COMSET SEMICONDUCT ORS 1/4
2N6253 - 2N6254 - 2N6371
HIGH POWER SILICON NPN TRANSISTORS
The 2N6253, 2N6254, and 2N637 1 are silicon NPN transistors intended for a wide
variety of high-power applications. The construction of these devices renders them
highly resistant to second breakdown over a wide range of operating conditions.
These devices differ in maximum ratings for voltage and power dissipation. All are
supplied in JEDEC TO-3 hermetic steel packages.
ABSOLUTE MAXIMUM R ATINGS
Symbol Ratings Value Unit
2N6253 45
2N6254 80
VCEO(SUS) Collector-Emitter Voltage 2N6371 40 V
2N6253 55
2N6254 100
VCBO Collector-Base Voltage (*) 2N6371 50 V
2N6253 55
2N6254 85
VCER(SUS) Collector-Emitter Voltage
RBE=100Ω2N6371 45 V
2N6253 55
2N6254 90
VCEV(SUS) Collector-Emitter Voltage
VBE=-1.5V 2N6371 50 V
2N6253 5
2N6254 7
VEBO Emitter-Base Voltage 2N6371 5V
ICCollector Current 2N6253
2N6254
2N6371 15 A
IBBase Current 2N6253
2N6254
2N6371 7A
COMSET SEMICONDUCT ORS 2/4
2N6253 - 2N6254 - 2N6371
Symbol Ratings Value Unit
2N6253 115
2N6254 150
< 25°C 2N6371 117 Watts
PTOT Power Dissipation
> 25°C 2N6253
2N6254
2N6371
Derate Linearly to
200°C
TJJunction Temperature
TSStorage Temperature
2N6253
2N6254
2N6371 -65 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
2N6253 1.5
2N6254 1.17
RthJ-C Thermal Resistance, Junction to Case 2N6371 1.5 °C/W
ELECTRICAL CHARACTE RISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
IC=3 A, IB=0.3 --1
IC=15 A, IB=5 2N6253 --4
IC=5 A, IB=0.5 --0.5
IC=15 A, IB=3 2N6254 --4
IC=8 A, IB=0.8 --1.5
VCE(SAT) Collector-Emitter Voltage (*)
IC=16 A, IB=4 2N6371 --4
V
VCE=25 V 2N6253
2N6371 --1.5
ICEO
Collector-Emitter Cutoff
Current VCE=60 V 2N6254 --1.0
mA
VEB=-5 V 2N6253
2N6371 --10
IEBO Emitter-Base Cutoff Current VEB=-7 V 2N6254 0.5 mA
COMSET SEMICONDUCT ORS 3/4
2N6253 - 2N6254 - 2N6371
Symbol Ratings Test Condition(s) Min Typ Mx Unit
VCE=40 V
VBE=-1.5 V 2N6371 --10
VCE=50 V
VBE=-1.5 V 2N6253 --10
TC=150°C
VCE=100 V
VBE=1.5 V 2N6254 --5.0
mA
VCE=45 V
VBE=-1.5 V 2N6371 --2.0
VCE=55 V
VBE=-1.5 V 2N6253 --2.0
ICEX Collector Cutoff Current
TC=25°C
VCE=100 V
VBE=1.5 V 2N6254 --0.5
2N6253 45 - -
2N6254 80 - -
VCEO(SUS) Collector-Emitter Sustaining
Voltage (*) IC=0.2 A, IB=0 A
2N6371 40 - - V
2N6253 55 - -
2N6254 85 --
VCER(SUS)
Collector-Emitter Sustaining
Voltage (*)
RBE=100ΩIC=0.2 mA 2N6371 45 --V
2N6253 55 - -
2N6254 90 - -
VCEV(SUS) Base-Emitter Voltage (*) IC=0.1 A, VBE=-1.5
V2N6371 50 - - V
VCE=4 V, IC=3 A 2N6253 --1.7
VCE=2 V, IC=5 A 2N6254 --1.5
VBE Base-Emitter Voltage (*) VCE=4 V, IC=16 A 2N6371 --4V
VCE=4 V, IC=3 A 20 - 70
VCE=4 V, IC=15 A 2N6253 3--
VCE=2 V, IC=5 A 20 - 70
VCE=4 V, IC=15 A 2N6254 5--
VCE=4 V, IC=8 A 15 - 60
hFE Static Forward Current
transfer ratio (*)
VCE=4 V, IC=16 A 2N6371 4--
-
hfe Small Signal Current Gain VCE=4 V, IC=1 A,
f=1 kHz
2N6253
2N6254
2N6371 10 - - -
2N6253 ---
2N6254 ---
fTTransition Frequency VCE=4 V, IC=1 A 2N6371 800 - - kHz
VCE=45 V 2N6253 2.55 - -
2N6254 1.87 - -
Is/b
Second Breakdown
Collector Current
tp=1s, non rep. VCE=40 V 2N6371 2.9 - - A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
COMSET SEMICONDUCT ORS 4/4
2N6253 - 2N6254 - 2N6371
MECHANI CAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,45 1
B 38,8 1,52
C 30,09 1,184
D 17,11 0,67
E 9,78 0,38
G 11,09 0,43
H 8,33 0,32
L 1,62 0,06
M 19,43 0,76
N 1 0,04
P 4,08 0,16
Pin 1 : Base
Pin 2 : Emitter
Case : Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no respons abili ty
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without not ice
