Document Number: 83672 www.vishay.com
Revision 17-August-01
2–239
FEATURES
• Variety of Current Transfer Ratios at 5.0 mA
– AA: 50–600%
– AGB: 100–600%
– AGR: 100–300%
– ABM: 200–400%
– ABL: 200–600%
– AY: 50–150%
– AB: 80–260%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 V
RMS
• High Collector-emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
DESCRIPTION
The SFH615XXX features a large assortment of cur-
rent transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infra-
red emitting diode emitter, which is optically coupled
to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
operation voltage of 400 V
RMS
or DC.
V
DE
Maximum Ratings
Emitter
Reverse Voltage ................................................................................6.0 V
DC Forward Current........................................................................60 mA
Surge Forward Current (t
P
≤
10
µ
s) ....................................................2.5 A
Total Power Dissipation................................................................100 mW
Detector
Collector-Emitter Voltage....................................................................70 V
Emitter-Collector Voltage...................................................................7.0 V
Collector Current.............................................................................50 mA
Collector Current (t
P
≤
1.0 ms)........................................................100 mA
Total Power Dissipation................................................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ......................................................................5300 V
RMS
Creepage...................................................................................
≥
7.0 mm
Clearance...................................................................................
≥
7.0 mm
Insulation Thickness between Emitter and Detector..................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1...............................................
≥
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ..............................................................
≥
10
11
Ω
Storage Temperature Range..............................................–55 to +150
°
C
Ambient Temperature Range.............................................–55 to +100
°
C
Junction Temperature ..................................................................... 100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm) ........................................... 260
°
C
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4°
typ.
0.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10°
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
Dimensions in inches (mm)
1
2
4
3
Anode Collector
Cathode Emitter
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
5.3 kV TRIOS“ Optocoupler
High Reliability