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DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 08 2004 Dec 06

DISCRETE SEMICONDUCTORS

BCV28; BCV48

PNP Darlington transistors

ook, halfpage

M3D109

2004 Dec 06 2

NXP Semiconductors Product data sheet

PNP Darlington transistors BCV28; BCV48

FEATURES

•Very high DC current gain (min . 10 000)

•High current (max. 500 mA)

•Low voltage (max. 60 V).

APPLICATIONS

•Where very high amplification is required.

DESCRIPTION

PNP Darlington transistor in a SOT89 plastic package.

NPN complements: BCV29 and BCV49.

PINNING

PIN DESCRIPTION

1emitter

2collector

3base

321

sym08

TR1 TR2

Fig.1 Simplified outline (SOT89 ) and symbo l .

MARKING

TYPE NUMBER MARKING CODE

BCV28 ED

BCV48 EE

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BCV28 SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

BCV48

2004 Dec 06 3

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BCV28; BCV48

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

Note

1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

THERMAL CHARACTE RISTICS

Note

1. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter

BCV28 − −40 V

BCV48 − −80 V

VCES collector-emitter voltage VBE = 0 V

BCV28 − −30 V

BCV48 − −60 V

VEBO emitter-base vo ltage open collector − −10 V

ICcollector current (DC) − −500 mA

ICM peak collector current − −800 mA

IBbase current (DC) − −100 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.3 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 96 K/W

Rth(j-s) thermal resistance from junction to soldering point 16 K/W

2004 Dec 06 4

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BCV28; BCV48

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current

BCV28 IE = 0 A; VCB = −30 V − − −100 nA

BCV48 IE = 0 A; VCB = −60 V − − −100 nA

IEBO emitter-base cu t-off current IC = 0 A; VBE = −10 V − − −100 nA

hFE DC current gain IC = −1 mA; VCE = −5 V; see Fig.2

BCV28 4 000 − −

BCV48 2 000 − −

DC current gain IC = −10 mA; VCE = −5 V; see Fig.2

BCV28 10 000 − −

BCV48 4 000 − −

DC current gain IC = −100 mA; VCE = −5 V; see Fig.2

BCV28 20 000 − −

BCV48 10 000 − −

DC current gain IC = −500 mA; VCE = −5 V; see Fig.2

BCV28 4 000 − −

BCV48 2 000 − −

VCEsat collector-emitter saturation

voltage IC = −100 mA; IB = −0.1 mA − − −1 V

VBEsat base-emitt er saturation voltage IC = −100 mA; IB = −0.1 mA − − −1.5 V

VBEon base-emitter on-state voltage IC = −10 mA; IB = −5 mA − − −1.4 V

fTtransition freque ncy IC = −30 mA; VCE = −5 V;

f = 100 MHz

−220 −MHz

2004 Dec 06 5

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BCV28; BCV48

handbook, full pagewidth

100000

20000

40000

60000

80000

hFE

MGD836

−1−10 IC (mA)

−102−103

Fig.2 DC current gain; typical values.

VCE = −5 V.

2004 Dec 06 6

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BCV28; BCV48

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 04-08-03

06-03-16

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Dec 06 7

NXP Semiconductors Pr oduct data shee t

PNP Darlington transistors BCV28; BCV48

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Applications ⎯ Applications that are described herein for

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specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/05/pp8 Date of release: 2004 Dec 06 Document orde r number: 9397 750 13862