MIL-PRF-19500/291W
17 May 2016
SUPERSEDING
MIL-PRF-19500/291V
16 October 2014
PERFORMANCE SPECIFICATION SHEET
* TRANSISTOR, PNP, SILI CON, SWITCHING,
TYPES 2N2906A, 2N2907A,
JAN, JANTX, JANTXV, JANS, JANHC, JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four
levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as
specified in MIL-PRF-19500 and two levels of product assurance(JANHC and JANKC) are provided for each
unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided
for JANTXV, JANS, JANHC, and JANKC product assurance levels. Radiation hardness assurance (RHA) level
designators “M”, “D”, “P“, “L” “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices which have
passed RHA requirements.
* 1.2 Physical dimensions. The device packages for the encapsulated device types are as follows: (2N2906A)
(similar to a TO-18) in accordance with figure 1,(2N2907AUA) UA in accordance with figure 2, (2N2906AUB) in
accordance with figure 3 UB (metal lid, as shield, connected to fourth pad), UBC (ceramic lid, braze-ring connected to
fourth pad), UBN (3-pin, isolated metal lid), and UBCN (3-pin, isolated ceramic lid). The dimensions and topography
for JANHC and JANKC unencapsulated die is as follows: The B version die in accordance with figure 4, and D
version die in accorda nce w ith 5 (JANHC and JANKC).
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
Types
IC VCBO VEBO VCEO TJ and TSTG
All devices
mA dc
-600
V dc
-60
V dc
-5
V dc
-60
°C
-65 to +200
AMSC N/A FSC 5961
Comments, suggestions, or questions on this document should be addr es sed to DLA Land and M ar itime , ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.dla.mil .
INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 17 August 2016.
MIL-PRF-19500/291W
2
1.3 Maximum ratings. Unless otherwise specif ied TA = +25°C. - Continued.
Types
PT
PT
PT
PT
RθJA
RθJC
RθJSP(IS)
RθJSP(AM)
TA = +25°C
(1) (2)
TC = +25°C
(1) (2)
TSP(IS) = +25°C
(1) (2)
TSP(AM) =
+25°C (1) (2)
(2) (3)
(2)
(3)
(2) (3)
(2) (3)
W
W
W
W
°C/W
°C/W
°C/W
°C/W
2N2906A, L,
2N2907A, L
0.5
0.5
1.0
1.0
N/A
N/A
N/A
N/A
325
325
150
150
N/A
N/A
N/A
N/A
2N2906AUA,
2N2907AUA
(4) 0.5
(4) 0.5
N/A
N/A
1.0
1.0
1.5
1.5
(4) 325
(4) 325
N/A
N/A
110
110
40
40
2N2906AUB,
and UBN
2N2907AUB
and UBN
(4)0.5
(4) 0.5
N/A
N/A
1.0
1.0
N/A
N/A
(4) 325
(4) 325
N/A
N/A
90
90
N/A
N/A
2N2906AUBC
and UBCN
2N2907AUBC
and UBCN
(4) 0.5
(4) 0.5
N/A
N/A
1.0
1.0
N/A
N/A
(4) 325
(4) 325
N/A
N/A
90
90
N/A
N/A
(1) For derating, see figures 6, 7, 8, 9, and 10.
(2) See 3.3 for abbreviations.
(3) For thermal curves, see figures 11, 12, 13, 14, and 15.
(4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 6
and 11 for the UA, UB,, UBC, UBN, and UBCN package and use RθJA.
1.4 Primary electrical characteristic s. Un les s otherwise specified TA = +25°C.
hFE at VCE = -10 V dc
h
FE1
IC = -0.1 mA dc
h
FE2
IC = -1.0 mA dc
h
FE3
IC = -10 mA dc
h
FE4
(1)
IC = -150 mA dc
h
FE5
(1)
IC = -500 mA dc
2N2906A,
L, UA,UB,
UBC
, UBN,
UBCN
2N2907A,
L, UA,UB
, ,
UBC
, UBN,
UBCN
2N2906A
L, UA,UB,
UBC
, UBN,
UBCN
2N2907A
L, UA,UB
,
UBC
, UBN,
UBCN
2N2906A
L, UA,UB,
UBC
, UBN,
UBCN
2N2907A
L, UA,UB
,
UBC
, UBN,
UBCN
2N2906A
L, UA,UB,
UBC
, UBN,
UBCN
2N2907A
L, UA,UB
,
UBC
, UBN,
UBCN
2N2906A
L, UA,UB,
UBC,
UBN,
UBCN
2N2907A L,
UA,UB,
UBC
, UBN,
UBCN
Min
40
75
40
100
40
100
40
100
40
50
Max
175
450
120
300
Switching (saturated)
Types
Limit
|h
fe
|
f = 100 MHz VCE = -20 V dc,
IC = -20 mA dc
C
obo
100 kHz ≤ f ≤ 1 MHz
VCB = -10 V dc, IE = 0
t
on
See figure 16
t
off
See figure 17
2N2906A,
2N2907A,
pF
ns
ns
L, UA, UB, UBC,
Min
2.0
UBN, UBCN
Max
8
45
300
Types
Limits
VCE(sat)1 (1)
IC = -150 mA dc
IB = -15 mA dc
VCE(sat)2 (1)
IC = -500 mA dc
IB = -50 mA dc
VBE(sat)1 (1)
IC = -150 mA dc
IB = -15 mA dc
VBE(sat)2 (1)
IC = -500 mA dc
IB = -50 mA dc
2N2906A, 2N2907A,
V dc
V dc
V dc
V dc
L, UA, UB, UBC
Min
-0.6
UBN, UBCN
Max
-0.4
-1.6
-1.3
-2.6
(1) Pulsed see 4.5.1.
MIL-PRF-19500/291W
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* 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein.
See 6.5 for PIN construction example and 6.6 for a list of available PINs.
* 1.5.1 JAN certification mark and quality level designators.
* 1.5.1.1 Quality level designators for encapsulated devices. The quality level designators for encapsulated dev ic es
that are applicable for this specification sheet from the lowest to the highest level are as follows: "JAN", "JANTX",
“JANTXV”, and "JANS".
* 1.5.1.2 Quality level designators for unencapsulated devices (die). The quality level designators for
unencapsulated devices (die) that are applicable for this specification sheet from the lowest to the highest level are as
follows: "JANHC" and "JANKC".
* 1.5.2 Radiation hardness assurance (RHA) designator. The RHA levels that are applicable for this specification
sheet from lowest to highest for JANS quality levels are as follows: "M", "D", "P", "L", “R”, “F’, “G”, and “H”.
* 1.5.3 Dev ice ty pe. The designation system for the device types covered by this specification sheet are as follows.
* 1.5.3.1 First number and first letter symbols. The semiconductors of this specification sheet use the first number
and letter symbols "2N".
* 1.5.3.2 Second number symbols. The second number symbols for the semiconductors covered by this
specification sheet are as foll ows: "2906".
* 1.5.4 Suffix symbols. The following suffix letters are incorporated in the PIN for this specification sheet.
A A “A” first suffix symbol indicates encapsulated devices. Applicable for the 2N2909A (see figure 1,
similar to TO-18).
UA
Indicates a surface mount 2N2906AUB, (see figure 2)
UB,
Indicates a surface mount 2N2906AUB, (seefigure 3)
HC and KC Unencapsulated die is as follows: B and D v ers ion die in ac cordance with figure 4 and figure 5.
* 1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QML-19500.
* 1.5.6 Die identifiers for unencapsulated devices (manufacturers and critical interface identifiers). The
manufact urer die ide ntifiers th at are app licable for this specif icat ion she et is "B" and “D”.
MIL-PRF-19500/291W
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NOTES:
1. Dimension are in inches.
2. Millime ter s are giv en for general inf or mat ion only .
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter
is uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12. Lead 1 = emitter, l ead 2 = base, lead 3 = collector.
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max.
FIGURE 1. Physical dimensio ns (sim ilar t o TO -18).
Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.33
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
6
LD
.016
.021
0.41
0.53
7,8
LL
.500
.750
12.70
19.05
7,8,13
LU
.016
.019
0.41
0.48
7,8
L1
.050
1.27
7,8
L2
.250
6.35
7,8
P
.100
2.54
Q
.030
0.76
5
TL
.028
.048
0.71
1.22
3,4
TW
.036
.046
0.91
1.17
3
r
.010
0.25
10
α
45° TP
45° TP
6
MIL-PRF-19500/291W
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Dimensions
Note
Symbol
Inches
Millimeters
Min
Max
Min
Max
BL
.215
.225
5.46
5.71
BL2
.225
5.71
BW
.145
.155
3.68
3.93
BW2
.155
3.93
CH
.061
.075
1.55
1.90
3
L3
.003
0.08
5
LH
.029
.042
0.74
1.07
LL1
.032
.048
0.81
1.22
LL2
.072
.088
1.83
2.23
LS
.045
.055
1.14
1.39
LW
.022
.028
0.56
0.71
LW2
.006
.022
0.15
0.56
5
Pin no.
1
2
3
4
Transistor
Collector
Emitter
Base
N/C
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension "CH" controls the overall package thickness. W hen a window lid is used, dimension "CH" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the
drawing.
* 5. Dimensions "LW2" minimum and "L3" minimum and the appropriate castellation length define an unobstructed
three-dimensional space traversing all of the ceramic layers in which a castellation was designed.
(Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "LW2" maximum
define the maximum width and depth of the castellation at any point on its surface. Measurement of these
dimensions may be made prior to solder dipping.
6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not
exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 2. Physical dimensions, surface mount (UA version).
UA
MIL-PRF-19500/291W
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FIGURE 3. Physical dimensio ns, surf a ce mount (UB, UBN, U BC , and UBCN versions).
MIL-PRF-19500/291W
7
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
BL
.115
.128
2.92
3.25
BW
.085
.108
2.16
2.74
BH
.046
.056
1.17
1.42
UB only, 4
BH
.046
.056
1.17
1.42
UBN only, 5
BH
.055
.069
1.40
1.75
UBC only, 6
BH
.055
.069
1.40
1.75
UBCN only, 7
CL
.128
3.25
CW
.108
2.74
LL1
.022
.038
0.56
0.97
3 PLS
LL2
.014
.035
0.356
0.89
3 PLS
LS1
.035
.040
0.89
1.02
LS2
.071
.079
1.80
2.01
LW
.016
.024
0.41
0.61
r
.008
0.20
6
r1
.012
0.30
8
r2
.022
0.56
UB & UBC only, 8
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. UB only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the metal lid.
5. UBN only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only.
6. UBC (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to
the lid.
7. UBCN (ceramic lid) only : Pa d 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with 3 pads only.
8. For design reference only.
9. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. Physical dimensio ns, surf a ce mount (UB, UBN, U BC , and UBCN versions) - Continued.
*
MIL-PRF-19500/291W
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1. Chip size: .023 x .023 inch ±.002 inch (0.584 mm x 0.584 mm ±0.05 08 mm).
2. Chip thickness: .010 ±.0015 inch (0.25 4 m m ±0.038 m m).
3. Top metal: Aluminum 15,000 Å mi ni mum , 18,00 0 Å nominal.
4. Back metal: A. Al/Ti/Ni/Ag 15kÅ/5kÅ/10kÅ/10kÅ.
B. Gold 2.5 kÅ minimu m, 3.0 kÅ nominal.
C. Eutectic Die Mount - No metal.
5. G lassivation: SI3N4 2kÅ minimum, 2.2k nominal.
6. Backside: Collector.
7. Bonding pad: B = .0042 x .0042 inch (0.107 mm x 0.107 mm).
E = .0042 x .0042 inch (0.107 mm x 0.107 mm).
FIGURE 4. JANHC and JANKC (B-ver sion) die di men sio ns.
MIL-PRF-19500/291W
9
E
B
1. Die size: .020 x .020 inch square (0.508 mm x 0.508 mm).
2. Die thickness: .008 ±.0016 inch (0.203 mm ±0.041 mm).
3. Base pad: .004 x .004 inch (0.101 mm x 0.101 mm).
4. Emitter pad: .004 x .004 inch (0.101 mm x 0.101 mm).
5. Back metal Gold, 6,500 ±1,950 Å.
6. Top metal: Aluminum, 20,000 ±2,000 Å.
7. Back side: Collector.
8. Glassivation: SiO2, 7,500 ±1,500 Å.
FIGURE 5. JANHC and JANKC (D-v ersion) die dim en sion s.
MIL-PRF-19500/291W
10
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Govern ment documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Copies of these documents are available online at https://assist.dla.mil/quicksearch).
2.3 Order of prece den ce. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIRE MENTS
3.1 General. The i ndividual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract aw ard (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and defi niti ons used herein shall be as
specified in MIL-PRF-19500 and as follows.
PCB Printed circuit board
RθJA Thermal resistance junction to ambient.
RθJC Thermal resi stan ce jun cti on to cas e.
RθJSP(AM) Thermal resistance junction to solder pads (adhesive mount to PCB).
RθJSP(IS) Thermal resistance junction to solder pads (infi nite sink mount to PCB).
TSP(AM) T emperatur e of solder pad s (adhes iv e mount to PCB).
TSP(IS) Temperature of solder pads (infini t e sin k mount to PCB).
UA, Surface mount case outlines (see figure 2).
UB, UBC Surface mount case outlines (see figure 3).
UBN, UBCN Surface mount case outlines (see figure 3).
3.4 Interface and physical dim ensi ons . The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5 herein. Epoxy die attach may be used when a moisture monitor plan
has been submitted and approved by the qualifying activity.
MIL-PRF-19500/291W
11
3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500. Where a choice of lead finish is
desired, it shall be specified in the acquisition document (see 6.2).
3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test
levels shall be as defined in MIL-PRF-19500.
3.6 Electr ica l perf or man ce ch aract er istics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requi rements. The electrical test requirements shall be the subgroups specified in table I herein.
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB, UBC, UBN, and UB CN suffix
packages. Marking on the UB, UBC, UBN, and UBCN packages sh a ll co n sist of an abbreviated part number, the
date code, and the manufacturer’s symbo l or log o. The prefixes JAN, JANTX, JANTXV, and JANS can be
abbreviated as J, JX, JV, and J S respectively. The "2N" prefix and the "AUB" and “AUBC” suffix can also be omitted.
The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N”
identifier (depending upon degree of abbreviation required).
3.9 Workmanship. Semiconductor devices Transistor, PNP, Silicon, Switching shall be processed in such a
manner as to be uniform in qual ity and shall be free from other defects that will affect life, serviceability, or
appearance.
4. VERIFICATION
4.1 Clas sifi cat ion of insp ect io ns. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I, II, and III).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified
herein.
4.2.1 JANHC and JANKC qualific ation. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
4.2.2 Gro up E qualifi cat ion. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspect ion lot of this revision to maintain qualification.
MIL-PRF-19500/291W
12
* 4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV of MIL-
PRF-19500, and as specified herein. The followi ng measurements shall be made in accordance with table I herein.
Devices that ex ceed the limit s of table I herein shall not be acceptable.
Screen
Measurement
JANS level
JANTXV and JANTX level
1b
Required
Required (JANTXV only)
2
Optional
Optional
3a
3b
(1) 3c
Required
Not applicable
Required method 3131 of MIL-STD-750
Required
Not applicable
Required method 3131 of MIL-STD-750
4
Required
Optional
5
Required
Not required
6
Not applicable
Not applicable
8
Required
Not required
9
ICBO2, hFE4, read and record
Not applicable
10
24 hours minimum
24 hours minimum
11
ICBO2; hFE4;
∆ICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater.
∆hFE4 = ±15 percent
ICBO2, hFE4
12
See 4.3.2
See 4.3.2
(2) 13
Subgroups 2 and 3 of table I herein;
∆ICBO2 = 100 percent of initial value or 5
nA dc, whichever is greater;
∆hFE4 = ±15 percent
Subgroup 2 of table I herein;
∆ICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater;
∆hFE4 = ±15 percent
15
Required
Not required
16
Required
Not required
(1) Shall be performed anytime after temper a ture cy cli ng, sc reen 3a; TX and TXV do not need to be repeated in
screening requirements.
* (2) Thermal impedance (ZθJX) is not required in screen 13.
MIL-PRF-19500/291W
13
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in durat ion for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.3.2 Power burn-in conditions. Power burn-in conditions ar e as follow s: VCB = -10 to -30 V dc. Power shall be
applied to ac hieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum, TA ambi ent ra ted as
defined in 1.3. With approval of the qualifying activity and preparing activity, alt ern ate bur n -in criteria (hours, bias
conditions, TJ, and mounting conditions) for JANTX and JANTXV quality levels may be used. A justification
demonstrating equivalence is required. In addition, the manu facturing sit e’ s burn-in data and performance history will
be essential criteria for burn-in modification approval.
4.3.3 Thermal impedance measurements). The thermal impedance measurements shall be performed in
accordance with method 3131 of MIL-STD-750 using the gui d elin es in that meth od for deter mini ng IM, IH, tH, and tMD
(and VC where appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and subgroup 2 of table I
shall comply with the thermal impedance graph s in figur es 1 2, 13, 14, 15, and 16 (less than or equal to the curve
value at the same tH time) and shall be less than the proc ess determined statistical maximum limit as outlined in
method 3131. See table III, subgroup 4 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only
(table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in
accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Gro up B inspe ctio n. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup test ing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)
and delta requirements shall be in accordance with table I, subgr ou p 2 and 4.5.3 herein. See 4.4.2.2 herein for JAN,
JANTX, and JANTXV, group B testing. Electrical measurements (end-points) and delt a requir ements for JAN,
JANTX, and JANTXV, shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and
4.5.3 herein.
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup Method Condition
B4 1037 VCB = -10 to -30 V dc. Adjus t dev ice current, or pow er, to achiev e a minim um
∆TJ of 100°C.
B5 1027 VCB = -10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure
occurs, resubmission shall be at the test conditions of the original sample.)
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,
table E-VIa, adjust TA or PD to achi ev e TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to achiev e a
TJ = +225°C minimum.
B6 3131 RθJA, RθJC only (see 1.3).
MIL-PRF-19500/291W
14
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be us ed for each step. In the
event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastr ophi c
failures during conformance inspection shall be analyzed to the extent possible to identify root cause and corrective
action. Whenever a failure is identified as wafer lot and wafer processing related, the entire wafer lot and related
devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to
eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate the
failure mode.
Step Method Condition
1 1026 Steady-state life: 1,0 00 hours mini mu m, VCB = -10 dc, power and ambient shall be applied to
achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time
decreased so long as the devices are stressed for a total of 45,000 device hours minimum,
and the actual time of test is at least 340 hours.
2 1048 Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
n = 45 devices, c = 0.
3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX,and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Gro up C inspec tion . Group C inspection shall be conducted in accordance with the conditions specified for
subgroup test ing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 ( JAN, JANTX, and JANTXV)
herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with
table I, subgroup 2 and 4.5.3 herein.
4.4.3.1 Group C inspection, table E-VII (JANS) of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).
* C6 1026 1,000 hours, VCB = -10 V dc, power and ambient temperature shall be applied to
the device to achieve TJ = +150°C minimum, and mi nim um p ower dissipat ion of
75 percent of max rated PT (see 1.3 herein); n = 45, c = 0. The sample size may
be increased and the test time decreased as long as the dev i ces are stre sse d for
a total of 45,000 device hours minimum, and the actual time of test is at least 340
hours.
MIL-PRF-19500/291W
15
4.4.3.2 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E, (not applicable for UA, UB, UBC, UBN, and UBCN devices).
C5 3131 RθJA RθJC only (see 1.3).
C6 Not applicable.
4.4.3.3 Group C sample selection. Samples for steps in group C shall be chosen at random from any inspection
lot containing the intended package type and lead finish procured to the same specif ica tio n which is submitted to and
passes table I tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the
intended package type shall be considered as complying with the requirements for that subgroup.
4.4.4 Gro up D inspec tion . Conformance inspection for hardness assured JANS and JANTXV types shall include
the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other
subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to
the fluence profile.
* 4.4.5 Gro up E inspe ctio n. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified in table III herein. Delta
measurements shall be in accordance with the applicable steps of 4.5.3.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pul se mea sure ment s. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Symbol
Limit
Method
Conditions
1
Collector-base cutoff
current
3036
Bias condition D,
VCB = -50 V dc
∆ICB02
(1)
100 percent of initial
value or 10 nA dc,
whichever is greater.
2
Forward current
transfer ratio
3076
VCE = -10 V dc;
IC = -150 mA dc;
pulsed see 4.5.1
∆hFE4
(1)
±25 percent change
from initial reading.
(1) Devices which exceed the table I limits for this test shall not be accepted.
MIL-PRF-19500/291W
16
TABLE I. Group A inspection.
Inspecti on 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
inspection 3/
2071
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistanc e to solvents
3/ 4/ 5/
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles. n = 22
devices, c = 0
Hermetic seal 4/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Electrical measurements
4/
Table I, subgroup 2
Bond strength 3/ 4/
2037
Precondition T A = +250°C at t = 24 hours
or TA = +300°C at t = 2 hours
n = 11 wires, c = 0
Decap internal visual
(design verification) 4/
2075
n = 4 devices, c = 0
Subgroup 2
Thermal impedance 6/
3131
See 4.3.3
ZθJX
°C/W
Collector to base cutoff
current
3036
Bias condition D; VCB = -60 V dc
ICBO1
-10
µA dc
Cutoff current, emitter to
base
3061
Bias condition D; VEB = -5 V dc
IEBO1
-10
µA dc
Breakdown voltage,
collector to emitter
3011
Bias condition D; IC = -10 mA dc; pulsed
(see 4.5.1)
V(BR)CEO
-60
V dc
Collector to emitter
cutoff current
3041
Bias condition C; VCE = -50 V dc
ICES
-50
nA dc
Collector to base cutoff
current
3036
Bias condition D; VCB = -50 V dc
ICBO2
-10
nA dc
Emitter to base cutoff
current
3061
Bias condition D; VEB = -4 V dc
IEBO2
-50
nA dc
See footnotes at end of table.
MIL-PRF-19500/291W
17
TABLE I. Group A inspection - Continued.
Inspecti on 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward-current transf er
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
3076
VCE = -10 V dc; IC = -0.1 mA dc
hFE1
40
75
Forward-current transf er
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
3076
VCE = -10 V dc; IC = -1.0 mA dc
hFE2
40
100
175
450
Forward-current transf er
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
3076
VCE = -10 V dc; IC = -10 mA dc
hFE3
40
100
Forward-current transf er
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
3076
VCE = -10 V dc; IC = -150 mA dc;
pulsed (see 4.5.1)
hFE4
40
100
120
300
Forward-current transf er
ratio
2N2906A, L, UA, UB, UBC
UBN, and UBCN
2N2907A, L, UA, UB, UBC
UBN, and UBCN
3076
VCE = -10 V dc; IC = -500 mA dc;
pulsed (see 4.5.1)
hFE5
40
50
Collector-emitter saturation
voltage
3071
IC = -150 mA dc; IB = -15 mA dc, pulsed
(see 4.5.1)
VCE(sat)1
-0.4
V dc
Collector-emitter saturation
voltage
3071
IC = -500 mA dc; IB = -50 mA dc; pulsed
(see 4.5.1)
VCE(sat)2
-1.6
V dc
Base-emitt er saturati on
voltage
3066
Test condition A; IC = -150 mA dc;
IB = -15 mA dc; pulsed (see 4.5.1)
VBE(sat)1
-0.6
-1.3
V dc
Base-emitt er saturati on
voltage
3066
Test condition A; IC = -500 mA dc;
IB = -50 mA dc; pulsed (see 4.5.1)
VBE(sat)2
-2.6
V dc
See footnotes at end of table.
MIL-PRF-19500/291W
18
TABLE I. Group A inspection - Continued.
Inspecti on 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 3
High temperature operation
TA = +150
°
C
Collector to base cutoff
current
3036
Bias condition D; VCB = -50 V dc
ICBO3
-10
µA dc
Low temperature operat i on
Forward-current transf er
ratio
2N2906A, L, UA, UB, UBC,
UBN, and UBCN
2N2907A, L, UA, UB, UBC,
UBN, and UBCN
3076
TA = -55°C
VCE = -10 V dc; IC = -10 mA dc
hFE6
20
50
Subgroup 4
Small-signal short-circuit
forward current trans f er ratio
2N2906A, L, UA, UB, UBC,
UBN, and UBCN
2N2907A, L, UA, UB, UBC,
UBN, and UBCN
3206
VCE = -10 V dc; IC = -1 mA dc;
f = 1 kHz
hfe
40
100
Magnitude of small- signal
short- circuit forward current
transf e r ratio
3306
VCE = -20 V dc; IC = -20 mA dc;
f = 100 MHz
|hfe|
2.0
Open circuit output
capacitance
3236
VCB = -10 V dc; IE = 0;
100 kHz ≤ f ≤ 1 MHz
Cobo
8
pF
Input capacitance (output
open- circuited)
3240
VEB = -2.0 V dc; IC = 0;
100 kHz ≤ f ≤ 1 MHz
See 4.5.2.
Cibo
30
pF
Saturated turn-on time
(See figure 16)
ton
45
ns
Saturated turn-off time
(See figure 17)
toff
300
ns
Subgroups 5, 6, and 7
Not applicable
See footnotes at end of table.
MIL-PRF-19500/291W
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TABLE I. Group A inspection - Continued.
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed test subgroup of table I, double the sample size of the failed test or sequence of tests.
A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun
upon submiss ion.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
6/ This test required for the following end-point measurements only:
Group B, subgroup 3, 4, and 5 (JANS).
Group B, step 1 (TX and TXV).
Group C, subgroup 2 and 6.
MIL-PRF-19500/291W
20
TABLE II. Group D inspection.
Inspecti on 1/ 2/ 3/
MIL–STD–750
Limit
Unit
Method
Conditions
Symbol
Min
Max
Subgroup 1 4/
Neutron irradiati on
1017
Neutron exposure VCES = 0 V
Collector to base cutoff current
3036
Bias condition D; VCB = -60 V dc
ICBO1
-20
µA dc
Cutoff current, emitter to base
3061
Bias condition D; VEB = -5 V dc
IEBO1
-20
µA dc
Breakdown voltage, collector to
emitter
3011
Bias condition D; IC = -10 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
-60
V dc
Collector to emitter cutoff
current
3041
Bias condition C; VCE = -50 V dc
ICES
-100
nA dc
Collector to base cutoff current
3036
Bias condition D; VCB = -50 V dc
ICBO2
-20
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = -4 V dc
IEBO2
-100
nA dc
Forward-current transf er ratio
3076
VCE = -10 V dc; IC = -0.1 mA dc
[hFE1] 5/
M through H2N2906A
[20]
M through H2N2907A
[37.5]
Forward-current transf er rat i o
3076
VCE = -10 V dc; IC = -1.0 mA dc
[hFE2] 5/
M through H2N2906A
[20]
175
M through H2N2907A
[50]
450
Forward-current transf er ratio
3076
VCE = -10 V dc; IC = -10 mA dc
[hFE3] 5/
M through H2N2906A
[20]
M through H2N2907A
[50]
Forward-current transf er ratio
3076
VCE = -10 V dc; IC = -150 mA dc
[hFE4] 5/
M through H2N2906A
[20]
120
M through H2N2907A
[50]
300
Forward-current transf er ratio
3076
VCE = -10 V dc; IC = -500 mA dc
[hFE5] 5/
M through H2N2906A
[20]
M through H2N2907A
[25]
Collector-e mitter saturation
voltage
3071
I
C
= -150 mA dc; I
B
= -15 mA d c
V
CE(sat)1
-.46
V dc
Collector-e mitter saturation
voltage
3071
I
C
= -500 mA dc; I
B
= -50 mA d c
V
CE(sat)2
-1.84
V dc
Base-emitt er saturati on voltage
3066
Test condition A; IC = -150 mA dc;
IB = -15 mA dc; pulsed (see 4.5.1)
VBE(sat)1
-0.6
-1.5
V dc
Base-emitt er saturati on voltage
3066
Test condition A; IC = -500 mA dc;
IB = -50 mA dc; pulsed (see 4.5.1)
VBE(sat)2
-3.0
See footnotes at end of table.
MIL-PRF-19500/291W
21
TABLE II. Group D inspection - Continued.
Inspecti on 1/ 2/ 3/
MIL–STD–750
Limit
Unit
Method
Conditions
Symbol
Min
Max
Subgroup 2
Total dose irradiation
1019
Gamma exposure VCES = -48 V
Collector to base cutoff current
3036
Bias condition D; VCB = -60 V dc
ICBO1
-20
µA dc
Cutoff current, emitter to base
3061
Bias condition D; VEB = -5 V dc
IEBO1
-20
µA dc
Breakdown voltage, collector to
emitter
3011
Bias condition D; IC = -10 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
-60
V dc
Collector to emitter cutoff current
3041
Bias condition C; VCE = -50 V dc
ICES
-100
nA dc
Collector to base cutoff current
3036
Bias condition D; VCB = -50 V dc
ICBO2
-20
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = -4 V dc
IEBO2
-100
nA dc
Forward-current transf er ratio
3076
VCE = -10 V dc; IC = -0.1 mA dc
[hFE1] 5/
M through H2N2906A
[20]
M through H2N2907A
[37.5]
Forward-current transf er rat i o
3076
VCE = -10 V dc; IC = -1.0 mA dc
[hFE2] 5/
M through H2N2906A
[20]
175
M through H2N2907A
[50]
400
Forward-current transf er rat i o
3076
V
CE
= -10 V dc; I
C
= -10 mA dc
[hFE3] 5/
M through H2N2906A
[20]
M through H2N2907A
[50]
Forward-current transf er rat i o
3076
VCE = -10 V dc; IC = -150 mA dc
[hFE4] 5/
M through H2N2906A
[20]
120
M through H2N2907A
[50]
300
Forward-current transf er rat i o
3076
V
CE
= -10 V dc; I
C
= -500 mA dc
[hFE5] 5/
M through H2N2906A
[20]
M through H2N2907A
[25]
Collector-e mitter saturation
voltage
3071
I
C
= -150 mA dc; I
B
= -15 mA d c;
V
CE(sat)1
-.46
V dc
Collector-e mitter saturation
voltage
3071
I
C
= -500 mA dc; I
B
= -50 mA d c;
V
CE(sat)2
-1.84
V dc
See footnotes at end of table.
MIL-PRF-19500/291W
22
TABLE II. Group D inspection - Continued.
Inspecti on 1/ 2/ 3/
MIL–STD–750
Limit
Unit
Method
Conditions
Symbol
Min
Max
Subgroup 2 - Continued.
Base-emitt er saturati on voltage
3066
Test condition A; IC = -150 mA dc;
IB = -15 mA dc; pulsed (see 4.5.1)
VBE(sat)1
-0.6
-1.5
V dc
Base-emitt er saturati on voltage
3066
Test condition A; IC = -500 mA dc;
IB = -50 mA dc; pulsed (see 4.5.1)
VBE(sat)2
-3.0
1/ Tests to be performed on all devices rec eiving radiation exposure.
2/ For sampling plan, see MIL-PRF-19500.
3/ Electrical characteristics apply to the corresponding AL, UA, UB, UBC, UBN, and UBCN suffix versions unless
otherwise noted.
4/ See 6.2.f herein.
5/ See method 1019, of MIL–STD–750, for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-
and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE]
value can never exceed the pre-radiation minimum hFE that it is based upon.
MIL-PRF-19500/291W
23
TABLE III. Group E inspection (all quality levels) - for qualification only.
Inspection
MIL–STD–750
Qualification
Method
Conditions
Subgroup 1
Temperature cycling
(air to air)
1051
Test condition C, 500 cycles.
45 devices
c = 0
Hermetic seal
Fine leak
Gross leak
1071
Electrical measurements
See table I, subgroup 2 and 4.5.3 herein.
Subgroup 2
Intermittent life
1037
VCB = -10 V dc, 6,000 cycles. Adjust device current , or
power, to achieve a minimum
∆
TJ of 100
°
C.
45 devices
c = 0
Electrical measurements
See table I, subgroup 2 and 4.5.3 herein.
Subgroup 4
Thermal resistanc e
3131
RθJSP(IS) may be calculated but shall be measured once
in the same package with a similar die size to confirm
calculati ons (m ay apply to multiple slash sheets).
RθJSP(AM) need be calculated only.
15 devices
c = 0
Thermal impedance
curves
See MIL-PRF-19500, table E-IX, group E, subgroup 4.
Sample size
N/A
Subgroup 5
Not applicable
Subgroup 6
ESD
1020
11 devices
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition B.
MIL-PRF-19500/291W
24
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their appl ication.
FIGURE 6. Temperature-power derating for 2N2906A, 2N2906AL, 2N2907A and 2N2907AL
(RθJA) leads .125 inch (3.18 mm) PCB (TO-18).
MIL-PRF-19500/291W
25
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their appl ication.
FIGURE 7. Temperature-power derating for 2N2906A, 2N2906AL, 2N2907A and 2N2907AL
(RθJC), base case mount (TO -18).
Temperature-Power Derating Curve
Tc =+25 °C; 2N2906A, 2N2906Al, 2N2907A, and 2N2907A L
MIL-PRF-19500/291W
26
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their appl ication.
FIGURE 8. Temperature-power derating for 2N2906AUA and 2N2907AUA (RθJSP(IS)), infinite sink 4-points.
MIL-PRF-19500/291W
27
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their appl ication.
FIGURE 9. Temperature-power derating for 2N2906AUA and 2N2907AUA (RθJSP(AM))
4-point solder pad (adhesive mount to PCB).
Temperature-Power Derating Curve
TSP(AM) = 25°C 2N2906AUA, and 2N2907AUA
MIL-PRF-19500/291W
28
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their appl ication.
FIGURE 10. Temperature-pow er derating for 2N2906AUB, UBC, UBN, and UBCN
2N2907AUB, UBC,UBN, and UBCN (RθJSP(IS)) infinite sink 3-point.
Temperature-Power Deratin g C urv e
TSP(is) = 25°C 2N2906AUB, 2N2906AUBC, 2N2907AUB, and
2N2907AUBC
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FIGURE 11. Thermal impedance graph (RθJA) for 2N2906A, 2N2906AL, 2N2907A, and 2N2907AL (TO-18).
Maximum Thermal Impedance
2N2906A and 2N2907A TO-18 package with 0.125” lead mount to PCB
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FIGURE 12. Thermal impedance graph (RθJC) for 2N2906A, 2N2906AL, 2N2907A, and 2N2907AL (TO-18).
Maximum Thermal Impedance
2N2906A and 2N2907A TO-18 package with case base in copper sink.
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FIGURE 13. Thermal impedance graph (RθJSP(IS)) for 2N906A and 2N2907A (UA).
Maximum Thermal Impedance
2N2906A and 2N2907A (UA) 4 points solder pads (infinite sink mount to PCB).
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FIGURE 14. Thermal impedance graph (RθJSP(AM)) for 2N906A and 2N2907A (UA).
Maximum Thermal Impedance
2N2906A and 2N2907A (UA) 4 points solder pads (adhesive mount to PCB).
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FIGURE 15. Thermal impedance graph (RθJSP(IS)) for 2N906A and 2N2907A (UB, UBC, UBN, and UBCN).
Maximum Thermal Impedance
2N2906A and 2N2907A (UB and UBC) 3 points solder pads (infinite sink mount) to PCB.
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NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 perc ent and the generator
source impedance shall be 50 ohms.
2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.
FIGURE 16. Saturated turn-on switching time test circuit.
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 perc ent and the generator
source impedan ce sha ll be 50 ohms.
2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.
3. Alternate test point for high impe dan ce atten uating probe.
FIGURE 17. Saturated turn-off switching time test circuit.
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5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Inten ded use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acqui sit ion requ ir e ment s. Acquisition documents should specify the following:
a. Title, number, and date of this specif ica tio n.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. The complete Part or Identifying Number (PIN), see 1.2.
e. For die acquisition, the letter version must be specified (see figures 5 and 6).
f. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If subgroup 1
testing is desired, it must be speci fied in the cont rac t.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tes ted f or qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
DLA Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.dla.mil.
6.4 Supersession information. Devices covered by this specification supersede the manufacturers' and users' Part
or Identifying Number (PIN). The term Part or Identifying Number (PIN) is equivalent to the term part number which
was previously used in this specification. This information in no way implies that manufacturers' PIN's are suitable as
a substitute for the military PIN.
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6.5 Suppliers and PINs for JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the
applicable letter version (example JANHCB2N2907A) will be identified on the QML.
Die ordering information (1) (2)
PIN
Manufacturer
43611
34156
2N2906A
2N2907A
JANHCB2N2906A
JANHCB2N2907A
JANHCD2N2906A
JANHCD2N2907A
(1) For JANKC level, replace JANHC with JANKC.
(2) JANHCA, JANKCA, JANHCC, and JANKCC vers ions are obsolete.
* 6.6 PIN constr u ctio n ex ample .
* 6.6.1 Encapsulated devices The PINs for encapsulated devices are constructed using the following form.
JANS M 2N 2906A UB
JAN certification mark and quality level (see 1.5.1.1)
RHA designator (see 1.5.2)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
Suffix symbol (see 1.5.4)
* 6.6.2 Unencapsulated devices. The PINs for un-encapsulated devices are constructed using the following form.
JANHC B M 2N 2906A
JAN certification mark and quality level (see 1.5.1.2)
Die identifier for unencapsulated devices (see 1.5.6)
RHA designator (see 1.5.2)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
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* 6.7 List of PINs.
* 6.7.1 PINs for encapsulated devices. The following is a list of possible PINs for encapsulated devices available on
this specific atio n sheet .
PINs for type 2N2906A and 2N2907A.
JAN2N2906A JANTX2N2906A JANTXV2N2906A JANS#2N2906A
JAN2N2906AL
JANTX2N2906AL
JANTXV2N2906AL
JANS#2N2906AL
JAN2N2907A
JANTX2N2907A
JANTXV2N2907A
JANS#2N2907A
JAN2N2907AL
JANTX2N2907AL
JANTXV2N2907AL
JANS#2N2907AL
JAN2N2906AUA
JANTX2N2906AUA
JANTXV2N2906AUA
JANS#2N2906AUA
JAN2N2907AUA
JANTX2N2907AUA
JANTXV2N2907AUA
JANS#2N2907AUA
JAN2N2906AUB JANTX2N2906AUB JANTXV2N2906AUB JANS#2N2906AUB
JAN2N2906AUBC JANTX2N2906AUBC JANTXV2N2906AUBC JANS#2N2906AUBC
JAN2N2907AUB
JANTX2N2907AUB
JANTXV2N2907AUB
JANS#2N2907AUB
JAN2N2907AUBC
JANTX2N2907AUBC
JANTXV2N2907AUBC
JANS#2N2907AUBC
JAN2N2906AUBN
JANTX2N2906AUBN
JANTXV2N2906AUBN
JANS#2N2906AUBN
JAN2N2906AUBCN
JANTX2N2906AUBCN
JANTXV2N2906AUBCN
JANS#2N2906AUBCN
JAN2N2907AUBN JANTX2N2907AUBN JANTXV2N2907AUBN JANS#2N2907AUBN
JAN2N2907AUBCN JANTX2N2907AUBCN JANTXV2N2907AUBCN JANS#2N2907AUBCN
* (1) The number sign (#) represent one of eight RHA designators available (M, D, P, L, R, F, G, or H). The PIN is
also available without a RHA designator.
* 6.7.2 List of PINs for unencapsulated devices. The following is a list of possible PINs available on t his
specificat ion she et.
PINs for type 2N2906A and 2N2907A.
JANHCB2N2906A
JANHCD2N2906A
JANKCB2N2907A
JANKCDX2N2907A
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6.8 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in thes e notations. Bidders and contractors are cautioned to evaluate the
requireme nts of this document based on the entire content irrespective of the marginal notations and relationship to
the previous issue.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 85 (Project 5961-2016-038)
NASA - NA
DLA - CC
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil.
