Maximum Ratings, According to IEC Publication No. 134
Steady state Power dissipation (l = 10 mm)
Operating temperature range
Storage temperature range
Ppp
PM(AV)
IFSM
Tj
Tstg
400 W
1 W
40 A
– 65 to + 175 °C
– 65 to + 175 °C
Electrical Characteristics at Tamb = 25 °C
Rthj-l Max. thermal resistance (l = 10 mm.) 60 °C/W
VFMax. forward voltage drop at IF = 25 A 3.5 V
Peak pulse power with 10/1000 µs
exponential pulse
Non repetitive surge peak forward
current (t = 8.3 msec.)
(Jedec Method)
(Note 1)
Sep-08
(1): Tested with pulses.
P4KE
400W Unidirectional Transient Voltage Suppressor Diodes400W Unidirectional Transient Voltage Suppressor Diodes
Pulse test: tp £ ms; d <2%
Type
Maximum Reverse
Leakage Current
at
Unidirectional (µA) (V) Min. Nom. Max. (mA)
(1)
IRM
IR
at
(V)
Breakdown Voltage
Max. Clamping Voltage
VBR VCL at Ipp
VRM max. 1ms. Expo.
(V) (A)
P4KE18 5 14.5 16.2 18 19.8 1 26.5 15.1
P4KE18A 5 15.3 17.1 18 18.9 1 25.2 16
P4KE550 1 495 550 610 671 0.1 760 0.4
P4KE200A 5 171 190 200 210 1 274 1.5
• Glass passivated junction
• Low Capacitance AC signal protection
• Response time typically < 1 ns.
• Molded case
• The plastic material carries
U/L recognition 94 V-0
• Terminal: Axial leads
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 350 °C.
3. Max. soldering time, 3.5 sec.
4. Do not bend lead at a point closer than
2 mm. to the body.
Dimensions in mm. DO-41
(Plastic)
R
Peak Pulse
Power Rating
At 1ms. Exp.
400 W
ø0.8±0.05
58.5±0.5
5+0.2
-0
ø2.6±0.1
0
25
50
75
100
0
DERATING CURVE
PULSE RATING CURVE
P4KE
Sep-08
100
50
Ipp
1t - time
1 ms
10 µs
Ipp - Peak Pulse Current - % Ipp
Ipp/2
PPP, Peak Pulse Power in % of 25 °C.
Temperature in °C
25 50 75 100 125 150 175
Pulse wave form 10/1000
100ns
105
104
103
102
1µs 10µs 100µs 1ms
Pulse Time - t
Cj, Junction Capacitance (pF)
TYPICAL JUNCTION CAPACITANCE
Measured at VBR and 1MHz.
VBR - Breakdown voltage (V)
103
102
101
104
103
102
10
Ppp, Peak Pulse Power (W)
Rating And Characteristic Curves
125
