TYPES TIP515 THRU TIP518 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS e 120 V and 150 V Min V(BR)CEO @ 12-A Rated Continuous Collector Current e 80 Watts at 100C Case Temperature e Min fy of 70MHzat5V,1A mechanical data TIPSIE THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE ALL JEDEC TO-3 DIMENSIONS AND NOTES ARE APPLICABLE 1,573 MAXe sae7 0.450 0.312 MIN Ti 0.525 R MAX 0.250 250 | 2.043 nia 2 LEADS ewe 1.050 MAX ghe 0.225 +}--:| <C> 4 ee 9705 o00 188 MAX L 0.420 ROTH ENDS 0135 MAX SEATING PLANE CASE TEMPERATURE 1 BASE MEASUREMENT POINT - ALL DIMENSIONS ARE IN INCHES TIPG17 TiP618 ALL TERMINALS ARE ELECTRICALLY INSULATED FROM THE CASE ALL JEDEC TO-61 DIMENSIONS AND NOTES ARE APPLICABLE CASE TEMPERATURE MEASURE- MENT POINT IS UNDERSIOE OF FLAT SURFACE WITHIN 0.125" FROM STUD ALL DIMENSIONS ARE IN INCHES absolute maximum ratings at 25C case temperature (unless otherwise noted} TIP515 TIPS16 TIP517 TIP518 Collector-Base Voltage Se ee ee Collector-Emitter Voltage (See Note 1) 2... - . . ee Emitter-Base Voltage . wo ee Continuous Collector Current See ee ee Peak Collector Current (See Note2) . 2... - ee ee Continuous Base Current . Continuous Device Dissipation at (or below) 100 Cc Case Temperature (See Note 3) woe Continuous Device Dissipation at (or below) 25 C Free- Air Temperature (See Note 4) Operating Collector Junction Temperature Range Storage Temperature Range . Terminal Temperature 1/16 Inch from Case for 10 Seconds NOTES: 1. These vatuet apply when the base-emitter diode is open-circuited. 2. This value applies for tw <, 0.3 ma, duty cycle < 10%. 3. Derate linearly to 200C case temperature at the rate of 0.8 w/c. 4, 130V 160V 130V 160V 120V 150V 120V 150V 6V 6V 6V 6Vv + 12 A - + -__ 25 A - 6A sow sow s80W 80W 4w 4W 35W 35W <- 65C to 200C _ < -65C to 200C -_ 300C ____> Derate ijinearly to 200C free-air temperature at the rate of 22.8 mW/C for TIP515 and TIP516, 20 mW/C for TIP517 and TIPS18. TEXAS INSTRUMENTS 2-245 TYPES TIP515 THRU TIP518 N-P-N SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) TIPS15 TIPS16 PARAMETER TEST CONDITIONS TIP517 TIPS18 = JUNIT MIN MAX{MIN MAX ViBR)CEOQ Collector-Emitter Breakdown Voltage Ic =30mA, Igp=9, See Note 5 120 150 Vv IcEO Collector Cutoff Current Voce = 60V. Ip 0 : mA Vce=75V, Igp=o 1 Voce = 120V, Vee = 0 5 Ices Collector Cutoff Current Voce = 180, VBE = 0 = . mA VcE=60V, Vee =0, Te = 150C 5 VceE=75V, Vee =9, Tc = 150C 5 jEBO Emitter Cutoff Current Vea = 3. ce o2 o2 mA Vep=6V, Ic=0 2 . . VceE=4V, Ic =6A, See Notes5and6] 40 200|] 40 200 hee Static Forward Current Transfer Ratio Vce=4V, Ig = 124A, See Notes 5 and6| 30 30 VBE Base-Emitter Voltage Vce=4V, Ic= 124, See Notes 5 and 6 1.4 1.4) V VcE{sat) _ Collector-Emitter Saturation Voltage 7 = 3 = ie = oe = ne - = * = =: Vv hte Small-Signal Common-E mitter Vce=5V, Ice 1A, f= kHz 40 40 Forward Current Transfer Ratio Smatl-Signal Common-E mitter intel Forward Current Transfer Ratio Voe=8V. Ic= 1A. f= 10MHe ; ; NOTES: 5. These parameters must be measured using pulse techniques. ty, = 300 us, duty cycle < 2%. 6. These parameters are measured with valtage-sensing contacts separate from the current-carrying contacts and located within 0.125 inch, from the device body. thermal characteristics TIP515 TIP517 PARAMETER TIP516 TIP518 | UNIT MAX MAX Resc Junction-to-Case Thermal Resistance 1.25 1.25 ow Resa Junction-to-Free-Air Thermal Resistance 43.75 50 2-246 TEXAS INSTRUMENTS TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIN IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBL