV48
2004 Dec 06 3
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BCV28; BCV48
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter
BCV28 40 V
BCV48 80 V
VCES collector-emitter voltage VBE = 0 V
BCV28 30 V
BCV48 60 V
VEBO emitter-base vo ltage open collector 10 V
ICcollector current (DC) 500 mA
ICM peak collector current 800 mA
IBbase current (DC) 100 mA
Ptot total power dissipation Tamb 25 °C; note 1 1.3 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 96 K/W
Rth(j-s) thermal resistance from junction to soldering point 16 K/W
2004 Dec 06 4
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BCV28; BCV48
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current
BCV28 IE = 0 A; VCB = 30 V 100 nA
BCV48 IE = 0 A; VCB = 60 V 100 nA
IEBO emitter-base cu t-off current IC = 0 A; VBE = 10 V 100 nA
hFE DC current gain IC = 1 mA; VCE = 5 V; see Fig.2
BCV28 4 000
BCV48 2 000
DC current gain IC = 10 mA; VCE = 5 V; see Fig.2
BCV28 10 000
BCV48 4 000
DC current gain IC = 100 mA; VCE = 5 V; see Fig.2
BCV28 20 000
BCV48 10 000
DC current gain IC = 500 mA; VCE = 5 V; see Fig.2
BCV28 4 000
BCV48 2 000
VCEsat collector-emitter saturation
voltage IC = 100 mA; IB = 0.1 mA 1 V
VBEsat base-emitt er saturation voltage IC = 100 mA; IB = 0.1 mA 1.5 V
VBEon base-emitter on-state voltage IC = 10 mA; IB = 5 mA 1.4 V
fTtransition freque ncy IC = 30 mA; VCE = 5 V;
f = 100 MHz
220 MHz
2004 Dec 06 5
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BCV28; BCV48
handbook, full pagewidth
0
100000
20000
40000
60000
80000
hFE
MGD836
110 IC (mA)
102103
Fig.2 DC current gain; typical values.
VCE = 5 V.
2004 Dec 06 6
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BCV28; BCV48
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 04-08-03
06-03-16
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2004 Dec 06 7
NXP Semiconductors Pr oduct data shee t
PNP Darlington transistors BCV28; BCV48
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Applications Applications that are described herein for
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NXP Semiconductors makes no representation or
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specified use witho ut fu rth e r testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp8 Date of release: 2004 Dec 06 Document orde r number: 9397 750 13862