TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
Publication Order Number:
TIP122/D
© 2001 Semiconductor Components Industries, LLC.
November-2017, Rev.2
TIP120 / TIP121 / TIP122
NPN Epitaxial Darlington Transistor
Features
• Medium Power Linear Switching Applications
• Complementary to TIP125 / TIP126 / TIP127
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditi ons an d s tres si ng the parts to these levels is not reco mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP120 TIP120 TO-220 3L (Single Gauge) Bulk
TIP120TU TIP120 TO-220 3L (Single Gauge) Rail
TIP121 TIP121 TO-220 3L (Single Gauge) Bulk
TIP121TU TIP121 TO-220 3L (Single Gauge) Rail
TIP122 TIP122 TO-220 3L (Single Gauge) Bulk
TIP122TU TIP122 TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP120 60 VTIP121 80
TIP122 100
VCEO Collector-Emitter Voltage TIP120 60 VTIP121 80
TIP122 100
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 5 A
ICP Collector Current (Pulse) 8 A
IB Base Current (DC) 120 mA
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 8kΩ≅
R2 0.12kΩ≅
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
www.onsemi.com
2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 65
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage
TIP120 IC = 100 mA, IB = 0 60 VTIP121 80
TIP122 100
ICEO Collector Cut-Off Current TIP120 VCE = 30 V, IB = 00.5
mATIP121 VCE = 40 V, IB = 0 0.5
TIP122 VCE = 50 V, IB = 0 0.5
ICBO Collector Cut-Off Current TIP120 VCB = 60 V, IE = 0 0.2 mATIP121 VCB = 80 V, IE = 0 0.2
TIP122 VCB = 100 V, IE = 0 0.2
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA
hFE DC Current Gain(1) VCE = 3 V, IC = 0.5 A 1000
VCE = 3 V, IC = 3 A 1000
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 3 A, IB = 12 mA 2.0 V
IC = 5 A, IB = 20 mA 4.0
VBE(on) Base-Emitter On Voltage(1) VCE = 3 V, IC = 3 A 2.5 V
Cob Output Capacitance VCB = 10 V, IE = 0,
f = 0.1 MHz 200 pF
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Output and Input Capacitance
vs. Reverse Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1 1 10
100
1000
10000
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.5
1.0
1.5
2.0
2.5
3.0
3.5 IC = 250IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
Cob
f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Cob[pF] Cib[pF], CAPACITANC E
Cib
1 10 100
0.01
0.1
1
10
TIP121
TIP122
TIP120
DC
5ms
100μs
500μs
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
www.onsemi.com
4
Physical Dimensions
Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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